Results 51 to 60 of about 8,018,858 (254)

Investigation of proton single-event transient in CMOS image sensor

AIP Advances
With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention.
Zhigang Peng, Yanjun Fu, Yuan Wei, Yinghong Zuo, Shengli Niu, Jinhui Zhu, Yaxin Guo, Fang Liu, Pei Li, Chaohui He, Yonghong Li   +10 more
doaj   +1 more source

Particle swarm optimisation driven low cost single event transient fault secured design during architectural synthesis

The Journal of Engineering, 2017
Owing to aggressive shrinking in nanometre scale as well as faster devices, particle strike manifesting itself into transient fault spanning multiple cycle and multiple units will be the centre-focus of application specific datapath generated through ...
Anirban Sengupta, Deepak Kachave
doaj   +1 more source

Single Event Transient Tolerance Analysis in 8051 Microprocessor Using Scan Chain

, 2016
As semi-conductor manufacturing technology evolves; the single event transient problem becomes more significant issue. Single event transient has a critical impact on both combinational and sequential logic circuits, so it is important to evaluate the ...
Jong Kang Park, Jun Sung Go, Jong Tae Kim   +2 more
core   +1 more source

Ligand‐dependent transcriptional heterogeneity in cell cycle gene expression delays G1/S entry

FEBS Letters, EarlyView.
EGF and HRG induce distinct G1/S progression programs in ErbB2‐amplified BT474 breast cancer cells. Despite activating the potent ErbB2–ErbB3 heterodimer, HRG does not accelerate cell‐cycle entry. Instead, EGF promotes earlier restriction‐point passage via ERK–FOS signaling, whereas HRG activates the AKT–MYC axis, driving transcriptional heterogeneity ...
Ririn Rahmala Febri, Ayaka Nagasato‐Ichikawa, Keita Iida, Shuhei Kimura, Akira Imamoto, Mariko Okada   +5 more
wiley   +1 more source

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Micromachines
GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate ...
Xinxiang Zhang, Yanrong Cao, Chuan Chen, Linshan Wu, Zhiheng Wang, Shuo Su, Weiwei Zhang, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

Emerging experimental and computational methods for studying redox‐regulated structural transitions

FEBS Letters, EarlyView.
Redox reactions can reshape proteins and alter how they behave in cells, with important consequences for health and disease. This review explores emerging experimental and computational approaches for discovering these redox‐sensitive protein switches, revealing their structural effects, and predicting their behavior, opening new opportunities to ...
Tasneem Rass, Dana Reichmann, Gábor Erdős   +2 more
wiley   +1 more source

Analysis of SET Reconvergence and Hardening in the Combinational Circuit Using a SAT-Based Method

IEEE Access, 2018
The reconvergence-phenomenon is common in modern circuit design. It occurs when the signal reconvenes at a certain point through multiple sensitized paths. It affects the soft error estimation and hardening. It is complicated to analyze the reconvergence-
Chang Liu, Long Zhang, Xu He, Yang Guo
doaj   +1 more source

Synergistic perspectives—How single‐molecule biophysics complement biochemical understanding

FEBS Letters, EarlyView.
In this review, we discuss how ensemble biochemistry and single‐molecule approaches are complementary, outline commonly used single‐molecule techniques, and illustrate their relevance through two representative case studies: chromatin organization by SMC complexes and pathway choice during DNA double‐strand break repair.
Sara De Bragança, Eline L. Jansen, Jorine M. Eeftens   +2 more
wiley   +1 more source

Analysis of Single Event Transient in SOI GaN-Based FinFET Due to Heavy-Ion Irradiation

IEEE Access
GaN devices offer unrivaled efficiency, high-frequency performance, and superior radiation tolerance over traditional silicon technologies, making them well-suited for space applications.
P. S. Rajakumar, S. Satheesh Kumar
doaj   +1 more source

Characterization and modelling of single event transients in LDMOS-SOI FETs

Microelectronics Reliability, 2011
In this paper, we develop a model to simulate the single event transient (SET) phenomena in LDMOS-SOI devices. 3D simulations and compact model are coupled in order to reproduce the current pulse in LDMOS-SOI device generated by an ion strike through the different device locations, at various biases and temperatures.
Joaquín Alvarado, Valeria Kilchytska, El Hafed Boufouss, Denis Flandre   +3 more
openaire   +2 more sources