Results 1 to 10 of about 117,391 (253)

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking

IEEE Access, 2019
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive nodes of
Jizuo Zhang, Liang Fang, Jianjun Chen, Shen Hou, Xianyu Tong   +4 more
doaj   +1 more source

Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions

Aerospace, 2020
Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event Upset (SEU) effects.
Ygor Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul   +6 more
doaj   +1 more source

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

IEEE Access, 2022
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya, Kalyan Koley, Jitendra Kumar, Pankaj Kumar   +3 more
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Synergistic effect of total ionization dose and single event transient in bipolar operational amplifier LM158

He jishu, 2021
BackgroundBipolar devices used in space radiation environment for a long time are simultaneously threatened by the total ionization dose (TID) effect and single event transient (SET), and there is a synergistic effect between TID and SET.
CAI Jiao, YAO Shuai, LU Wu, YU Xin, WANG Xin, LI Xiaolong, LIU Mohan, SUN Jing, GUO Qi   +8 more
doaj   +1 more source

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Sensors, 2020
This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event ...
Linjie Fan, Jinshun Bi, Kai Xi, Gangping Yan   +3 more
doaj   +1 more source

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

Micromachines, 2023
The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional ...
Tao Liu, Yuan Wang, Rongyao Ma, Hao Wu, Jingyu Tao, Yiren Yu, Zijun Cheng, Shengdong Hu   +7 more
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Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature

Sensors, 2018
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola, Ahmad Al Youssef, Samuel Ducret, Franck Perrier, Raphael Buiron, Olivier Gilard, Julien Mekki, Mathieu Boutillier, Guillaume Hubert, Christian Poivrey   +9 more
doaj   +1 more source

28nm Fault-Tolerant Hardening-by-Design Frequency Divider for Reducing Soft Errors in Clock and Data Recovery

IEEE Access, 2019
A fault-tolerant hardening-by-design frequency divider has been proposed for clock and data recovery in a 28-nm CMOS process. By means of the mandatory updating mechanism, the proposed divider can update the state of the D flip-flops from an error state ...
Hengzhou Yuan, Yang Guo, Jianjun Chen, Yaqing Chi, Xi Chen, Bin Liang   +5 more
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SET Pulse Characterization and SER Estimation in Combinational Logic with Placement and Multiple Transient Faults Considerations

Technologies, 2020
Integrated circuit susceptibility to radiation-induced faults remains a major reliability concern. The continuous downscaling of device feature size and the reduction in supply voltage in CMOS technology tend to worsen the problem.
Georgios Ioannis Paliaroutis, Pelopidas Tsoumanis, Nestor Evmorfopoulos, George Dimitriou, Georgios I. Stamoulis   +4 more
doaj   +1 more source

Synergistic effect of total ionizing dose and single-event upset in the analog/digital converter AD574

Fushe yanjiu yu fushe gongyi xuebao, 2021
This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng, YAO Shuai, YU Xin, LI Xiaolong, LU Wu, WANG Xin, LIU Mohan, SUN Jing, GUO Qi, CAI Jiao, YANG Sheng   +10 more
doaj   +1 more source