Results 31 to 40 of about 12,854,075 (243)
Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET
As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely.
Yibo Wang +4 more
core +1 more source
Pulse-Length Determination Techniques in the Rectangular Single Event Transient Fault Model [PDF]
ISBN : 978-1-4799-0102-9International audienceOne of the well-known models to represent Single Event Transient phenomenon at the logic-level is the rectangular pulse model.
Kerkhoff, Hans G. +10 more
core +1 more source
A Static Analysis for the Minimization of Voters in Fault-Tolerant Circuits [PDF]
We present a formal approach to minimize the number of voters in triple-modular redundant (TMR) sequential circuits. Our technique actually works on a single copy of the TMR circuit and considers a large class of fault mo dels of the form “at most 1 ...
Burlyaev, Dmitry +2 more
doaj +1 more source
ABSTRACT Background Young adult childhood cancer survivors (YA‐CCS) have an increased risk of treatment‐related health complications throughout their lives. Lifelong survivorship care is recommended, yet many YA‐CCS experience disruptions in care during pediatric‐to‐adult transitions and do not receive recommended survivorship care.
Kevin Shanchen Pu +8 more
wiley +1 more source
Optimized Simulation Analysis for Single Event Transient in Nanoscale Logical Cells
Single event transient (SET) induced by high energy single particle radiation is the main threat to space application electronic system reliability.
WANG Tan, DING Lili, LUO Yinhong, ZHAO Wen, ZHANG Fengqi, XU Jingyan
doaj +1 more source
ABSTRACT Pediatric refractory immune thrombocytopenia (rITP) is generally characterized by persistent thrombocytopenia and failure to achieve a sustained response to multiple standard therapies. We report a 4‐year‐old female with congenital tufting enteropathy, post‐intestinal transplant patient on immunosuppressants, who developed severe rITP ...
Sarah Hsieh +4 more
wiley +1 more source
Single-Event Transient in FinFETs and Nanosheet FETs
A single-event transient (SET) due to alpha particle strike is studied in 11- and 6-nm-bulk FinFETs and 6-nm-bulk nanosheet FET using 3-D TCAD simulation.
Han, Jin-Woo +3 more
core +1 more source
TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj +1 more source
Plasma membranes contain dynamic nanoscale domains that organize lipids and receptors. Because viruses operate at similar scales, this architecture shapes early infection steps, including attachment, receptor engagement, and entry. Using influenza A virus and HIV‐1 as examples, we highlight how receptor nanoclusters, multivalent glycan interactions ...
Jan Schlegel, Christian Sieben
wiley +1 more source
This letter presents a wide frequency tuning range (FTR), fault‐tolerant, and common‐mode‐noise (CMN)‐suppressed LC‐VCO using the Reversed‐varactor (RV) technique.
Qiancheng Guo, Yang Guo
doaj +1 more source

