Results 31 to 40 of about 17,368,081 (283)

An N-Type Pseudo-Static eDRAM Macro with Reduced Access Time for High-Speed Processing-in-Memory in Intelligent Sensor Hub Applications

Sensors, 2023
This paper introduces an n-type pseudo-static gain cell (PS-nGC) embedded within dynamic random-access memory (eDRAM) for high-speed processing-in-memory (PIM) applications.
Subin Kim, Ingu Jeong, Jun-Eun Park
doaj   +1 more source

Effects of total ionizing dose on transient ionizing radiation upset sensitivity of 40–180 nm SRAMs

AIP Advances, 2022
Effects of total ionizing dose (TID) on the transient radiation upset sensitivity of commercial static random access memories (SRAMs) were investigated.
Junlin Li, Wei Chen, Ruibin Li, Guizhen Wang, Chao Qi, Yan Liu, Xiaoming Jin, Xiaoyan Bai, Chenhui Wang   +8 more
doaj   +1 more source

Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects

Micromachines, 2023
We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided ...
Minji Bang, Jonghyeon Ha, Gyeongyeop Lee, Minki Suh, Jungsik Kim   +4 more
doaj   +1 more source

Combination-Encoding Content-Addressable Memory With High Content Density

IEEE Access, 2019
Recently, resistance switch-based content-addressable memory (RCAM) has been proposed as an alternative to the mainstream static random-access memory-based CAM because of its high integration potential and low static energy consumption. However, RCAM has
Guhyun Kim, Vladimir Kornijcuk, Jeeson Kim, Dohun Kim, Cheol Seong Hwang, Doo Seok Jeong   +5 more
doaj   +1 more source

Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory

Micromachines, 2019
In order to simulate a circuit by applying various logic circuits and full chip using the HSPICE model, which can consider electrical coupling proposed in the previous research, it is investigated whether additional electrical coupling other than ...
Tae Jun Ahn, Bum Ho Choi, Sung Kyu Lim, Yun Seop Yu   +3 more
doaj   +1 more source

A fully integrated analogue closed-loop in-memory computing accelerator based on static random-access memory

Nature Electronics
In-memory computing combines memory and computing together in a single processing unit, eliminating the energy and latency overheads associated with data transfer between memory and computing units, which occurs in conventional systems.
P. Mannocci, C. Zucchelli, I. Andreoli, A. Pezzoli, E. Melacarne, G. Pedretti, F. Sancandi, C. Villa, Zhong Sun, U. Spagnolini, D. Ielmini   +10 more
semanticscholar   +1 more source

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories [PDF]

IEEE Transactions on Circuits and Systems Part 1: Regular Papers, 2017
Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying ...
Amogh Agrawal, Akhilesh R. Jaiswal, Chankyu Lee, K. Roy   +3 more
semanticscholar   +1 more source

Development of an abstract model for a non-volatile static random access memory [PDF]

, 2004
The capability to protect against power fluctuations, which eventually prevents the corruption of the memory contents makes non-volatile static random access memory a very good choice for use in highly reliability applications.
RAO, SSSP, Chandorkar, A. N., Rao, S.S. S.P., THARAKAN, KTO, Tharakan, K.T. Oommen, CHANDORKAR, AN   +5 more
core   +1 more source

Review of Physically Unclonable Functions (PUFs): Structures, Models, and Algorithms

Frontiers in Sensors, 2022
Physically unclonable functions (PUFs) are now an essential component for strengthening the security of Internet of Things (IoT) edge devices. These devices are an important component in many infrastructure systems such as telehealth, commerce, industry,
Fayez Gebali, Mohammad Mamun
doaj   +1 more source

Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor [PDF]

, 2018
This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell.
Hashim, Yasir, Yasir Hashim
core   +1 more source