Results 41 to 50 of about 1,113 (217)
Impact of Temperature Variations on Design Parameters of CNTFET [PDF]
, 2021 In this paper we analyse the impact of temperature variations on design parameters of CNTFET with particular reference to the output and trans-characteristics, the output resistance, the transconductance and cut-off frequency.
Roberto Marani, Anna Gina Perri
core
NEGF-based transport phenomena for semiconduncting CNTFET
, 2015 A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties
Alam, A H M Zahirul +7 more
core +1 more source
ChemistryOpen, Volume 15, Issue 5, May 2026.This review summarizes recent advances in the synthesis and processing of carbon nanotubes and carbon nanocomposites, highlighting structure–property relationships and their applications in energy storage, biomedical systems, and environmental technologies, with emphasis on performance optimization and sustainable material design.
Noor‐ul‐Huda Altaf +9 more
wiley +1 more source
Analysis of CNTFET physical compact model
, 2006 — On the basis of acquired knowledge, we present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the
H. Cazin D'honincthun +7 more
core +1 more source
Engineering and Applied Science Research, 2022 This study presents a novel CMOS self-gated flip flop for low power and area efficient applications. The low power operations are achieved by deactivating the clock signal when not required in the circuit.
Owais Ahmad Shah +2 more
doaj
Advanced Functional Materials, Volume 36, Issue 18, 2 March 2026.Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim +8 more
wiley +1 more source
High Precision SAR ADC Using CNTFET for Internet of Things
, 2019 A high precision 10-bit successive approximation register analog to digital converter (ADC) designed and implemented in 32nm CNTFET process technology at the supply of 0.6V, with 73.24 dB SNDR at a sampling rate of 640 MS/s with the average power ...
V. Gowrishankar, K. Venkatachalam
core +1 more source
Single ended 12T cntfet sram cell with high stability for low power smart device applications
e-Prime: Advances in Electrical Engineering, Electronics and EnergyStatic random-access memory (SRAM) is the most prevalent type of memory used in current system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor (CMOS) transistors, suffer from low stability and significant power dissipation at ...
S. Jayanthi +3 more
doaj +1 more source
Low Power and Energy‐Efficient Design of MTJ/FinFET Circuits
Engineering Reports, Volume 8, Issue 3, March 2026.This work begins by outlining the fundamental concepts of MTJs, FinFETs, and the conventional hybrid CMOS/MTJ framework. It then explains the operating mechanism and configuration of the proposed STT‐MTJ/FinFET‐based OR logic gate. The final sections present the simulation outcomes and analyze the influence of FinFET fin variation.
Pillem Ramesh, Atul S. M. Tripathi
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq +4 more
wiley +1 more source