Results 11 to 20 of about 811,175 (264)
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
Micromachines, 2023 A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang +11 more
doaj +1 more source
Effect of Temperature on Single Event Latchup Sensitivity [PDF]
2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020 Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SEL has been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping ...
S. Guagliardo +7 more
openaire +1 more source
NAIRAS Model Run‐On‐Request Service at CCMC
Space Weather, 2023 The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) version 3 model is available to the community through the Community Coordinated Modeling Center run‐on‐request (RoR) service.
C. J. Mertens +8 more
doaj +1 more source
Aerospace, 2023 The device downscaling of electronic components has given rise to the need to consider specific failures in onboard airplane electronics. Single Event Effects (SEE) are a kind of failures that occur due to radiation in the atmosphere.
Hugo Cintas +7 more
doaj +1 more source
Single-Event Effects in CMOS Image Sensors [PDF]
IEEE Transactions on Nuclear Science, 2013 In this paper, 3T active pixel sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and single-event effects (SEE) are studied. Devices were fully functional during exposure, no single-event latch-up (SEL) or single-event functional interrupt (SEFI) happened.
Lalucaa, Valerian +4 more
openaire +4 more sources
Hardness assurance levels and requirements for single event effects testing of integrated circuits
Безопасность информационных технологий, 2020 The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment.
Alexander I. Chumakov +13 more
doaj +1 more source
Custom Scrubbing for Robust Configuration Hardening in Xilinx FPGAs
Instruments, 2019 The usage of SRAM-based Field Programmable Gate Arrays on High Energy Physics detectors is mostly limited by the sensitivity of these devices to radiation-induced upsets in their configuration.
Raffaele Giordano +3 more
doaj +1 more source
He jishu, 2021 The current status and technical development trend of single event effect (SEE) induced by two-photon absorption (TPA) of femtosecond pulsed laser at home and abroad are reviewed.
AN Heng +8 more
doaj +1 more source
Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]
Journal of Astronomy and Space Sciences, 2016 We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park +5 more
doaj +1 more source
Single Event Effects Rate Calculation with Different Models
Безопасность информационных технологий, 2017 The paper presents SEE rate calculation using different models. It is shown the most conservative estimate for rate prediction is thin layer model. A new approach to set IC’s SEE requirements is suggested.
A I Chumakov +5 more
doaj +1 more source