Results 21 to 30 of about 652,796 (302)

Performance evaluation of SRAM design using different field effect transistors [PDF]

open access: yesE3S Web of Conferences, 2023
SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah   +5 more
doaj   +1 more source

Acuity, crowding, reading and fixation stability

open access: yesVision Research, 2007
People with age-related macular disease frequently experience reading difficulty that could be attributed to poor acuity, elevated crowding or unstable fixation associated with peripheral visual field dependence. We examine how the size, location, spacing and instability of retinal images affect the visibility of letters and words at different ...
Falkenberg, Helle K.   +2 more
openaire   +2 more sources

Single-ended 6T SRAM Cell with Low Power/Energy Consumption and High Stability [PDF]

open access: yesAUT Journal of Electrical Engineering, 2022
In this paper, we propose 6T cell with single-ended characteristics to achieve an improved stability, decrease energy consumption, and decrease leakage power.
Javad Mohagheghi   +2 more
doaj   +1 more source

Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications

open access: yes, 2021
With aggressive scaling of transistor size and supply voltage, the critical charge of the sensitive nodes is reducing rapidly. As a result, when these deep submicron devices are used in memory cells in the space environment, single-event upsets (SEUs ...
Pal, Soumitra   +3 more
core   +1 more source

Finfet sram cells with asymmetrical bitline access transistors for enhanced read stability [PDF]

open access: yes, 2015
Degraded data stability, weaker write ability, and increased leakage power consumption are the primary concerns in scaled static random-access memory (SRAM) circuits.
Jiao, H Hailong   +8 more
core   +1 more source

A new Dual-Vt 4T SRAM bitcell design

open access: yesDianzi Jishu Yingyong, 2018
Reducing the memory bit cell area by reducing the number of transistors is a relatively straightforward solution to achieving a high density SRAM design. In the design of critical SRAM cells, the stability characteristics exhibited by different operating
Zhang Luxuan, Qiao Shushan, Hao Xudan
doaj   +1 more source

Longitudinal stability of reading profiles in individuals with higher functioning autism [PDF]

open access: yesAutism, 2019
The reading difficulties of individuals with autism spectrum disorders have been established in the literature, with particular attention drawn toward reading comprehension difficulties. Recent papers have highlighted the heterogeneous nature of reading abilities in this population by utilizing statistical methods that allow for investigations of ...
Solari, Emily J   +4 more
openaire   +4 more sources

Countermeasures against NBTI degradation on 6T-SRAM cells [PDF]

open access: yesAdvances in Radio Science, 2011
In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability.
E. Glocker   +2 more
doaj   +1 more source

Design and prototype verification of multi-channel high-speed storage circuit base on PCIE to SATA

open access: yesDianzi Jishu Yingyong, 2023
Aiming at the problem that the traditional SATA controller has a single interface and cannot give full play to the performance of the SSD, a multi-channel high-speed storage circuit based on PCIE to SATA is designed.
Wang Qi   +4 more
doaj   +1 more source

Effect of a dual task on postural control in dyslexic children. [PDF]

open access: yesPLoS ONE, 2012
Several studies have examined postural control in dyslexic children; however, their results were inconclusive. This study investigated the effect of a dual task on postural stability in dyslexic children.
Agathe Legrand   +5 more
doaj   +1 more source

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