Results 1 to 10 of about 435 (116)

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

Micromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +3 more sources

On-Chip Characterization of Single-Event Transient Pulsewidths [PDF]

IEEE Transactions on Device and Materials Reliability, 2006
A new on-chip single-event transient (SET) test structure has been developed to autonomously characterize the widths of random SET pulses. Simulation results show measurement granularity of 900 ps for a 1.5 mum technology and also indicate that the measurement granularity rapidly scales down with technology. Laser tests were used to demonstrate circuit
Ronald Schrimpf, Lloyd Massengill, William H Robinson   +2 more
exaly   +2 more sources

Experimental Investigation of Charge Sharing Induced SET Depending on Transistors in Abutted Rows in 65 nm Bulk CMOS Technology

IEEE Access, 2022
The effect of transistors in abutted rows on charge sharing is investigated by changing the configuration of the transistors in abutted rows in this work.
Xiaowei He, Daheng Yue, Pengcheng Huang, Zhenyu Zhao   +3 more
doaj   +1 more source

Experimental Comparison of the Single-Event Effects of Single-Photon and Two-Photon Absorption under a Pulsed Laser

Applied Sciences, 2022
The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An, Detian Li, Xuan Wen, Shengsheng Yang, Chenguang Zhang, Jun Wang, Zhou Cao   +6 more
doaj   +1 more source

A single event transient detector in SRAM-based FPGAs

IEICE Electronics Express, 2017
Ni Tianming, Zhengfeng Huang, Huaguo Liang   +2 more
exaly   +3 more sources

Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit

IET Circuits, Devices and Systems, 2022
Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment.
Arumugam Karthigeyan, Sankararajan Radha, Esakkimuthu Manikandan   +2 more
doaj   +1 more source

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

IEEE Access, 2022
This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel.
Antonio Calomarde, Salvador Manich, Antonio Rubio, Francisco Gamiz   +3 more
doaj   +1 more source

Single Event Transient tolerant Count Min Sketches

Microelectronics Reliability, 2022
Frequency estimation is a common operation in big data processing. In many big data applications, computing the exact data frequency is not practical as it requires a large computational effort. Instead, a reasonably accurate estimate is commonly used.
Zhu, Jinhua, Jin, Jie, Gao, Zhen, Reviriego Vasallo, Pedro   +3 more
openaire   +2 more sources

TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature

IEEE Access, 2022
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj   +1 more source

Prediction of Single Event Effects in FinFET Devices Based on Deep Learning

IEEE Journal of the Electron Devices Society, 2023
The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications.
Haiyu Liu, Shulong Wang, Rong Zhao, Hao Ma, Lan Ma, Shijie Liu, Shupeng Chen, Hongxia Liu   +7 more
doaj   +1 more source