Results 11 to 20 of about 12,854,075 (243)

Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS

Applied Sciences
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions.
Zhuoxiang Wang, Gang Li, Minghua Tang
doaj   +2 more sources

Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation

Micromachines
In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon ...
Yuedecai Long, Abuduwayiti Aierken, Xuefei Liu, Mingqiang Liu, Changsong Gao, Gang Wang, Degui Wang, Sandip Majumdar, Yundong Xuan, Mengxin Liu, Jinshun Bi   +10 more
doaj   +2 more sources

Investigation of proton single-event transient in CMOS image sensor

AIP Advances
With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention.
Zhigang Peng, Yanjun Fu, Yuan Wei, Yinghong Zuo, Shengli Niu, Jinhui Zhu, Yaxin Guo, Fang Liu, Pei Li, Chaohui He, Yonghong Li   +10 more
doaj   +2 more sources

Single-Event Upset Analysis and Protection in High Speed Circuits [PDF]

, 2006
The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at
Lofti-Kamran, P., Di Natale, Giorgio, Hosseinabady M., Benso, Alfredo, Lofti Kamran P., Prinetto, Paolo Ernesto, Hosseinabady, M., Di Carlo, Stefano, A. Benso, M. Hosseinabady, P. Lotfi-Kamran, P. Prinetto, G. Di Natale, S. Di Carlo   +13 more
core   +1 more source

Single Event Effects in CMOS Image Sensors [PDF]

, 2012
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI ...
Goiffon, Vincent, Lalucaa, Valerian, Rolland, Guy, Petit, Sophie, Magnan, Pierre   +4 more
core   +1 more source

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

Micromachines, 2023
A voltage-controlled oscillator (VCO) is one of the key modules of the phase-locked loop (PLL) microsystem, and it is easy to bombard using high-energy particles in a radiation environment, resulting in the single-event effect.
Qi Xiang, Hongxia Liu, Yulun Zhou
doaj   +1 more source

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking

IEEE Access, 2019
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive nodes of
Jizuo Zhang, Liang Fang, Jianjun Chen, Shen Hou, Xianyu Tong   +4 more
doaj   +1 more source

Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions

Aerospace, 2020
Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event Upset (SEU) effects.
Ygor Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul   +6 more
doaj   +1 more source

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

IEEE Access, 2022
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya, Kalyan Koley, Jitendra Kumar, Pankaj Kumar   +3 more
doaj   +1 more source

Synergistic effect of total ionization dose and single event transient in bipolar operational amplifier LM158

He jishu, 2021
BackgroundBipolar devices used in space radiation environment for a long time are simultaneously threatened by the total ionization dose (TID) effect and single event transient (SET), and there is a synergistic effect between TID and SET.
CAI Jiao, YAO Shuai, LU Wu, YU Xin, WANG Xin, LI Xiaolong, LIU Mohan, SUN Jing, GUO Qi   +8 more
doaj   +1 more source