Results 61 to 70 of about 1,113 (217)

Carbon Nanotube 3D Integrated Circuits: From Design to Applications

open access: yesAdvanced Functional Materials, Volume 35, Issue 34, August 22, 2025.
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu   +3 more
wiley   +1 more source

Development of high frequency 14 nm CNTFET model

open access: yes, 2016
Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14 nm CNTFET model has been proposed to operate in high frequency performance.
Farhana, Soheli, Alam, A.H.M Zahirul
core   +1 more source

Accuracy Improvement in Approximate Sum of Absolute Differences Circuit Using Error Correction Module for Difference Detection in Bio‐Images

open access: yesIET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
Approximate computing (AC)‐based arithmetic circuits have not been reliable in sensitive applications like difference detection of bioimages. This article declares that the challenge is not established constantly. Accordingly, a new AC‐based compressor with 16 transistors based on compound gates is proposed.
Forouzan Bahrami   +3 more
wiley   +1 more source

Novel carbon nanotube model for low energy loss field-effect transistor

open access: yesCogent Engineering, 2017
Carbon nanotube (CNT) shows excellent and novel performances in the field of electrical engineering. The electrical properties of CNT consist of exceptional behaviour that will help to manufacture very tiny semiconductor device.
Soheli Farhana
doaj   +1 more source

Temperature and Dielectric Constant Dependent Input and Output Characteristics of CNTFET

open access: yesMicro &Nano Letters, Volume 20, Issue 1, January/December 2025.
Carbon nanotubes have unique features and special properties that offer great potential for nanoelectronic devices. This study presents a numerical simulation model of semiconducting CNTFETs to determine the electrical properties in the ballistic regime.
Md Faysal Nayan   +4 more
wiley   +1 more source

Characteristics and Evaluation of Nano Electronic Devices [PDF]

open access: yesEngineering and Technology Journal, 2014
Recent developments in nanotechnology have demonstrated that it is feasible to manufacture Nano electronics devices using Carbon Nano Tubes (CNTs) because the mobility between the channels is increased while the switching delay is decreased.
Hanan A. R. Akkar, Sarmad Khalooq
doaj   +1 more source

A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses

open access: yesEngineering Reports, Volume 6, Issue 11, November 2024.
A non‐volatile associative memory leveraging spintronic synapses, employing magnetic tunnel junctions in conjunction with neurons constructed using carbon nanotube field‐effect transistors, is introduced. Our novel associative memory system represents a significant breakthrough in emerging technologies, harnessing the unique strengths of spintronic ...
Mahan Rezaei   +3 more
wiley   +1 more source

Graphene nanoribbon FET technology‐based OTA for optimizing fast and energy‐efficient electronics for IoT application: Next‐generation circuit design

open access: yesMicro &Nano Letters, Volume 19, Issue 6, November 2024.
This paper thoroughly investigates the performance of graphene nanoribbon field‐effect transistors and conventional MOSFETs, mainly focusing on onedimensional armchair graphene nanoribbons. Results indicate significant enhancements in graphene nanoribbon field‐effect transistors‐based triple cascode operational transconductance amplifiers, including ...
Faraz Hashmi   +4 more
wiley   +1 more source

Synaptic Characteristics of Fully Depleted Silicon‐on‐Insulator Metal‐Oxide‐Semiconductor Field‐Effect Transistors and Synapse‐Neuron Arrayed Neuromorphic Hardware System

open access: yesAdvanced Intelligent Systems, Volume 6, Issue 6, June 2024.
Fully depleted silicon‐on‐insulator (FDSOI) field‐effect transistor (FET) is demonstrated as for artificial synapse, where FDSOI substrate mitigates leakage current and low power when compared to bulk Si. To validate stable hardware interactions, 5 × 6 synapse arrays using these verified FDSOI FETs are interconnected to 10 × 10 LIF neuron arrays.
Yu‐Rim Jeon   +3 more
wiley   +1 more source

An Efficient Gate Library for Ambipolar CNTFET Logic [PDF]

open access: yesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2011
Recently, several emerging technologies have been reported as potential candidates for controllable ambipolar devices. Controllable ambipolarity is a desirable property that enables the on-line configurability of n-type and p-type device polarity. In this paper, we introduce a new design methodology for logic gates based on controllable ambipolar ...
M. Haykel Ben-Jamaa   +2 more
openaire   +1 more source

Home - About - Disclaimer - Privacy