Results 1 to 10 of about 481 (118)

On-Chip Characterization of Single-Event Transient Pulsewidths [PDF]

IEEE Transactions on Device and Materials Reliability, 2006
A new on-chip single-event transient (SET) test structure has been developed to autonomously characterize the widths of random SET pulses. Simulation results show measurement granularity of 900 ps for a 1.5 mum technology and also indicate that the measurement granularity rapidly scales down with technology. Laser tests were used to demonstrate circuit
Ronald D. Schrimpf, Lloyd Massengill, William H. Robinson   +2 more
exaly   +2 more sources

Experimental Investigation of Charge Sharing Induced SET Depending on Transistors in Abutted Rows in 65 nm Bulk CMOS Technology

IEEE Access, 2022
The effect of transistors in abutted rows on charge sharing is investigated by changing the configuration of the transistors in abutted rows in this work.
Xiaowei He, Daheng Yue, Pengcheng Huang, Zhenyu Zhao   +3 more
doaj   +1 more source

Experimental Comparison of the Single-Event Effects of Single-Photon and Two-Photon Absorption under a Pulsed Laser

Applied Sciences, 2022
The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An, Detian Li, Xuan Wen, Shengsheng Yang, Chenguang Zhang, Jun Wang, Zhou Cao   +6 more
doaj   +1 more source

Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit

IET Circuits, Devices and Systems, 2022
Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment.
Arumugam Karthigeyan, Sankararajan Radha, Esakkimuthu Manikandan   +2 more
doaj   +1 more source

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

IEEE Access, 2022
This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel.
Antonio Calomarde, Salvador Manich, Antonio Rubio, Francisco Gamiz   +3 more
doaj   +1 more source

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

Micromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

Single Event Transient Fault Analysis of ELEPHANT cipher

CoRR, 2021
In this paper, we propose a novel fault attack termed as Single Event Transient Fault Analysis (SETFA) attack, which is well suited for hardware implementations. The proposed approach pinpoints hotspots in the cypher's Sbox combinational logic circuit that significantly reduce the key entropy when subjected to faults.
Priyanka Joshi, Bodhisatwa Mazumdar
openaire   +2 more sources

TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature

IEEE Access, 2022
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj   +1 more source

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

Micromachines, 2023
A voltage-controlled oscillator (VCO) is one of the key modules of the phase-locked loop (PLL) microsystem, and it is easy to bombard using high-energy particles in a radiation environment, resulting in the single-event effect.
Qi Xiang, Hongxia Liu, Yulun Zhou
doaj   +1 more source

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

Micromachines, 2023
In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail.
Yutao Zhang, Hongliang Lu, Chen Liu, Yuming Zhang, Ruxue Yao, Xingming Liu   +5 more
doaj   +1 more source