Results 51 to 60 of about 331 (175)

Temperature and Dielectric Constant Dependent Input and Output Characteristics of CNTFET

Micro &Nano Letters, Volume 20, Issue 1, January/December 2025.
Carbon nanotubes have unique features and special properties that offer great potential for nanoelectronic devices. This study presents a numerical simulation model of semiconducting CNTFETs to determine the electrical properties in the ballistic regime.
Md Faysal Nayan, Sheikh Redwana Hossain, Sabia Sultana, Anika Rahman, Safayat‐Al Imam   +4 more
wiley   +1 more source

DFT based estimation of CNT parameters and simulation-study of GAA CNTFET for nano scale applications

Materials Research Express, 2020
The device dimensions have been consistently scaling down since many developing technologies need smaller and faster integrated circuits for advancement and improvement in both performance and device density.
Bhoop Singh, Prasad B, Dinesh Kumar
doaj   +1 more source

A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses

Engineering Reports, Volume 6, Issue 11, November 2024.
A non‐volatile associative memory leveraging spintronic synapses, employing magnetic tunnel junctions in conjunction with neurons constructed using carbon nanotube field‐effect transistors, is introduced. Our novel associative memory system represents a significant breakthrough in emerging technologies, harnessing the unique strengths of spintronic ...
Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari   +3 more
wiley   +1 more source

Synergistic Hybrid GDI–CNTFET Architecture for Low-Power and Area-Optimized Nanoscale VLSI Circuits

ITEGAM-JETIA
As CMOS technology continues to expand to a deep sub-micron scale, standard designs are confronted with many challenges in terms of energy dissipation, leakage currents and area.
Jayakrishna Padala, Kishore kumar Kamarajugadda, Pavani Movva   +2 more
doaj   +1 more source

Graphene nanoribbon FET technology‐based OTA for optimizing fast and energy‐efficient electronics for IoT application: Next‐generation circuit design

Micro &Nano Letters, Volume 19, Issue 6, November 2024.
This paper thoroughly investigates the performance of graphene nanoribbon field‐effect transistors and conventional MOSFETs, mainly focusing on onedimensional armchair graphene nanoribbons. Results indicate significant enhancements in graphene nanoribbon field‐effect transistors‐based triple cascode operational transconductance amplifiers, including ...
Faraz Hashmi, M Nizamuddin, Mohammad Aleem Farshori, Syed Umar Amin, Zafar Iqbal Khan   +4 more
wiley   +1 more source

An Efficient Gate Library for Ambipolar CNTFET Logic [PDF]

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2011
Recently, several emerging technologies have been reported as potential candidates for controllable ambipolar devices. Controllable ambipolarity is a desirable property that enables the on-line configurability of n-type and p-type device polarity. In this paper, we introduce a new design methodology for logic gates based on controllable ambipolar ...
M. Haykel Ben-Jamaa, Kartik Mohanram, Giovanni De Micheli   +2 more
openaire   +1 more source

Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System

Advanced Intelligent Systems, Volume 6, Issue 6, June 2024.
Fully depleted silicon‐on‐insulator (FDSOI) field‐effect transistor (FET) is demonstrated as for artificial synapse, where FDSOI substrate mitigates leakage current and low power when compared to bulk Si. To validate stable hardware interactions, 5 × 6 synapse arrays using these verified FDSOI FETs are interconnected to 10 × 10 LIF neuron arrays.
Yu‐Rim Jeon, Jeong‐Hoon Kim, Deji Akinwande, Changhwan Choi   +3 more
wiley   +1 more source

Fast Nitrogen Dioxide Sensing with Ultralow‐Power Nanotube Gas Sensors

Advanced Sensor Research, Volume 3, Issue 1, January 2024.
This work presents a fast and ultralow‐power NO2 sensor that uses an individual carbon nanotube as its sensing material. The study reports significantly improved recovery and readout times of 1–5 min and limit of detection below 10 ppb, while maintaining carbon nanotube's known advantage in power consumption (peak power below 10 microwatts).
Seoho Jung, Cosmin Roman, Christofer Hierold   +2 more
wiley   +1 more source

Sensitive Detection of a Gaseous Analyte with Low‐Power Metal–Organic Framework Functionalized Carbon Nanotube Transistors

Advanced Electronic Materials, Volume 10, Issue 1, January 2024.
Outstanding performance in detecting ethanol molecules at sub‐ppb concentrations is achieved by integrating large‐diameter carbon nanotube field‐effect transistors with a metal–organic framework layer. These sensors operate with extremely low power consumption in the picowatt range and exhibit insensitivity to ambient humidity conditions, positioning ...
Sandeep Kumar, Simone Dehm, Laura Wieland, Abhinav Chandresh, Lars Heinke, Benjamin S. Flavel, Ralph Krupke   +6 more
wiley   +1 more source

Proposing Very Low Power Three-Valued Flip-Flops by Using CNTFET Transistors [PDF]

Iranian Journal of Electrical and Electronic Engineering
The scaling limitations of Complementary Metal-Oxide-Semiconductor (CMOS) transistors to achieve better performance have led to the attention of other structures to improve circuit performance. One of these structures is multi-valued circuits.
Amirhossein Salimi, Behzad Ebrahimi, Massoud Dousti   +2 more
doaj