Results 21 to 30 of about 331 (175)

Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs) [PDF]

open access: yesЖурнал нано- та електронної фізики, 2017
Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using ...
DeviВ Dass, RakeshВ Vaid
doaj   +1 more source

LOW LEAKAGE CHARGE RECYCLING TECHNIQUE FOR POWER MINIMIZATION IN CNTFET CIRCUITS

open access: yesActa Polytechnica, 2019
Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most promising candidates in the near future for digital design due to its better electrostatics and higher mobility characteristics.
Manickam Kavitha, Alagar M. Kalpana
doaj   +1 more source

Multiplexor 4 x 1 de alto rendimiento basado en un transistor de efecto de campo de nanotubos de carbono de pared simple con lógica de transistor de paso similar a CMOS

open access: yesRevista Ingeniería UC, 2020
En los últimos años, según muchos estudios, el transistor de efecto de campo de nanotubos de carbono (CNTFET) mostró un alto rendimiento en muchos circuitos lógicos debido a sus propiedades y en comparación con otros homólogos de silicio.
Hamed Fooladvand   +2 more
doaj   +1 more source

Design and Simulation of an Efficient Quaternary Full-Adder Based on Carbon Nanotube Field Effect Transistor [PDF]

open access: yesInternational Journal of Industrial Electronics, Control and Optimization
The essential reason for implementing multilevel processing systems is to reduce the number of semiconductor elements and hence the complexity of system.
Farzaneh Ahari   +2 more
doaj   +1 more source

Carbon Nanotube Detectors and Spectrometers for the Terahertz Range

open access: yesCrystals, 2020
We present the compact unified charge control model (UCCM) for carbon nanotube field-effect transistors (CNTFETs) to enable the accurate simulation of the DC characteristics and plasmonic terahertz (THz) response in the CNTFETs.
Junsung Park   +3 more
doaj   +1 more source

Design and analysis of energy‐efficient compressors based on low‐power XOR gates in carbon nanotube technology

open access: yesIET Circuits, Devices and Systems, 2022
Compressors are the fundamental components in multipliers to accumulate and reduce partial product stages in a parallel manner. This study presents several architectures for low‐power 4‐2 and 5‐2 compressors, which are based on the proposed circuits of ...
Elmira Tavakkoli, Mahdi Aminian
doaj   +1 more source

Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit [PDF]

open access: yesЖурнал нано- та електронної фізики, 2017
This paper proposes the novel low power and area efficient ALU (Arithmetic and Logic Unit) using adder and multiplexers. The adder and multiplexer are realized by using CNTFET (Carbon Nano Tube Field Effect Transistor) A verilog model of MOSFET (Metal ...
K.В Nehru   +2 more
doaj   +1 more source

Study of CNTFETs as Memory Devices

open access: yesECS Journal of Solid State Science and Technology, 2022
In this paper we propose a procedure for the study of CNTFETs as memory devices. In particular we analyze the design of a 6-T SRAM, in order to evaluate the writing and reading times, in single and double supplies, the static noise margin, the static power consumption and the power-delay product. For these goals, we use a CNTFET model, already proposed
R. Marani, A. G. Perri
openaire   +1 more source

Low power area efficient self-gated flip flop: Design, implementation and analysis in emerging devices

open access: yesEngineering and Applied Science Research, 2022
This study presents a novel CMOS self-gated flip flop for low power and area efficient applications. The low power operations are achieved by deactivating the clock signal when not required in the circuit.
Owais Ahmad Shah   +2 more
doaj  

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

open access: yesphysica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian   +6 more
wiley   +1 more source

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