Results 11 to 20 of about 852,844 (264)

A Fast Simulation Method for Evaluating the Single-Event Effect in Aerospace Integrated Circuits [PDF]

Micromachines, 2023
With the continuous progress in integrated circuit technology, single-event effect (SEE) has become a key factor affecting the reliability of aerospace integrated circuits.
Xiaorui Zhang, Yi Liu, Changqing Xu, Xinfang Liao, Dongdong Chen, Yintang Yang   +5 more
doaj   +2 more sources

Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors [PDF]

Micromachines, 2021
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption.
Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Haiwu Xie   +4 more
doaj   +2 more sources

Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors [PDF]

Micromachines
In this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bismuth
Mengtian Bao, Ying Wang, Jianqun Yang, Xingji Li   +3 more
doaj   +2 more sources

Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data [PDF]

Micromachines
For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation ...
Mengtian Bao, Ying Wang, Jianqun Yang, Xingji Li   +3 more
doaj   +2 more sources

Bootstrapped Driver and the Single-Event-Upset Effect [PDF]

IEEE Transactions on Circuits and Systems I: Regular Papers, 2020
As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-daloo, Mohamed A. Abufalgha, Alex Yakovlev, Basel Halak   +3 more
openaire   +2 more sources

Experimental Comparison of the Single-Event Effects of Single-Photon and Two-Photon Absorption under a Pulsed Laser

Applied Sciences, 2022
The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An, Detian Li, Xuan Wen, Shengsheng Yang, Chenguang Zhang, Jun Wang, Zhou Cao   +6 more
doaj   +1 more source

A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications

Micromachines, 2023
The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE).
Ruxue Yao, Hongliang Lv, Yuming Zhang, Xu Chen, Yutao Zhang, Xingming Liu, Geng Bai   +6 more
doaj   +1 more source

Single event effects in carbon nanotube electronics

Nano Research
Recent studies on carbon nanotube (CNT) field-effect transistors (FETs) and integrated circuits (ICs) have shown their potential in radiation tolerance.
Ruhai Liu, Yifu Sun, Rui Chen, Lingyu Zhang, Qian Chen, Can Yang, Huiping Zhu, Peng Lu, Zhiyong Zhang, Maguang Zhu   +9 more
doaj   +2 more sources

Effect of Temperature on Single Event Latchup Sensitivity [PDF]

2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020
Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SEL has been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping ...
S. Guagliardo, Frederic Wrobel, Ygor Q. Aguiar, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul   +7 more
openaire   +1 more source

Development and application of a radiation effect evaluation method of aerospace integrated circuits for radiation hardened by design

He jishu, 2023
Aerospace integrated circuits represent core components of space electronic systems, and anti-radiation hardening is a key technology to ensure the reliable operation of aerospace integrated circuits in the space domain.
ZHENG Hongchao, WANG Liang, LI Zhe, GUO Gang, ZHAO Yuanfu   +4 more
doaj   +1 more source