Results 11 to 20 of about 2,968,943 (344)

Efficient error rate estimation for single event effects considering statistical uncertainty

open access: goldNihon Kikai Gakkai ronbunshu, 2019
This study proposes the efficient error rate estimation method for Single Event Effects (SEE) considering statistical uncertainty. SEE is known to make significant damage to a semiconductor device used for a spacecraft on orbit by exposed to cosmic rays ...
Kisumi IIDA, Nozomu KOGISO
doaj   +3 more sources

Investigation and feasibility study of using components with different categories from the perspective of radiation damage in LEO and GEO orbits [PDF]

open access: yesفصلنامه علوم و فناوری فضایی, 2021
Space radiation can affect the performance and reliability of components in space systems. This paper focuses on the investigation of three types of radiation damage including ionizing dose, displacement damage, and single event damage using OMERE ...
Hamideh Daneshvar   +4 more
doaj   +1 more source

Accelerator simulation test technology and its application for single event effect evaluation in space

open access: yesHe jishu, 2023
BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming   +9 more
doaj   +1 more source

Bootstrapped Driver and the Single-Event-Upset Effect [PDF]

open access: yesIEEE Transactions on Circuits and Systems I: Regular Papers, 2020
As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-daloo   +3 more
openaire   +2 more sources

Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node

open access: yesApplied Sciences, 2022
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash   +6 more
doaj   +1 more source

Triple Modular Redundancy verification via heuristic netlist analysis [PDF]

open access: yesPeerJ Computer Science, 2015
Triple Modular Redundancy (TMR) is a common technique to protect memory elements for digital processing systems subject to radiation effects (such as in space, high-altitude, or near nuclear sources). This paper presents an approach to verify the correct
Giovanni Beltrame
doaj   +2 more sources

Effect of Temperature on Single Event Latchup Sensitivity [PDF]

open access: yes2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020
Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SEL has been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping ...
S. Guagliardo   +7 more
openaire   +1 more source

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

open access: yesMicromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang   +11 more
doaj   +1 more source

Recent progress and development trend of femtosecond pulsed-laser for single event effects assessment

open access: yesHe jishu, 2021
The current status and technical development trend of single event effect (SEE) induced by two-photon absorption (TPA) of femtosecond pulsed laser at home and abroad are reviewed.
AN Heng   +8 more
doaj   +1 more source

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