Results 11 to 20 of about 732 (212)
npj Biofilms and Microbiomes, 2021 New long read sequencing technologies offer huge potential for effective recovery of complete, closed genomes from complex microbial communities. Using long read data (ONT MinION) obtained from an ensemble of activated sludge enrichment bioreactors we ...
Krithika Arumugam +12 more
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Design of 10T SRAM cell with improved read performance and expanded write margin
IET Circuits, Devices and Systems, 2021 The need of genuine processors operation improvement cultivates the necessity for reliable, low power and fast memories. Several challenges follow this improvement at lower technology nodes.
Ashish Sachdeva, V. K. Tomar
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Micromachines, 2021 Current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) read sensors based on Heusler alloys are promising candidates for ultrahigh areal densities of magnetic data storage technology. In particular, the thickness of reader structures is one
Pirat Khunkitti +2 more
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Performance evaluation of SRAM design using different field effect transistors [PDF]
E3S Web of Conferences, 2023 SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
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Acuity, crowding, reading and fixation stability
Vision Research, 2007 People with age-related macular disease frequently experience reading difficulty that could be attributed to poor acuity, elevated crowding or unstable fixation associated with peripheral visual field dependence. We examine how the size, location, spacing and instability of retinal images affect the visibility of letters and words at different ...
Falkenberg, Helle K. +2 more
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Impact of NBTI on SRAM Read Stability and Design for Reliability [PDF]
7th International Symposium on Quality Electronic Design (ISQED'06), 2006 Negative Bias Temperature Instability (NBTI) has the potential to become one of the main show-stoppers of circuit reliability in nanometer scale devices due to its deleterious effects on transistor threshold voltage. The degradation of PMOS devices due to NBTI leads to reduced temporal performance in digital circuits.
Sanjay V. Kumar +2 more
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Single-ended 6T SRAM Cell with Low Power/Energy Consumption and High Stability [PDF]
AUT Journal of Electrical Engineering, 2022 In this paper, we propose 6T cell with single-ended characteristics to achieve an improved stability, decrease energy consumption, and decrease leakage power.
Javad Mohagheghi +2 more
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A new Dual-Vt 4T SRAM bitcell design
Dianzi Jishu Yingyong, 2018 Reducing the memory bit cell area by reducing the number of transistors is a relatively straightforward solution to achieving a high density SRAM design. In the design of critical SRAM cells, the stability characteristics exhibited by different operating
Zhang Luxuan, Qiao Shushan, Hao Xudan
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Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell
Active and Passive Electronic Components, 2023 This work presents the performance and stability analysis of the proposed built-in self-read and write assist 10T SRAM (BSRWA 10T) for better performance in terms of thermal stability and fast write access, which is suitable for military and aerospace ...
Chokkakula Ganesh, Fazal Noorbasha
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Design and prototype verification of multi-channel high-speed storage circuit base on PCIE to SATA
Dianzi Jishu Yingyong, 2023 Aiming at the problem that the traditional SATA controller has a single interface and cannot give full play to the performance of the SSD, a multi-channel high-speed storage circuit based on PCIE to SATA is designed.
Wang Qi +4 more
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