Results 1 to 10 of about 10,568 (195)

Study of single event upsets (SEUS) a survey and analysis [PDF]

open access: gold, 2021
Over the last few years evolution in electronics technology has led to the shrinkage of electronic circuits. While this has led to the emergence of more powerful computing systems it has also caused a dramatic increase in the occurrence of soft errors and a steady climb in failure in time (FIT) rates.
Sheldon Mark Foulds
  +5 more sources

A Novel Low-Power and Soft Error Recovery 10T SRAM Cell [PDF]

open access: yesMicromachines, 2023
In SRAM cells, as the size of transistors and the distance between transistors decrease rapidly, the critical charge of the sensitive node decreases, making SRAM cells more susceptible to soft errors.
Changjun Liu, Hongxia Liu, Jianye Yang
doaj   +2 more sources

Efficient Protection of FPGA Implemented LDPC Decoders Against Single Event Upsets (SEUs) on Configuration Memories [PDF]

open access: greenIEEE Transactions on Circuits and Systems I: Regular Papers, 2023
Low Density Parity Check (LDPC) codes are used in 5G systems for traffic channels due to their excellent error correction capability for long sequences, and the Min-Sum algorithm is widely applied in practical implementations of LDPC decoders due to its low complexity.
Zhen Gao 0005   +4 more
openaire   +3 more sources

Single-Event-Upset (SEU) Awareness in FPGA Routing

open access: hybrid2007 44th ACM/IEEE Design Automation Conference, 2007
The majority of configuration bits affecting a design are devoted to FPGA routing configuration. We present a SEU-aware routing algorithm that provides significant reduction in bridging faults caused by SEUs. Depending on the routing architecture switches, for MCNC benchmarks, the number of care bits can be reduced between 13% and 19% on average with ...
Shahin Golshan, Elaheh Bozorgzadeh
  +4 more sources

Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments [PDF]

open access: yesMicromachines
As semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur ...
Se-Yeon Park, Eun Gyo Jeong, Sung-Hun Jo
doaj   +2 more sources

Soft error mitigation and recovery of SRAM-based FPGAs using brain-inspired hybrid-grained scrubbing mechanism [PDF]

open access: yesFrontiers in Computational Neuroscience, 2023
Soft error has increasingly become a critical concern for SRAM-based field programmable gate arrays (FPGAs), which could corrupt the configuration memory that stores configuration data describing the custom-designed circuit architecture. To mitigate this
Yu Xie   +3 more
doaj   +2 more sources

Laser Induced Single Event Upset (SEU) Testing of Commercial Memory Devices with Embedded Error Correction Codes (ECC) [PDF]

open access: diamondJournal of Physics: Conference Series, 2022
Abstract Results of laser-induced single event upset testing of devices with embedded error correction codes are described. Specifically, the memory system, consisting of a Micron MT41K256M16TW-107 IT: P 32 Meg×16×8 banks Dual Dynamic Random Access Memories (DDRs) was tested on a self-made test board. Two samples of each memory system or
Yang Han   +4 more
openaire   +2 more sources

Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset [PDF]

open access: yesMicromachines
Planar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses
Hongwei Zhang   +6 more
doaj   +2 more sources

Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell [PDF]

open access: yesMicromachines, 2023
In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics, especially in VLSI. This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a
Naheem Olakunle Adesina
doaj   +2 more sources

Energy and angular dependence of single event upsets in ESA SEU Monitor

open access: hybridActa Physica Sinica, 2016
The new generation ESA SEU Monitor is first applied to beam verification of Beijing HI-13 Tandem accelerator according to the popularization need of Europe Space Agency and at the desire of contrast of domestic acceleraor with international accelerator.
null Luo Yin-Hong   +4 more
openaire   +2 more sources

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