Intense pH Sensitivity Modulation in Carbon Nanotube-Based Field-Effect Transistor by Non-Covalent Polyfluorene Functionalization [PDF]
Nanomaterials, 2023 We compare the pH sensing performance of non-functionalized carbon nanotubes (CNT) field-effect transistors (p-CNTFET) and CNTFET functionalized with a conjugated polyfluorene polymer (labeled FF-UR) bearing urea-based moieties (f-CNTFET).
Gookbin Cho +3 more
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Novel Second-Order Fully Differential All-Pass Filter Using CNTFETs [PDF]
Micromachines, 2023 In this paper, a new carbon nanotube field effect transistor (CNTFET)-based second-order fully differential all-pass filter circuit is presented. The realized filter uses CNTFET-based transconductors and grounded capacitors.
Muhammad I. Masud +3 more
doaj +2 more sources
Performance analysis of Ternary Adder and Ternary Multiplier without using Encoders and Decoders [PDF]
E3S Web of Conferences, 2023 This work presents comparison of ternary combinational digital circuits that reduce energy consumption in low-power VLSI (Very Large Scale Integration) design.
C. Venkataiah +6 more
doaj +1 more source
Implementation of N-inputs Ternary to Binary Converter with Multipart division technique Based on CNTFET [PDF]
AUT Journal of Electrical Engineering, 2023 In this paper, the new structure N×M (N-Ternary inputs and M-Binary outputs) Ternary to Binary Converter based on the Carbone Nanao Tube Field Effect Transistor is presented.
Mousa Yousefi, Khalil Monfaredi
doaj +1 more source
Performance evaluation of SRAM design using different field effect transistors [PDF]
E3S Web of Conferences, 2023 SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
doaj +1 more source
Performance analysis of 4-bit ternary adder and multiplier using CNTFET for high speed arithmetic circuits [PDF]
E3S Web of Conferences, 2023 Multiple valued logic (MVL) can represent an exponentially higher number of data/information compared to the binary logic for the same number of logic bits.
C. Venkataiah +6 more
doaj +1 more source
A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study [PDF]
مجله مدل سازی در مهندسی, 2018 For the first time, a new structure is proposed for tunneling CNTFET (T-CNTFET). In this new structure, the drain region is divided into two parts, and the part near the channel has a linear doping profile.
Behrooz Abdi Tahneh, Ali Naderi
doaj +1 more source
CNTFET-Based Design of a High-Efficient Full Adder Using XOR Logic [PDF]
Журнал нано- та електронної фізики, 2016 This paper presents a new low power and high speed full adder based on Carbon Nano Tube Field Effect Transistor (CNTFET) technology. This proposed full adder is based on a XOR logic function using 32 nm CNTFET technology.
Seyedehsomayeh Hatefinasab
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Electron Back Scattering in CNTFETs [PDF]
IEEE Transactions on Electron Devices, 2016 A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications.
Bejenari, Igor, Claus, Martin
openaire +2 more sources
مجلة النهرين للعلوم الهندسية, 2020 This paper introduce a new way to simulate the effect of changing the length and the band gap of the nanotube on the current of carbon nanotube field effect transistors (CNTFET( by using simulation tools: FETToy, CNTFET lab, CNT bands 2.0, since this ...
Khoder Bachour +2 more
doaj +1 more source