Results 21 to 30 of about 13,102,541 (237)

Single Event Tolerance of X-ray SOI Pixel Sensors [PDF]

open access: yes, 2022
We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE.
Uchida, Hiroyuki   +21 more
core   +1 more source

Evaluation of a method to calculate debris-flow volume based on observations of flow depth [PDF]

open access: yesE3S Web of Conferences, 2023
The volume of a debris flow is a critical parameter in hazard analysis, yet accurate estimates of volume are often unavailable due to mixing with larger rivers at the downstream end of alluvial fans. We describe a method to calculate the volume of debris
McArdell Brian W.   +3 more
doaj   +1 more source

Inferring astrophysical neutrino sources from the Glashow resonance

open access: yesJournal of High Energy Physics, 2023
We infer the ultrahigh energy neutrino source by using the Glashow resonance candidate event recently identified by the IceCube Observatory. For the calculation of the cross section for the Glashow resonance, we incorporate both the atomic Doppler ...
Guo-yuan Huang   +2 more
doaj   +1 more source

Single inclusive jet production and the nuclear modification ratio at very forward rapidity in proton-lead collisions with sNN=5.02 TeV

open access: yesPhysics Letters B, 2018
We present calculations of single inclusive jet transverse momentum and energy spectra at forward rapidity (5 ...
Marcin Bury   +5 more
doaj   +1 more source

Cross section dependence of event rates at neutrino telescopes [PDF]

open access: yes, 2006
We examine the dependence of event rates at neutrino telescopes on the neutrino-nucleon cross section for neutrinos with energy above 1 PeV, and contrast the results with those for cosmic ray experiments.
Marfatia, Danny   +3 more
core   +1 more source

Impact of recombination on heavy ion induced single event upset cross-section

open access: yesIOP Conference Series: Materials Science and Engineering, 2016
The experimental dependence of the single event upset (SEU) cross-section versus linear energy transfer (LET) function in the nanoscale (with feature size less than 100 nm) memories is explained with the proposed recombination-limited charge yield, which is significantly dependent on LET.
K S Zemtsov   +3 more
openaire   +1 more source

Search for s-channel single top-quark production in proton–proton collisions at s=8 TeV with the ATLAS detector

open access: yesPhysics Letters B, 2015
This Letter presents a search at the LHC for s-channel single top-quark production in proton–proton collisions at a centre-of-mass energy of 8 TeV. The analyzed data set was recorded by the ATLAS detector and corresponds to an integrated luminosity of 20.
G. Aad   +2888 more
doaj   +1 more source

Search for WH production with a light Higgs boson decaying to prompt electron-jets in proton–proton collisions at $\sqrt {s}=7$ TeV with the ATLAS detector [PDF]

open access: yes, 2013
A search is performed for WH production with a light Higgs boson decaying to hidden-sector particles resulting in clusters of collimated electrons, known as electron-jets.

core   +2 more sources

Prediction of low-LET ion induced single event upset cross sections for advanced SRAM [PDF]

open access: yesJournal of Nuclear Science and Technology, 2013
This paper describes a simple circuit-level simulation-based approach to predict single event upset cross section induced by low-linear energy transfer (LET) ions for advanced bulk static random access memory (SRAM). A basic Simulation Program with Integrated Circuit Emphasis (SPICE) model with effective collection depth considered is developed for ...
Wanting Zhou, Jianhao Hu, Lei Li
openaire   +1 more source

Simulation of 50-500 MeV Quasi-monoenergetic Neutron Source for Single Event Effect Irradiation Experiment

open access: yesYuanzineng kexue jishu, 2023
The neutron-induced single event effect affects the reliability of electronic devices used in aircraft and ground nuclear facilities. With the progress of semiconductor technology, device feature sizes become smaller and more integrated, radiation ...
CHEN Qiming;GUO Gang;HAN Jinhua;ZHAO Shuyong;MA Xu;ZHANG Zheng;LIU Jiancheng
doaj  

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