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Nonvolatile static random access memory based on spin-transistor architecture
Journal of Applied Physics, 2009Yusuke Shuto +2 more
exaly
High density COS/MOS 1024-bit static random access memory
IEEE Journal of Solid-State Circuits, 1975exaly
4H-SiC Radiation Hardened Static Random Access Memory
IEEE Electron Device LettersShin-Ichiro Kuroki +2 more
exaly
A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor [PDF]
A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
doaj +2 more sources
One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors [PDF]
In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics.
Sangik Choi +3 more
doaj +2 more sources
Pitfall of the Strongest Cells in Static Random Access Memory Physical Unclonable Functions [PDF]
Static Random Access Memory (SRAM) Physical Unclonable Functions (PUFs) are some of the most popular PUFs that provide a highly-secured solution for secret key storage.
Mingyang Gong +3 more
doaj +2 more sources
Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects [PDF]
We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided ...
Minji Bang +4 more
doaj +2 more sources

