Results 1 to 10 of about 213,131 (262)

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor [PDF]

Micromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +4 more sources

Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits [PDF]

Micromachines
The problem that the conventional double-exponential transient current model (DE model) can overdrive the circuit, which leads to the overestimation of the soft error rate of the logic cell, is solved.
Yujian Wang, Hongliang Lu, Caozhen Yang, Yutao Zhang, Ruxue Yao, Rui Dong, Yuming Zhang   +6 more
doaj   +2 more sources

Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation [PDF]

Micromachines
In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon ...
Yuedecai Long, Abuduwayiti Aierken, Xuefei Liu, Mingqiang Liu, Changsong Gao, Gang Wang, Degui Wang, Sandip Majumdar, Yundong Xuan, Mengxin Liu, Jinshun Bi   +10 more
doaj   +2 more sources

Experimental Investigation of Charge Sharing Induced SET Depending on Transistors in Abutted Rows in 65 nm Bulk CMOS Technology

IEEE Access, 2022
The effect of transistors in abutted rows on charge sharing is investigated by changing the configuration of the transistors in abutted rows in this work.
Xiaowei He, Daheng Yue, Pengcheng Huang, Zhenyu Zhao   +3 more
doaj   +1 more source

Experimental Comparison of the Single-Event Effects of Single-Photon and Two-Photon Absorption under a Pulsed Laser

Applied Sciences, 2022
The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An, Detian Li, Xuan Wen, Shengsheng Yang, Chenguang Zhang, Jun Wang, Zhou Cao   +6 more
doaj   +1 more source

Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit

IET Circuits, Devices and Systems, 2022
Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment.
Arumugam Karthigeyan, Sankararajan Radha, Esakkimuthu Manikandan   +2 more
doaj   +1 more source

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

IEEE Access, 2022
This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel.
Antonio Calomarde, Salvador Manich, Antonio Rubio, Francisco Gamiz   +3 more
doaj   +1 more source

TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature

IEEE Access, 2022
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj   +1 more source

Prediction of Single Event Effects in FinFET Devices Based on Deep Learning

IEEE Journal of the Electron Devices Society, 2023
The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications.
Haiyu Liu, Shulong Wang, Rong Zhao, Hao Ma, Lan Ma, Shijie Liu, Shupeng Chen, Hongxia Liu   +7 more
doaj   +1 more source

Active Radiation-Hardening Strategy in Bulk FinFETs

IEEE Access, 2020
In this article, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that ...
Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gamiz   +3 more
doaj   +1 more source