Results 21 to 30 of about 1,113 (217)
Electron Back Scattering in CNTFETs [PDF]
IEEE Transactions on Electron Devices, 2016 A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications.
Bejenari, Igor, Claus, Martin
openaire +2 more sources
مجلة النهرين للعلوم الهندسية, 2020 This paper introduce a new way to simulate the effect of changing the length and the band gap of the nanotube on the current of carbon nanotube field effect transistors (CNTFET( by using simulation tools: FETToy, CNTFET lab, CNT bands 2.0, since this ...
Khoder Bachour +2 more
doaj +1 more source
Data-Driven State Estimation of Carbon Nanotube Field Effect Transistor with Smart RBF Network [PDF]
Journal of Optoelectronical Nanostructures, 2022 Since 1993, Devices based on CNTs have applicationsranging from nanoelectronics to optoelectronics. Thechallenging issue in designing these devices is that thenonequilibrium Green's function (NEGF) method has tobe employed to solve the Schrödinger and ...
Hossein Afkhami +2 more
doaj +1 more source
CNTFET Based OTRA and its Application as Inverse Low Pass Filter [PDF]
International Journal of Electronics and Telecommunications, 2019 Operational Transresistance Amplifier (OTRA) has been a topic of great interest recently. OTRA has proved itself to be an appropriate device for the analog applications.
Dinesh Prasad +4 more
doaj +1 more source
International Journal of Recent Technology and Engineering, 2019 In this paper, a parameter analysis of CNTFET is presented with different parameters variations such as gate to source voltage vgs, oxide thickness tox, gate oxide dielectric Kox, channel length L, source/drain spacer dielectric constant Kspa ect.
Anitha N, Dr.Srividya P
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A Fast, Numerical Circuit-Level Model of Carbon Nanotube Transistor [PDF]
, 2007 Recently proposed circuit-level models of carbon nanotube transistor (CNT) for SPICE-like simulators suffer from numerical complexities as they rely on numerical evaluation of integrals or internal Newton-Raphson iterations to find solutions of non ...
Dafeng Zhou +5 more
core +1 more source
A high‐capacity and nonvolatile spintronic associative memory hardware accelerator
IET Circuits, Devices &Systems, Volume 17, Issue 4, Page 205-212, July 2023., 2023 A nonvolatile associative memory based on spintronic synapses utilizing magnetic tunnel junction (MTJ) and carbon nanotube field‐effect transistors (CNTFET)‐based neurons is proposed. The proposed design uses the MTJ device because of its fascinating features, such as reliable reconfiguration and nonvolatility.
Mahan Rezaei +3 more
wiley +1 more source
Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs) [PDF]
Журнал нано- та електронної фізики, 2017 Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using ...
DeviВ Dass, RakeshВ Vaid
doaj +1 more source
Analysis and Design of Current mode logic based on CNTFET
, 2023 In this paper we present a current mode gate based on differential pair as an application of CNTFET. The proposed circuit has two output logic gates, one NAND and the other is AND.
Gennaro Gelao +2 more
core +1 more source
Review—Critical Analysis of CNTFET-Based Electronic Circuits Design
, 2023 In this review we present many design of CNTFET-based circuits, already proposed by us and here critically examined. For some of these, we compare the performance of proposed circuits both in CNTFET and CMOS technology. For CNTFET model, we use a compact,
R. Marani +3 more
core +1 more source