Results 1 to 10 of about 211,486 (163)
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor [PDF]
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang +11 more
doaj +4 more sources
Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation [PDF]
In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon ...
Yuedecai Long +10 more
doaj +2 more sources
Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits [PDF]
The problem that the conventional double-exponential transient current model (DE model) can overdrive the circuit, which leads to the overestimation of the soft error rate of the logic cell, is solved.
Yujian Wang +6 more
doaj +2 more sources
On-Chip Characterization of Single-Event Transient Pulsewidths [PDF]
A new on-chip single-event transient (SET) test structure has been developed to autonomously characterize the widths of random SET pulses. Simulation results show measurement granularity of 900 ps for a 1.5 mum technology and also indicate that the measurement granularity rapidly scales down with technology. Laser tests were used to demonstrate circuit
Balaji Narasimham +2 more
exaly +2 more sources
The effect of transistors in abutted rows on charge sharing is investigated by changing the configuration of the transistors in abutted rows in this work.
Xiaowei He +3 more
doaj +1 more source
The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An +6 more
doaj +1 more source
Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment.
Arumugam Karthigeyan +2 more
doaj +1 more source
This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel.
Antonio Calomarde +3 more
doaj +1 more source
A single event transient detector in SRAM-based FPGAs
Xiumin Xu +2 more
exaly +3 more sources
Single Event Transient tolerant Count Min Sketches
Frequency estimation is a common operation in big data processing. In many big data applications, computing the exact data frequency is not practical as it requires a large computational effort. Instead, a reasonably accurate estimate is commonly used.
Zhu, Jinhua +3 more
openaire +2 more sources

