Ultra-Low Power 5T-SRAM Cell Design using different CNTFET for exploiting Read/Write Assist Techniques [PDF]
Iranian Journal of Electrical and Electronic Engineering, 2023 In today's technological environment, designing the Static Random Access Memory (SRAM) is most vital and critical memory devices. In this manuscript, two kinds of 5TSRAM are designed using different CNTFET such as Dual-ChiralityGate all around (GAA ...
G. S. Kumar, G. Mamatha
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Performance analysis of 4-bit ternary adder and multiplier using CNTFET for high speed arithmetic circuits [PDF]
E3S Web of Conferences, 2023 Multiple valued logic (MVL) can represent an exponentially higher number of data/information compared to the binary logic for the same number of logic bits.
C. Venkataiah +6 more
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LOW LEAKAGE CHARGE RECYCLING TECHNIQUE FOR POWER MINIMIZATION IN CNTFET CIRCUITS [PDF]
Acta Polytechnica, 2019 Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most promising candidates in the near future for digital design due to its better electrostatics and higher mobility characteristics.
Manickam Kavitha, Alagar M. Kalpana
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Advanced Materials InterfacesNanoplastics are persistent pollutants that may act as vectors of various inorganic and organic pollutants. Due to their small size and complex nature, their identification in environmental samples is still extremely difficult.
Giulia Elli +6 more
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Implementation of N-inputs Ternary to Binary Converter with Multipart division technique Based on CNTFET [PDF]
AUT Journal of Electrical Engineering, 2023 In this paper, the new structure N×M (N-Ternary inputs and M-Binary outputs) Ternary to Binary Converter based on the Carbone Nanao Tube Field Effect Transistor is presented.
Mousa Yousefi, Khalil Monfaredi
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Performance evaluation of SRAM design using different field effect transistors [PDF]
E3S Web of Conferences, 2023 SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
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A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study [PDF]
مجله مدل سازی در مهندسی, 2018 For the first time, a new structure is proposed for tunneling CNTFET (T-CNTFET). In this new structure, the drain region is divided into two parts, and the part near the channel has a linear doping profile.
Behrooz Abdi Tahneh, Ali Naderi
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CNTFET-Based Design of a High-Efficient Full Adder Using XOR Logic [PDF]
Журнал нано- та електронної фізики, 2016 This paper presents a new low power and high speed full adder based on Carbon Nano Tube Field Effect Transistor (CNTFET) technology. This proposed full adder is based on a XOR logic function using 32 nm CNTFET technology.
Seyedehsomayeh Hatefinasab
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مجلة النهرين للعلوم الهندسية, 2020 This paper introduce a new way to simulate the effect of changing the length and the band gap of the nanotube on the current of carbon nanotube field effect transistors (CNTFET( by using simulation tools: FETToy, CNTFET lab, CNT bands 2.0, since this ...
Khoder Bachour +2 more
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Data-Driven State Estimation of Carbon Nanotube Field Effect Transistor with Smart RBF Network [PDF]
Journal of Optoelectronical Nanostructures, 2022 Since 1993, Devices based on CNTs have applicationsranging from nanoelectronics to optoelectronics. Thechallenging issue in designing these devices is that thenonequilibrium Green's function (NEGF) method has tobe employed to solve the Schrödinger and ...
Hossein Afkhami +2 more
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