Results 11 to 20 of about 811,254 (262)

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions [PDF]

Micromachines
GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate ...
Xinxiang Zhang, Yanrong Cao, Chuan Chen, Linshan Wu, Zhiheng Wang, Shuo Su, Weiwei Zhang, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +2 more sources

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits [PDF]

Sensors, 2020
It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time ...
Md Arifur R. Sarker, Seungwoo Jung, Adrian Ildefonso, Ani Khachatrian, Stephen P. Buchner, Dale McMorrow, Pauline Paki, John D. Cressler, Ickhyun Song   +8 more
doaj   +2 more sources

Bootstrapped Driver and the Single-Event-Upset Effect [PDF]

IEEE Transactions on Circuits and Systems I: Regular Papers, 2020
As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-daloo, Mohamed A. Abufalgha, Alex Yakovlev, Basel Halak   +3 more
openaire   +2 more sources

Effect of Temperature on Single Event Latchup Sensitivity [PDF]

2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020
Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SEL has been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping ...
S. Guagliardo, Frederic Wrobel, Ygor Q. Aguiar, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul   +7 more
openaire   +1 more source

Single-Event Effects in CMOS Image Sensors [PDF]

IEEE Transactions on Nuclear Science, 2013
In this paper, 3T active pixel sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and single-event effects (SEE) are studied. Devices were fully functional during exposure, no single-event latch-up (SEL) or single-event functional interrupt (SEFI) happened.
Lalucaa, Valerian, Goiffon, Vincent, Magnan, Pierre, Rolland, Guy, Petit, Sophie   +4 more
openaire   +4 more sources

NAIRAS Model Run‐On‐Request Service at CCMC

Space Weather, 2023
The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) version 3 model is available to the community through the Community Coordinated Modeling Center run‐on‐request (RoR) service.
C. J. Mertens, G. P. Gronoff, Y. Zheng, M. Petrenko, J. Buhler, D. Phoenix, E. Willis, I. Jun, J. Minow   +8 more
doaj   +1 more source

Custom Scrubbing for Robust Configuration Hardening in Xilinx FPGAs

Instruments, 2019
The usage of SRAM-based Field Programmable Gate Arrays on High Energy Physics detectors is mostly limited by the sensitivity of these devices to radiation-induced upsets in their configuration.
Raffaele Giordano, Dario Barbieri, Sabrina Perrella, Roberto Catalano   +3 more
doaj   +1 more source

Hardness assurance levels and requirements for single event effects testing of integrated circuits

Безопасность информационных технологий, 2020
The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment.
Alexander I. Chumakov, Armen V. Sogoyan, Anatoly A. Smolin, Alexey O. Ahmetov, Dmitry V. Bobrovsky, Dmitry V. Boychenko, Nikolai V. Ryasnoy, Konstantin A. Chumakov, Evgeny V. Churilin, Vladimir F. Gerasimov, Vitaly V. Khaustov, Alexander A. Sashov, Anastasia V. Ulanova, Andrey V. Yanenko   +13 more
doaj   +1 more source

Single Event Effects Rate Calculation with Different Models

Безопасность информационных технологий, 2017
The paper presents SEE rate calculation using different models. It is shown the most conservative estimate for rate prediction is thin layer model. A new approach to set IC’s SEE requirements is suggested.
A I Chumakov, V M Uzhegov, A O Akhmetov, D V Boychenko, A V Yanenko, N V Ryasnoy   +5 more
doaj   +1 more source

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]

Journal of Astronomy and Space Sciences, 2016
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park, Jang-Soo Chae, Chol Lee, Jungsu Lee, Im Hyu Shin, Ji Eun Kim   +5 more
doaj   +1 more source