Results 1 to 10 of about 266 (112)
X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories
This article has been accepted in a future issue of IEEE Transactions on Circuits and Systems-I: Regular ...
Amogh Agrawal +3 more
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Soft errors in semiconductor memories occur due to charged particle strikes on sensitive nodes. Technology and voltage scaling increased dramatically the susceptibility of static random access memories (SRAMs) to soft errors. In this study, the authors present AS8‐SRAM, a new asymmetric memory cell that enhances the soft error resilience of SRAMs by ...
Ihsen Alouani +4 more
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Performance evaluation of SRAM design using different field effect transistors [PDF]
SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
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Performance Analysis Of SRAM and Dram in Low Power Application [PDF]
All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S. +5 more
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Combining with a static random-access memory (SRAM) and resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell is proposed in this study. With differential mode, a pair of 1T1R RRAM is added to 6T SRAM storage node. By optimizing
Jiayu Yin, Wenli Liao, Chengying Chen
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An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time
Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin +4 more
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Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS2 transistors
Summary: Driven by technologies such as machine learning, artificial intelligence, and internet of things, the energy efficiency and throughput limitations of the von Neumann architecture are becoming more and more serious.
Fan Wang +7 more
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Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
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In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics.
Sangik Choi +3 more
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Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design
The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy +3 more
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