Results 11 to 20 of about 807,634 (264)
Investigation and feasibility study of using components with different categories from the perspective of radiation damage in LEO and GEO orbits [PDF]
فصلنامه علوم و فناوری فضایی, 2021 Space radiation can affect the performance and reliability of components in space systems. This paper focuses on the investigation of three types of radiation damage including ionizing dose, displacement damage, and single event damage using OMERE ...
Hamideh Daneshvar +4 more
doaj +1 more source
He jishu, 2023 BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming +9 more
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Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node
Applied Sciences, 2022 Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash +6 more
doaj +1 more source
Triple Modular Redundancy verification via heuristic netlist analysis [PDF]
PeerJ Computer Science, 2015 Triple Modular Redundancy (TMR) is a common technique to protect memory elements for digital processing systems subject to radiation effects (such as in space, high-altitude, or near nuclear sources). This paper presents an approach to verify the correct
Giovanni Beltrame
doaj +2 more sources
Single event effects qualificatoin of integrated circuits
Безопасность информационных технологий, 2020 The goal of qualification or monitoring of electronic device radiation testings is to ensure that devices meet the set of requirements. In some cases, this can be achieved without full characterization of radiation behavior, which leads to significant ...
Armen V. Sogoyan +2 more
doaj +1 more source
Effect of Temperature on Single Event Latchup Sensitivity [PDF]
2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020 Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SEL has been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping ...
S. Guagliardo +7 more
openaire +1 more source
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
Micromachines, 2023 A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang +11 more
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He jishu, 2021 The current status and technical development trend of single event effect (SEE) induced by two-photon absorption (TPA) of femtosecond pulsed laser at home and abroad are reviewed.
AN Heng +8 more
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NAIRAS Model Run‐On‐Request Service at CCMC
Space Weather, 2023 The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) version 3 model is available to the community through the Community Coordinated Modeling Center run‐on‐request (RoR) service.
C. J. Mertens +8 more
doaj +1 more source
Single-Event Effects in CMOS Image Sensors [PDF]
IEEE Transactions on Nuclear Science, 2013 In this paper, 3T active pixel sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and single-event effects (SEE) are studied. Devices were fully functional during exposure, no single-event latch-up (SEL) or single-event functional interrupt (SEFI) happened.
Lalucaa, Valerian +4 more
openaire +4 more sources