Results 21 to 30 of about 807,584 (214)

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

Micromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node

Applied Sciences, 2022
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash, Zongru Li, Chen Jin, Li Chen, Jiesi Xing, Zhiwu Yang, Shuting Shi   +6 more
doaj   +1 more source

NAIRAS Model Run‐On‐Request Service at CCMC

Space Weather, 2023
The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) version 3 model is available to the community through the Community Coordinated Modeling Center run‐on‐request (RoR) service.
C. J. Mertens, G. P. Gronoff, Y. Zheng, M. Petrenko, J. Buhler, D. Phoenix, E. Willis, I. Jun, J. Minow   +8 more
doaj   +1 more source

Custom Scrubbing for Robust Configuration Hardening in Xilinx FPGAs

Instruments, 2019
The usage of SRAM-based Field Programmable Gate Arrays on High Energy Physics detectors is mostly limited by the sensitivity of these devices to radiation-induced upsets in their configuration.
Raffaele Giordano, Dario Barbieri, Sabrina Perrella, Roberto Catalano   +3 more
doaj   +1 more source

Hardness assurance levels and requirements for single event effects testing of integrated circuits

Безопасность информационных технологий, 2020
The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment.
Alexander I. Chumakov, Armen V. Sogoyan, Anatoly A. Smolin, Alexey O. Ahmetov, Dmitry V. Bobrovsky, Dmitry V. Boychenko, Nikolai V. Ryasnoy, Konstantin A. Chumakov, Evgeny V. Churilin, Vladimir F. Gerasimov, Vitaly V. Khaustov, Alexander A. Sashov, Anastasia V. Ulanova, Andrey V. Yanenko   +13 more
doaj   +1 more source

Experimental Comparison of the Single-Event Effects of Single-Photon and Two-Photon Absorption under a Pulsed Laser

Applied Sciences, 2022
The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An, Detian Li, Xuan Wen, Shengsheng Yang, Chenguang Zhang, Jun Wang, Zhou Cao   +6 more
doaj   +1 more source

Single Event Effects Rate Calculation with Different Models

Безопасность информационных технологий, 2017
The paper presents SEE rate calculation using different models. It is shown the most conservative estimate for rate prediction is thin layer model. A new approach to set IC’s SEE requirements is suggested.
A I Chumakov, V M Uzhegov, A O Akhmetov, D V Boychenko, A V Yanenko, N V Ryasnoy   +5 more
doaj   +1 more source

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]

Journal of Astronomy and Space Sciences, 2016
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park, Jang-Soo Chae, Chol Lee, Jungsu Lee, Im Hyu Shin, Ji Eun Kim   +5 more
doaj   +1 more source

Towards an Accurate Probabilistic Modeling and Statistical Analysis of Temporal Faults via Temporal Dynamic Fault-Trees (TDFTs)

IEEE Access, 2019
Fault tree (FT) is a standardized notation for representing relationships between a system's reliability and the faults and/or the events associated with it.
Marwan Ammar, Ghaith Bany Hamad, Otmane Ait Mohamed, Yvon Savaria   +3 more
doaj   +1 more source

RAMSEES: A Model of the Atmospheric Radiative Environment Based on Geant4 Simulation of Extensive Air Shower

Aerospace, 2023
The device downscaling of electronic components has given rise to the need to consider specific failures in onboard airplane electronics. Single Event Effects (SEE) are a kind of failures that occur due to radiation in the atmosphere.
Hugo Cintas, Frédéric Wrobel, Marine Ruffenach, Damien Herrera, Frédéric Saigné, Athina Varotsou, Françoise Bezerra, Julien Mekki   +7 more
doaj   +1 more source