Results 21 to 30 of about 17,695,032 (262)

Lineal Energy of Proton in Silicon by a Microdosimetry Simulation

Applied Sciences, 2021
Single event upset, or Single Event Effect (SEE) is increasingly important as semiconductor devices are entering into nano-meter scale. The Linear Energy Transfer (LET) concept is commonly used to estimate the rate of SEE.
Yueh Chiang, Cher Ming Tan, Chuan-Jong Tung, Chung-Chi Lee, Tsi-Chian Chao   +4 more
doaj   +1 more source

Propagazione di single-event transients in logiche combinatorie [PDF]

, 2022
Lo scopo di questa trattazione è quello di studiare la propagazione dei SET (Single-Event Transients) in catene di inverter implementate a partire da porte logiche di tipo NOT NOR e NAND, tramite l’ausilio di un simulatore tridimensionale.
Bevilacqua, Andrea
core  

Impact of JFET Region Width on Single Event Effects of SiC MOSFETs

Yuanzineng kexue jishu, 2023
The advantages of SiC MOSFETs (metal-oxide semiconductor field effect transistor) make this technology attractive for space, avionics and high-energy accelerator applications.
XU Mingkang1;JIA Yunpeng1,*;ZHOU Xintian1;HU Dongqing1;WU Yu1;TANG Yun1;LI Rongjia1;ZHAO Yuanfu1,2;WANG Liang2
doaj   +1 more source

Experimental Setups for Single Event Effect Studies [PDF]

, 2016
Experimental setups are being prepared to test and to qualify electronic devices regarding their tolerance to Single Event Effect (SEE). A multiple test setup and a new beam line developed especially for SEE studies at the São Paulo 8 UD Pelletron ...
S. G. Alberton, Aguiar, V. A. P., Added, N., Macchione, E. L. A., Alberton, S. G., Silveira, M. A. G., Aguirre, F., Medina, N. H., Benfica, J., Vargas, F., Porcher, B., MEDINA, NILBERTO H., VARGAS, FABIAN, Fernando Aguirre, Fabian Luis Vargas, AGUIRRE, F. R., SILVEIRA, M. A. G.; Guazzelli, Marcilei A., Marcilei Aparecida Guazzelli da Silva, Nemitala Added, Eduardo L. A. Macchione, Alberton, S.G., Vitor Ângelo Paulino de Aguiar, Bruno Casagrande Porcher, AGUIAR, VITOR A. P.   +23 more
core   +1 more source

The Analysis on Space Radiation Environment and Effect of the KOMPSAT-2 Spacecraft(II): Single Event Effect [PDF]

Journal of Astronomy and Space Sciences, 2001
In this paper, space radiation environment and single event effect(SEE) have been analyzed for the KOMPSAT-2 operational orbit. As spacecraft external and internal space environment, trapped proton, SEP(solar energetic particle) and GCR(galactic cosmic ...
Myung-Jin Baek, Day-Young Kim, Hak-Jung Kim   +2 more
doaj  

System-on-chip single event effect hardening design and validation using proton irradiation

Nuclear Engineering and Technology, 2023
A multi-layer design is applied to mitigate single event effect (SEE) in a 28 nm System-on-Chip (SoC). It depends on asymmetric multiprocessing (AMP), redundancy and system watchdog.
Weitao Yang, Yang Li, Gang Guo, Chaohui He, Longsheng Wu   +4 more
doaj   +1 more source

Single-event effect testing of the PNI RM3100 magnetometer for space applications [PDF]

Geoscientific Instrumentation, Methods and Data Systems, 2022
The results of a destructive single-event effect susceptibility radiation test of the PNI RM3100 magnetometer sensor, specifically the MagI2C ASIC (application-specific integrated circuit) on the sensor board are presented.
M. B. Moldwin, E. Wilcox, E. Zesta, T. M. Bonalsky   +3 more
doaj   +1 more source

Current Single Event Effect Test Results for Candidate Spacecraft Electronics [PDF]

, 1997
We present both proton and heavy ion single event effect (SEE) ground test results for candidate spacecraft electronics.
Tull E G Stassinopoulos, Amy K Moran, Donald K Hawkins, Paul Marshall, James Kinnison, Bliss Carkhuff, James E Forney, Jackson, Hak S Kim, Christina M Seidleck, Kenneth A Label, Anthony B Sanders   +11 more
core   +1 more source

Incidents and Accidents: The Way of the Single Event Tester [PDF]

, 2017
When performing a single event effect (SEE) test during a test campaign, flexibility and out of the box thinking is often required for unexpected and unplanned ...
Kenneth A. LaBel, LaBel, Kenneth A.
core   +1 more source

Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET

Yuanzineng kexue jishu
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj   +1 more source