Results 1 to 10 of about 633 (113)

Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies [PDF]

IEEE Journal of Solid-State Circuits, 2006
SRAM cell read stability and write-ability are major concerns in nanometer CMOS technologies, due to the progressive increase in intra-die variability and Vdd scaling. This paper analyzes the read stability N-curve metrics and compares them with the commonly used static noise margin (SNM) metric defined by Seevinck.
Wim Dehaene
exaly   +3 more sources

Low-Power Radiation-Hardened Static Random Access Memory with Enhanced Read Stability for Space Applications

Applied Sciences
In space environments, radiation particles affect the stored values of SRAM cells, and these effects, such as single-event upsets (SEUs) and single-event multiple-node upsets (SEMNUs), pose a threat to the reliability of systems used in the space ...
Hong-Geun Park, Sung-Hun Jo
doaj   +3 more sources

Radiation-Hardened 16T SRAM Cell with Improved Read and Write Stability for Space Applications

Applied Sciences
The critical charge of sensitive nodes decreases as transistors scale down with the advancement of CMOS technology, making SRAM cells more susceptible to soft errors in the space industry.
Jong-Yeob Oh, Sung-Hun Jo
doaj   +3 more sources

A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications

Micromachines, 2023
The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE).
Ruxue Yao, Hongliang Lv, Yuming Zhang, Xu Chen, Yutao Zhang, Xingming Liu, Geng Bai   +6 more
doaj   +1 more source

Energy-Efficient Dual-Node-Upset-Recoverable 12T SRAM for Low-Power Aerospace Applications

IEEE Access, 2023
With technology scaling, transistor sizing as well as the distance between them, is decreasing rapidly, thereby reducing the critical charge of sensitive nodes. This reduction makes SRAM cells used for aerospace applications more susceptible to radiation
Soumitra Pal, Gajendranath Chowdary, Wing-Hung Ki, Chi-Ying Tsui   +3 more
doaj   +1 more source

Neural stability: A reflection of automaticity in reading [PDF]

Neuropsychologia, 2017
Automaticity, the ability to perform a task rapidly with minimal effort, plays a key role in reading fluency and is indexed by rapid automatized naming (RAN) and processing speed. Yet little is known about automaticity's neurophysiologic underpinnings. The more efficiently sound is encoded, the more automatic sound processing can be.
Silvia Siu-Yin, Lam, Travis, White-Schwoch, Steven G, Zecker, Jane, Hornickel, Nina, Kraus   +4 more
openaire   +2 more sources

Stability of Deficits in Reading Fluency and/or Spelling [PDF]

Scientific Studies of Reading, 2019
Deficits in reading fluency and in spelling can dissociate during development, resulting in groups with reading deficit only (RD), spelling deficit only (SD) and combined reading and spelling deficit (RSD). The current study investigated the one-to-two-year longitudinal stability of these subgroups in 167 German-speaking children.
Kristina Moll, Melanie Gangl, Chiara Banfi, Gerd Schulte-Körne, Karin Landerl   +4 more
openaire   +2 more sources

Longitudinal Stability of Reading-Related Skills and Their Prediction of Reading Development [PDF]

Scientific Studies of Reading, 2010
Individual differences in word recognition, spelling, and reading comprehension for 324 children at a mean age of 16 were predicted from their reading-related skills (phoneme awareness, phonological decoding, rapid naming and IQ) at a mean age of 10 years, after controlling the predictors for the autoregressive effects of the correlated reading skills.
Jacqueline, Hulslander, Richard K, Olson, Erik G, Willcutt, Sally J, Wadsworth   +3 more
openaire   +2 more sources

Reading Disability as a Condition of Family Stability [PDF]

Family Process, 1964
To explain a psychogenic symptom like retarded reading, clinicians typically adopt one of two positions. Traditionally, they have regarded it as a substitute for conflicting impulses, but in recent years a number of authors (1, 3, 4, 7, 8, 11, 12, 13) have concentrated on the vicarious satisfaction the symptom provides one or both parents and have ...
Miller, Daniel R., Westman, Jack C.
openaire   +2 more sources

High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM

Micromachines, 2022
Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
doaj   +1 more source