Results 81 to 90 of about 1,394 (169)
Structures robustes pour circuits logiques à base de CNTFET
actes sur CDNational audienceCet article traite de l'évaluation de la robustesse de structures basées sur des CNTFET, redondantes aux niveaux transistor et logique (Inverseur).
Leveugle, Régis +2 more
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Effects of Temperature in CNTFET-Based Design of Analog Circuits
In this paper we simulate the effects of temperature in CNTFET- based design of analog circuits, enhancing a semi-empirical model of CNTFET, already proposed by us, in which the temperature variation in the drain current equation and in energy bandgap is
Marani, Roberto +8 more
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A Novel Design of Penternary Inverter Gate Based on Carbon Nano Tube [PDF]
This paper investigates a novel design of penternary logic gates usingcarbon nanotube field effect transistors (CNTFETs). CNTFET is a suitable candidate forreplacing MOSFET with some useful properties, such as the capability of having thedesired ...
Mahdieh Nayeri +2 more
doaj
Design and Simulation Study of Full Adder Circuit Based on CNTFET and CMOS Technology by ADS
In this paper we propose the design of a novel full adder circuit, based both on CNTFET and CMOS technology, in order to compare them. The proposed full adder circuit is based on NAND and NOT logic gates.
Marani, Roberto +5 more
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Design and Simulation of a New Optimized Full-Adder Using Carbon Nano Tube Technology [PDF]
The full adder circuit is one of the most significant and prominent fundamental parts in digital processors and integrated circuits since it can be used for implementing all four basic computational functions including: addition, subtraction ...
Abbas Asadi Aghbolaghi, Mehran Emadi
doaj
Spice model design for carbon nanotube field effect transistor (CNTFET)
In this paper, the design of SPICE circuit model has been discussed for Carbon Nanotube Field Effect Transistor (CNTFET) and predict device high frequency performance. An enhancement mode SPICE circuit model for nanotube transistor has been developed.
A. H. M. Zahirul Alam +5 more
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A comparative study of CNTFET and MOSFET devices through the design of current mirrors
In this review, we present a comparative study of CNTFETs and MOSFET devices, through the design of self-biased cascode current mirror. In particular, the CNTFET used is a C-CNTFET and the MOSFET is in 32 nm technology to have comparable results.
Perri AG, Marani R
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CNTFET-based SRAM cell design using INDEP technique
As the size of the transistor decreases in the nanoscale regime, certain parameters, such as, cell stability, power dissipation, and delay, have changed.
Mehwish Maqbool +2 more
doaj +1 more source
With approaching the limit value, many problems have arisen in the scaling of MOSFET sizes. Alternative solutions have been investigated for many problems such as short channel effects and reduced gate control, which are caused by reducing the size of ...
ALÇI, MUSTAFA +2 more
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Efficient Parameters Selection for CNTFET Modelling Using Artificial Neural Networks [PDF]
In this article different types of artificial neural networks (ANN) were used for CNTFET (carbon nanotube transistors) simulation. CNTFET is one of the most likely alternatives to silicon transistors due to its excellent electronic properties.
Roya Abdollahzadeh Badelbo +2 more
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