Results 51 to 60 of about 1,113 (217)
Towards an optimal contact metal for CNTFETs
Nanoscale, 2016 Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact ...
Fediai, Artem +6 more
openaire +4 more sources
Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley +1 more source
, 2015 This paper presents different low-leakage power Carbon NanoTube FET (CNTFET) based SRAM cells at nano technology. These SRAM cells are obtained by applying different circuit level leakage power reduction techniques called Sleep transistor, Forced stack ...
Somineni, Rajendra Prasad +2 more
core +1 more source
Compact Modelling of Chirality and Contact Resistance Effects in CNTFETs [PDF]
EPJ Web of ConferencesThis work presents a compact, semi-empirical modelling framework for Carbon Nanotube Field-Effect Transistors (CNTFETs) based on the impact of chiralitydependent electronic properties and contact resistance.
Gladith N Achsah, Nagalakshmi T. J.
doaj +1 more source
A Review of Carbon Nanotubes Field Effect-Based Biosensors
IEEE Access, 2020 Field effect-based biosensors (BioFETs) stand out among other biosensing technologies due to their unique features such as real time screening, ultrasensitive detection, low cost, and amenability to extreme device miniaturization due to the convenient ...
S. S. Alabsi +4 more
doaj +1 more source
Feasible Device Architectures for Ultrascaled CNTFETs
IEEE Transactions on Nanotechnology, 2018 Feasible device architectures for ultrascaled carbon nanotubes field-effect transistors (CNTFETs) are studied down to 5.9 nm using a multiscale simulation approach covering electronic quantum transport simulations and numerical device simulations. Schottky-like and ohmiclike contacts are considered.
Anibal Pacheco-Sanchez +6 more
openaire +2 more sources
Current Mode Four-Quadrant Multiplier Design using CNTFET
, 2016 This paper proposes presents a low power and highspeed four-quadrant analog multiplier in the current mode based on dual translinear loops using 32nm CMOS and 32nm CNTFET technologies to investigate and compare the performance differences of the analog ...
Jeon, Gyunam +7 more
core +1 more source
A Simulation Study of Noise Behavior in Basic Current Mirror using CNTFET and MOSFET
, 2021 We present a aimulation study of noise behavior in basic current mirror using CNTFET and MOSFET, obtaining that the output noise current is always higher for the CNTFET than for the MOS ...
Roberto Marani, Anna Gina Perri
core +1 more source
High-performance dynamic feedback controlbased 8T SRAM using CNTFET technology [PDF]
Serbian Journal of Electrical EngineeringExploration of new materials and device technologies for integrated circuits has become essential due to the exponential growth in demand for highperformance, energy-efficient, and scalable computers. In light of their exceptional electrical and
Kumar Abhishek, Sharma Vipin Kumar
doaj +1 more source
From Nano Robotic Manipulation to Nano Manipulation Robot
SmartBot, Volume 1, Issue 3, September 2025.This review addresses a critical research gap by summarizing advancements in nano robotic manipulation, tracing its evolution from passive observation to autonomous nanomanipulation robots. It explores the interplay of observation, construction, and operation, unveiling fundamental principles of atomic‐scale control. The review establishes a systematic
Zhan Yang +6 more
wiley +1 more source