Results 11 to 20 of about 331 (175)

Design and Analysis of Digitally Tunable Transconductance Amplifier (DTTA) Using CNTFETs [PDF]

open access: yesThe Scientific World Journal
Carbon nanotube-FETs (CNTFETs) have become a potential challenger because of their exceptional electrical properties and compatibility with conventional CMOS technology.
Shailendra Kumar Tripathi   +3 more
doaj   +3 more sources

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution [PDF]

open access: yesMicromachines
As the traditional silicon-based CMOS technology advances into the nanoscale stage, approaching its physical limits, the Carbon Nanotube Field-effect Transistor (CNTFET) is considered to be the most significant transistor technology beyond Moore’s era ...
Zhifeng Chen   +5 more
doaj   +2 more sources

Chemical-free and scalable process for the fabrication of a uniform array of liquid-gated CNTFET, evaluated by KCl electrolyte [PDF]

open access: yesScientific Reports, 2021
Biosensors based on liquid-gated carbon nanotubes field-effect transistors (LG-CNTFETs) have attracted considerable attention, as they offer high sensitivity and selectivity; quick response and label-free detection.
Pankaj B. Agarwal   +5 more
doaj   +2 more sources

Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell [PDF]

open access: yesSensors, 2021
Aerospace equipages encounter potential radiation footprints through which soft errors occur in the memories onboard. Hence, robustness against radiation with reliability in memory cells is a crucial factor in aerospace electronic systems.
Bharathi Raj Muthu   +6 more
doaj   +2 more sources

Carbon-Nanotube-Based Monolithic CMOS Platform for Electrochemical Detection of Neurotransmitter Glutamate [PDF]

open access: yesSensors, 2019
We present a monolithic biosensor platform, based on carbon-nanotube field-effect transistors (CNTFETs), for the detection of the neurotransmitter glutamate.
Alexandra Dudina   +2 more
doaj   +2 more sources

A CNTFET based process variation resilient SRAM design for stable low power and half select free operation [PDF]

open access: yesScientific Reports
Static random-access memory (SRAM) design at nanoscale dimensions faces critical challenges arising from degraded stability, excessive power dissipation, and heightened sensitivity to process variations, particularly under low-voltage operation.
Shams Ul Haq   +5 more
doaj   +2 more sources

Polystyrene Nanoplastic‐Mercury Complexes Detection by Electrolyte‐Gated Carbon Nanotube Field‐Effect Transistor‐Based Sensors

open access: yesAdvanced Materials Interfaces
Nanoplastics are persistent pollutants that may act as vectors of various inorganic and organic pollutants. Due to their small size and complex nature, their identification in environmental samples is still extremely difficult.
Giulia Elli   +6 more
doaj   +2 more sources

Ultra-Low Power 5T-SRAM Cell Design using different CNTFET for exploiting Read/Write Assist Techniques [PDF]

open access: yesIranian Journal of Electrical and Electronic Engineering, 2023
In today's technological environment, designing the Static Random Access Memory (SRAM) is most vital and critical memory devices. In this manuscript, two kinds of 5TSRAM are designed using different CNTFET such as Dual-ChiralityGate all around (GAA ...
G. S. Kumar, G. Mamatha
doaj  

Data-Driven State Estimation of Carbon Nanotube Field Effect Transistor with Smart RBF Network [PDF]

open access: yesJournal of Optoelectronical Nanostructures, 2022
Since 1993, Devices based on CNTs have applicationsranging from nanoelectronics to optoelectronics. Thechallenging issue in designing these devices is that thenonequilibrium Green's function (NEGF) method has tobe employed to solve the Schrödinger and ...
Hossein Afkhami   +2 more
doaj   +1 more source

Parameter Analysis of CNTFET

open access: yesInternational Journal of Recent Technology and Engineering, 2019
In this paper, a parameter analysis of CNTFET is presented with different parameters variations such as gate to source voltage vgs, oxide thickness tox, gate oxide dielectric Kox, channel length L, source/drain spacer dielectric constant Kspa ect.
Anitha N, Dr.Srividya P
openaire   +2 more sources

Home - About - Disclaimer - Privacy