Results 11 to 20 of about 18,085,785 (304)

Single-Event Effects in CMOS Image Sensors [PDF]

IEEE Transactions on Nuclear Science, 2013
In this paper, 3T active pixel sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and single-event effects (SEE) are studied. Devices were fully functional during exposure, no single-event latch-up (SEL) or single-event functional interrupt (SEFI) happened.
Lalucaa, Valerian, Goiffon, Vincent, Magnan, Pierre, Rolland, Guy, Petit, Sophie   +4 more
openaire   +6 more sources

Experimental Comparison of the Single-Event Effects of Single-Photon and Two-Photon Absorption under a Pulsed Laser

Applied Sciences, 2022
The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An, Detian Li, Xuan Wen, Shengsheng Yang, Chenguang Zhang, Jun Wang, Zhou Cao   +6 more
doaj   +2 more sources

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions [PDF]

Micromachines
GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate ...
Xinxiang Zhang, Yanrong Cao, Chuan Chen, Linshan Wu, Zhiheng Wang, Shuo Su, Weiwei Zhang, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +2 more sources

Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature [PDF]

Sensors, 2018
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola, Ahmad Al Youssef, Samuel Ducret, Franck Perrier, Raphael Buiron, Olivier Gilard, Julien Mekki, Mathieu Boutillier, Guillaume Hubert, Christian Poivrey   +9 more
doaj   +2 more sources

Hardness assurance levels and requirements for single event effects testing of integrated circuits

Безопасность информационных технологий, 2020
The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment.
Alexander I. Chumakov, Armen V. Sogoyan, Anatoly A. Smolin, Alexey O. Ahmetov, Dmitry V. Bobrovsky, Dmitry V. Boychenko, Nikolai V. Ryasnoy, Konstantin A. Chumakov, Evgeny V. Churilin, Vladimir F. Gerasimov, Vitaly V. Khaustov, Alexander A. Sashov, Anastasia V. Ulanova, Andrey V. Yanenko   +13 more
doaj   +1 more source

Custom Scrubbing for Robust Configuration Hardening in Xilinx FPGAs

Instruments, 2019
The usage of SRAM-based Field Programmable Gate Arrays on High Energy Physics detectors is mostly limited by the sensitivity of these devices to radiation-induced upsets in their configuration.
Raffaele Giordano, Dario Barbieri, Sabrina Perrella, Roberto Catalano   +3 more
doaj   +1 more source

Recent progress and development trend of femtosecond pulsed-laser for single event effects assessment

He jishu, 2021
The current status and technical development trend of single event effect (SEE) induced by two-photon absorption (TPA) of femtosecond pulsed laser at home and abroad are reviewed.
AN Heng, LI Detian, YANG Shengsheng, WANG Yi, CAO Zhou, WEN Xuan, WANG Jun, ZHANG Chenguang, YIN Hong   +8 more
doaj   +1 more source

Single-Event Upset Analysis and Protection in High Speed Circuits [PDF]

, 2006
The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at
Lofti-Kamran, P., Di Natale, Giorgio, Hosseinabady M., Benso, Alfredo, Lofti Kamran P., Prinetto, Paolo Ernesto, Hosseinabady, M., Di Carlo, Stefano, A. Benso, M. Hosseinabady, P. Lotfi-Kamran, P. Prinetto, G. Di Natale, S. Di Carlo   +13 more
core   +1 more source

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]

Journal of Astronomy and Space Sciences, 2016
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park, Jang-Soo Chae, Chol Lee, Jungsu Lee, Im Hyu Shin, Ji Eun Kim   +5 more
doaj   +1 more source

Single Event Effects Rate Calculation with Different Models

Безопасность информационных технологий, 2017
The paper presents SEE rate calculation using different models. It is shown the most conservative estimate for rate prediction is thin layer model. A new approach to set IC’s SEE requirements is suggested.
A I Chumakov, V M Uzhegov, A O Akhmetov, D V Boychenko, A V Yanenko, N V Ryasnoy   +5 more
doaj   +1 more source