Results 11 to 20 of about 17,368,081 (283)

Low-power adiabatic 9T static random access memory

The Journal of Engineering, 2014
In this paper, the authors propose a novel static random access memory (SRAM) that employs the adiabatic logic principle. To reduce energy dissipation, the proposed adiabatic SRAM is driven by two trapezoidal-wave pulses.
Yasuhiro Takahashi, Nazrul Anuar Nayan, Toshikazu Sekine, Michio Yokoyama   +3 more
doaj   +2 more sources

Static random‐access memory with embedded arithmetic logic units for in‐memory computing and ternary content addressable memory operation

Electronics Letters, 2022
In‐memory computing (IMC) is a novel computing architecture that presents considerable potential in solving the data transmission and energy consumption problems faced by the von Neumann architecture.
Zhiting Lin, Xing Fan, Shuiyue Yu, Chunyu Peng, Qiang Zhao, Xiulong Wu   +5 more
doaj   +2 more sources

4H-SiC Radiation Hardened Static Random Access Memory

IEEE Electron Device Letters
4H-SiC static random-access memory (SRAM) was suggested and demonstrated for extreme-environment applications. The 4H-SiC SRAMs show the proper memory states with high static noise margins (SNMs).
S. Kuroki, Toya Kai, Taisei Ozaki, K. Kojima, A. Takeyama, T. Ohshima, Yasunori Tanaka   +6 more
semanticscholar   +2 more sources

Si/SiGe tunnelling static random access memories

, 2012
One of the limits to the low power operation of MOSFET devices is the minimum subthreshold slope defined by the p-n junctions in the devices. A tunneling static random access memory is demonstrated with a supply voltage of 0.42 V, well below the minimum
Paul, D., Ternent, G.
core   +6 more sources

Design and Leakage Power Optimization of 6T Static Random Access Memory Cell Using Cadence Virtuoso

International journal of electrical and electronics research, 2022
Reduction of Leakage power at nano meter regime has become a challenging factor for VLSI designers. This is owing to the need for low-power, battery-powered portable pads, high-end gadgets and various communication devices. Memories are made up of Static
S. Banu, Shweta Gupta
semanticscholar   +1 more source

Design, Process, and Characterization of Complementary Metal–Oxide–Semiconductor Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC

ECS Journal of Solid State Science and Technology, 2022
In this study, the performance of complementary metal–oxide–semiconductor (MOS) circuits fabricated on SiC substrates was investigated by designing several digital and analog circuits, and a unique process flow was developed to integrate n-type MOS ...
Chia-Lung Hung, B. Tsui, Teresa Tsai, Li-Jung Lin, Yu-Xin Wen   +4 more
semanticscholar   +1 more source

March AB, March AB1: new March tests for unlinked dynamic memory faults [PDF]

, 2005
Among the different types of algorithms proposed to test static random access memories (SRAMs), March tests have proven to be faster, simpler and regularly structured. New memory production technologies introduce new classes of faults usually referred to
Di Natale, Giorgio, Bosio, Alberto, A. Benso, P. Prinetto, A. Bosio, G. Di Natale, Benso, Alfredo, Prinetto, Paolo Ernesto, S. Di Carlo, Di Carlo, Stefano   +9 more
core   +1 more source

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

IEEE Access, 2022
In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices.
Golnaz Korkian, Daniel Leon, Francisco J. Franco, Juan C. Fabero, Manon Letiche, Yolanda Morilla, Pedro Martin-Holgado, Helmut Puchner, Hortensia Mecha, Juan A. Clemente   +9 more
doaj   +1 more source

An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time

Applied Sciences, 2022
Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin, Wenli Liao, Yuyan Zhang, Jianhua Jiang, Chengying Chen   +4 more
doaj   +1 more source

A Unique March Test Algorithm for the Wide Spread of Realistic Memory Faults in SRAMs [PDF]

, 2006
Among the different types of algorithms proposed to test static random access memories (SRAMs), march tests have proven to be faster, simpler and regularly structured.
Di Natale, Giorgio, Bosio, Alberto, Benso, Alfredo, Prinetto, Paolo Ernesto, Di Carlo, Stefano, A. Benso, P. Prinetto, A. Bosio, G. Di Natale, S. Di Carlo   +9 more
core   +1 more source