Results 11 to 20 of about 26,207 (255)

Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments [PDF]

open access: yesMicromachines
As semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur ...
Se-Yeon Park, Eun Gyo Jeong, Sung-Hun Jo
doaj   +2 more sources

Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory [PDF]

open access: yesMicromachines, 2019
In order to simulate a circuit by applying various logic circuits and full chip using the HSPICE model, which can consider electrical coupling proposed in the previous research, it is investigated whether additional electrical coupling other than ...
Tae Jun Ahn   +3 more
doaj   +2 more sources

Low-power adiabatic 9T static random access memory

open access: yesThe Journal of Engineering, 2014
In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi   +3 more
doaj   +2 more sources

Design of Static Random-Access Memory Cell for Fault Tolerant Digital System

open access: yesApplied Sciences, 2022
This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj   +3 more sources

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis   +11 more
doaj   +3 more sources

Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors [PDF]

open access: yesNature Communications
Static Random-Access Memory (SRAM) cells are fundamental in computer architecture, serving crucial roles in cache memory, buffers, and registers due to their high-speed performance and low power consumption.
Muhtasim Ul Karim Sadaf   +8 more
doaj   +2 more sources

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

open access: yesIEEE Transactions on Circuits and Systems I: Regular Papers, 2018
This article has been accepted in a future issue of IEEE Transactions on Circuits and Systems-I: Regular ...
Amogh Agrawal   +2 more
exaly   +3 more sources

Performance evaluation of SRAM design using different field effect transistors [PDF]

open access: yesE3S Web of Conferences, 2023
SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah   +5 more
doaj   +1 more source

Security and Privacy of Blockchain-Based Single-Bit Cache Memory Architecture for IoT Systems

open access: yesIEEE Access, 2022
This paper provides an overview of blockchain technology’s security and privacy features, as well as an overview of IoT-based cache memory and single-bit six transistor static random-access memory cell sense amplifier architecture.
Reeya Agrawal   +3 more
doaj   +1 more source

Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory

open access: yesSensors, 2023
This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in ...
Sangheon Lee   +2 more
doaj   +1 more source

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