Results 41 to 50 of about 1,394 (169)

Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell

Journal of Electronic Science and Technology
In recent years, carbon nanotube field effect transistor (CNTFET) has become an attractive alternative to silicon for designing high-performance, highly stable, and low-power static random access memory (SRAM).
Mahamudul Hassan Fuad, Md Faysal Nayan, Sheikh Shahrier Noor, Rahbaar Yeassin, Russel Reza Mahmud   +4 more
doaj   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Analysis of CNTFET physical compact model

, 2006
— On the basis of acquired knowledge, we present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the
H. Cazin D'honincthun, T. Zimmer, C. Maneux, S. Frégonèse, S. Galdin-retailleau, F- Talence Cedex, J. Goguet, H. Cazin d'Honincthun   +7 more
core   +1 more source

Two low power and high efficient full adder cells based on CNTFET technology [PDF]

, 2018
This paper presents two novel full adder cells based on Carbon Nanotube Field Effect Transistor (CNTFET) technology. According to unique specifications of CNTFET, and its similarity to conventional MOSFET technology, CNTFET technology is considered as a ...
Kreatif 4
core   +1 more source

Single ended 12T cntfet sram cell with high stability for low power smart device applications

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Static random-access memory (SRAM) is the most prevalent type of memory used in current system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor (CMOS) transistors, suffer from low stability and significant power dissipation at ...
S. Jayanthi, P. Raja, M. Elangovan, T.S. Murugesh   +3 more
doaj   +1 more source

Recent Advances in the Synthesis and Processing of Carbon Nanotubes and Carbon Nanocomposites for Energy Storage, Biomedical, and Environmental Applications

ChemistryOpen, Volume 15, Issue 5, May 2026.
This review summarizes recent advances in the synthesis and processing of carbon nanotubes and carbon nanocomposites, highlighting structure–property relationships and their applications in energy storage, biomedical systems, and environmental technologies, with emphasis on performance optimization and sustainable material design.
Noor‐ul‐Huda Altaf, Muhammad Ayyaz, Yaning Zhang, Mudassar Shahzad, Ayesha Khan, Sanam, Wasqa Liaqat, Ambreen Ashar, Roshaan Malik, Zeeshan Ahmad Bhutta   +9 more
wiley   +1 more source

Multicolor Optoelectronic Synapse Enabled by Photon‐Modulated Remote Doping in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, Volume 36, Issue 18, 2 March 2026.
Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim, Hyunbin Kim, Gang Jin Cheon, Dohyun Lee, In Soo Kim, Uiyeon Won, Jongseok Lee, Sang Min Won, Joohoon Kang   +8 more
wiley   +1 more source

Low Power and Energy‐Efficient Design of MTJ/FinFET Circuits

Engineering Reports, Volume 8, Issue 3, March 2026.
This work begins by outlining the fundamental concepts of MTJs, FinFETs, and the conventional hybrid CMOS/MTJ framework. It then explains the operating mechanism and configuration of the proposed STT‐MTJ/FinFET‐based OR logic gate. The final sections present the simulation outcomes and analyze the influence of FinFET fin variation.
Pillem Ramesh, Atul S. M. Tripathi
wiley   +1 more source

Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices

Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.
A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar   +4 more
wiley   +1 more source

Compact Modelling of Chirality and Contact Resistance Effects in CNTFETs [PDF]

EPJ Web of Conferences
This work presents a compact, semi-empirical modelling framework for Carbon Nanotube Field-Effect Transistors (CNTFETs) based on the impact of chiralitydependent electronic properties and contact resistance.
Gladith N Achsah, Nagalakshmi T. J.
doaj   +1 more source