Results 61 to 70 of about 1,394 (169)
PERFORMANCE EVALUTION OF CNTFET-BASED SRAM CELL DESIGN [PDF]
, 2014 Carbon Nanotube Field-Effect Transistor (CNTFET) technology with their excellent current capabilities, ballistic transport operation and superior thermal conductivities has proved to be a very promising and superior alternative to the conventional CMOS ...
GUPTA, ANU +5 more
core +1 more source
Novel carbon nanotube model for low energy loss field-effect transistor
Cogent Engineering, 2017 Carbon nanotube (CNT) shows excellent and novel performances in the field of electrical engineering. The electrical properties of CNT consist of exceptional behaviour that will help to manufacture very tiny semiconductor device.
Soheli Farhana
doaj +1 more source
Carbon Nanotube 3D Integrated Circuits: From Design to Applications
Advanced Functional Materials, Volume 35, Issue 34, August 22, 2025.As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu +3 more
wiley +1 more source
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.Approximate computing (AC)‐based arithmetic circuits have not been reliable in sensitive applications like difference detection of bioimages. This article declares that the challenge is not established constantly. Accordingly, a new AC‐based compressor with 16 transistors based on compound gates is proposed.
Forouzan Bahrami +3 more
wiley +1 more source
Temperature and Dielectric Constant Dependent Input and Output Characteristics of CNTFET
Micro &Nano Letters, Volume 20, Issue 1, January/December 2025.Carbon nanotubes have unique features and special properties that offer great potential for nanoelectronic devices. This study presents a numerical simulation model of semiconducting CNTFETs to determine the electrical properties in the ballistic regime.
Md Faysal Nayan +4 more
wiley +1 more source
Materials Research Express, 2020 The device dimensions have been consistently scaling down since many developing technologies need smaller and faster integrated circuits for advancement and improvement in both performance and device density.
Bhoop Singh, Prasad B, Dinesh Kumar
doaj +1 more source
Engineering Reports, Volume 6, Issue 11, November 2024.A non‐volatile associative memory leveraging spintronic synapses, employing magnetic tunnel junctions in conjunction with neurons constructed using carbon nanotube field‐effect transistors, is introduced. Our novel associative memory system represents a significant breakthrough in emerging technologies, harnessing the unique strengths of spintronic ...
Mahan Rezaei +3 more
wiley +1 more source
Review—Current Mirror Analysis and Design in CNTFET and CMOS Technology Including Noise Effects
, 2022 We first review a procedure that, through the design of a basic current mirror, allows a comparison between carbon nanotube field-effect transistor (CNTFET) and metal oxide semiconductor (MOS) technology. For every simulation parameters of merit, such as
Gennaro Gelao +5 more
core +1 more source
Synergistic Hybrid GDI–CNTFET Architecture for Low-Power and Area-Optimized Nanoscale VLSI Circuits
ITEGAM-JETIAAs CMOS technology continues to expand to a deep sub-micron scale, standard designs are confronted with many challenges in terms of energy dissipation, leakage currents and area.
Jayakrishna Padala +2 more
doaj +1 more source
Micro &Nano Letters, Volume 19, Issue 6, November 2024.This paper thoroughly investigates the performance of graphene nanoribbon field‐effect transistors and conventional MOSFETs, mainly focusing on onedimensional armchair graphene nanoribbons. Results indicate significant enhancements in graphene nanoribbon field‐effect transistors‐based triple cascode operational transconductance amplifiers, including ...
Faraz Hashmi +4 more
wiley +1 more source