Results 31 to 40 of about 331 (175)

Recent Advances in the Synthesis and Processing of Carbon Nanotubes and Carbon Nanocomposites for Energy Storage, Biomedical, and Environmental Applications

ChemistryOpen, Volume 15, Issue 5, May 2026.
This review summarizes recent advances in the synthesis and processing of carbon nanotubes and carbon nanocomposites, highlighting structure–property relationships and their applications in energy storage, biomedical systems, and environmental technologies, with emphasis on performance optimization and sustainable material design.
Noor‐ul‐Huda Altaf, Muhammad Ayyaz, Yaning Zhang, Mudassar Shahzad, Ayesha Khan, Sanam, Wasqa Liaqat, Ambreen Ashar, Roshaan Malik, Zeeshan Ahmad Bhutta   +9 more
wiley   +1 more source

Single ended 12T cntfet sram cell with high stability for low power smart device applications

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Static random-access memory (SRAM) is the most prevalent type of memory used in current system-on-chips (SOC). SRAMs built using Complementary metal oxide semiconductor (CMOS) transistors, suffer from low stability and significant power dissipation at ...
S. Jayanthi, P. Raja, M. Elangovan, T.S. Murugesh   +3 more
doaj   +1 more source

Multicolor Optoelectronic Synapse Enabled by Photon‐Modulated Remote Doping in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, Volume 36, Issue 18, 2 March 2026.
Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim, Hyunbin Kim, Gang Jin Cheon, Dohyun Lee, In Soo Kim, Uiyeon Won, Jongseok Lee, Sang Min Won, Joohoon Kang   +8 more
wiley   +1 more source

Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell

Journal of Electronic Science and Technology
In recent years, carbon nanotube field effect transistor (CNTFET) has become an attractive alternative to silicon for designing high-performance, highly stable, and low-power static random access memory (SRAM).
Mahamudul Hassan Fuad, Md Faysal Nayan, Sheikh Shahrier Noor, Rahbaar Yeassin, Russel Reza Mahmud   +4 more
doaj   +1 more source

Towards an optimal contact metal for CNTFETs

Nanoscale, 2016
Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact ...
Fediai, Artem, Ryndyk, Dmitry A., Seifert, Gotthard, Mothes, Sven, Claus, Martin, Schröter, Michael, Cuniberti, Gianaurelio   +6 more
openaire   +4 more sources

Low Power and Energy‐Efficient Design of MTJ/FinFET Circuits

Engineering Reports, Volume 8, Issue 3, March 2026.
This work begins by outlining the fundamental concepts of MTJs, FinFETs, and the conventional hybrid CMOS/MTJ framework. It then explains the operating mechanism and configuration of the proposed STT‐MTJ/FinFET‐based OR logic gate. The final sections present the simulation outcomes and analyze the influence of FinFET fin variation.
Pillem Ramesh, Atul S. M. Tripathi
wiley   +1 more source

Feasible Device Architectures for Ultrascaled CNTFETs

IEEE Transactions on Nanotechnology, 2018
Feasible device architectures for ultrascaled carbon nanotubes field-effect transistors (CNTFETs) are studied down to 5.9 nm using a multiscale simulation approach covering electronic quantum transport simulations and numerical device simulations. Schottky-like and ohmiclike contacts are considered.
Anibal Pacheco-Sanchez, Florian Fuchs, Sven Mothes, Andreas Zienert, Jorg Schuster, Sibylle Gemming, Martin Claus   +6 more
openaire   +2 more sources

Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices

Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.
A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar   +4 more
wiley   +1 more source

Compact Modelling of Chirality and Contact Resistance Effects in CNTFETs [PDF]

EPJ Web of Conferences
This work presents a compact, semi-empirical modelling framework for Carbon Nanotube Field-Effect Transistors (CNTFETs) based on the impact of chiralitydependent electronic properties and contact resistance.
Gladith N Achsah, Nagalakshmi T. J.
doaj   +1 more source

A Review of Carbon Nanotubes Field Effect-Based Biosensors

IEEE Access, 2020
Field effect-based biosensors (BioFETs) stand out among other biosensing technologies due to their unique features such as real time screening, ultrasensitive detection, low cost, and amenability to extreme device miniaturization due to the convenient ...
S. S. Alabsi, Abdelaziz Yousif Ahmed, J. O. Dennis, M. H. Md Khir, A. S. Algamili   +4 more
doaj   +1 more source