Results 1 to 10 of about 703,722 (120)
A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications
Micromachines, 2023 The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE).
Ruxue Yao +6 more
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Energy-Efficient Dual-Node-Upset-Recoverable 12T SRAM for Low-Power Aerospace Applications
IEEE Access, 2023 With technology scaling, transistor sizing as well as the distance between them, is decreasing rapidly, thereby reducing the critical charge of sensitive nodes. This reduction makes SRAM cells used for aerospace applications more susceptible to radiation
Soumitra Pal +3 more
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High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
Micromachines, 2022 Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
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npj Biofilms and Microbiomes, 2021 New long read sequencing technologies offer huge potential for effective recovery of complete, closed genomes from complex microbial communities. Using long read data (ONT MinION) obtained from an ensemble of activated sludge enrichment bioreactors we ...
Krithika Arumugam +12 more
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Design of 10T SRAM cell with improved read performance and expanded write margin
IET Circuits, Devices and Systems, 2021 The need of genuine processors operation improvement cultivates the necessity for reliable, low power and fast memories. Several challenges follow this improvement at lower technology nodes.
Ashish Sachdeva, V. K. Tomar
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Micromachines, 2021 Current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) read sensors based on Heusler alloys are promising candidates for ultrahigh areal densities of magnetic data storage technology. In particular, the thickness of reader structures is one
Pirat Khunkitti +2 more
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Performance evaluation of SRAM design using different field effect transistors [PDF]
E3S Web of Conferences, 2023 SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
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A new Dual-Vt 4T SRAM bitcell design
Dianzi Jishu Yingyong, 2018 Reducing the memory bit cell area by reducing the number of transistors is a relatively straightforward solution to achieving a high density SRAM design. In the design of critical SRAM cells, the stability characteristics exhibited by different operating
Zhang Luxuan, Qiao Shushan, Hao Xudan
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Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell
Active and Passive Electronic Components, 2023 This work presents the performance and stability analysis of the proposed built-in self-read and write assist 10T SRAM (BSRWA 10T) for better performance in terms of thermal stability and fast write access, which is suitable for military and aerospace ...
Chokkakula Ganesh, Fazal Noorbasha
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Countermeasures against NBTI degradation on 6T-SRAM cells [PDF]
Advances in Radio Science, 2011 In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability.
E. Glocker +2 more
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