Results 31 to 40 of about 8,018,858 (254)
Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET
As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely.
Yibo Wang +4 more
core +1 more source
A Methodology for Reconstructing DSET Pulses from Heavy-Ion Broad-Beam Measurements
A table-based method for the estimation of heavy-ion-induced Digital Single Event Transient (DSET) voltage pulse-width in a single logic cell has been developed.
Takahiro Makino +5 more
doaj +1 more source
Prediction of Single-Event Effects in FDSOI Devices Based on Deep Learning
Single-event effects (SEE) are an important index of radiation resistance for fully depleted silicon on insulator (FDSOI) devices. The research into traditional FDSOI devices is based on simulation software, which is time consuming, requires a large ...
Rong Zhao +7 more
doaj +1 more source
Ultrafast, Single-Event Ptychographic Imaging of Transient Electron Dynamics
Dynamic phenomena occurring on the ultrafast time scales are inherently difficult to image. While pump–probe techniques have been used for decades, probing nonrepeatable phenomena precludes this form of imaging.
Jonathan Barolak +6 more
doaj +1 more source
ABSTRACT Background Young adult childhood cancer survivors (YA‐CCS) have an increased risk of treatment‐related health complications throughout their lives. Lifelong survivorship care is recommended, yet many YA‐CCS experience disruptions in care during pediatric‐to‐adult transitions and do not receive recommended survivorship care.
Kevin Shanchen Pu +8 more
wiley +1 more source
Simulation of Single-event Irradiation Damage Effects on GaN-based LEDs
Light-emitting diodes (LEDs) as keydevices in the fields of space exploration and nuclear technology hold broad application prospects. However, in space applications, LEDs face challenges from the radiation environment, which poses a serious threat to ...
JIANG Rongyu1, WANG Zujun2, YANG Xin1, CHEN Minglei3, WANG Pensheng2
doaj +1 more source
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive nodes of
Jizuo Zhang +4 more
doaj +1 more source
ABSTRACT Pediatric refractory immune thrombocytopenia (rITP) is generally characterized by persistent thrombocytopenia and failure to achieve a sustained response to multiple standard therapies. We report a 4‐year‐old female with congenital tufting enteropathy, post‐intestinal transplant patient on immunosuppressants, who developed severe rITP ...
Sarah Hsieh +4 more
wiley +1 more source
Optimized Simulation Analysis for Single Event Transient in Nanoscale Logical Cells
Single event transient (SET) induced by high energy single particle radiation is the main threat to space application electronic system reliability.
WANG Tan, DING Lili, LUO Yinhong, ZHAO Wen, ZHANG Fengqi, XU Jingyan
doaj +1 more source
Plasma membranes contain dynamic nanoscale domains that organize lipids and receptors. Because viruses operate at similar scales, this architecture shapes early infection steps, including attachment, receptor engagement, and entry. Using influenza A virus and HIV‐1 as examples, we highlight how receptor nanoclusters, multivalent glycan interactions ...
Jan Schlegel, Christian Sieben
wiley +1 more source

