Results 31 to 40 of about 17,344,745 (166)

Design of 7T SRAM Using InGaAs-Dual Pocket-Dual Gate-Tunnel FET for IoT Applications

IEEE Access, 2023
The Internet of Things (IoT) is becoming increasingly popular in areas like wearable communication devices, biomedical devices, and home automation systems.
Gadarapulla Rasheed, Sriadibhatla Sridevi   +1 more
doaj   +1 more source

March AB, March AB1: new March tests for unlinked dynamic memory faults [PDF]

, 2005
Among the different types of algorithms proposed to test static random access memories (SRAMs), March tests have proven to be faster, simpler and regularly structured. New memory production technologies introduce new classes of faults usually referred to
Di Natale, Giorgio, Bosio, Alberto, A. Benso, P. Prinetto, A. Bosio, G. Di Natale, Benso, Alfredo, Prinetto, Paolo Ernesto, S. Di Carlo, Di Carlo, Stefano   +9 more
core   +1 more source

NOVEL IN-MEMORY COMPUTING CIRCUIT USING MULLER-C ELEMENT [PDF]

Proceedings on Engineering Sciences
The proposed research work addresses the von Neumann bottleneck, a limitation in computing systems where data transfer between memory and processor components slows down performance.
Gururaj A Tapashetti , Umadevi S
doaj   +1 more source

SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview

Micromachines, 2022
Microprocessors use static random-access memory (SRAM) cells in the cache memory design. As a part of the central computing component, their performance is critical.
Waqas Gul, Maitham Shams, Dhamin Al-Khalili   +2 more
doaj   +1 more source

2D Materials‐Based Static Random‐Access Memory

, 2022
2D transition-metal dichalcogenide semiconductors, such as MoS2 and WSe2, with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)-based field-effect transistor (FET) and static
Yi Wan, Hu, P, Li, L, Chih‐Pin Lin, Lain‐Jong Li, Huang, Z, Chang‐Ju Liu, Zi‐Yuan Huang, Vita Pi‐Ho Hu, Lin, C, Tuo‐Hung Hou, Liu, C, Hou, T, Wan, Y   +13 more
core   +1 more source

Ultra-Low Power High Stability 8T SRAM for Application in Object Tracking System

IEEE Access, 2018
In this paper, an ultra-low power (ULP) 8T static random access memory (SRAM) is proposed. The proposed SRAM shows better results as compared with conventional SRAMs in terms of leakage power, write static noise margin, write-ability, read margin, and ...
Pooran Singh, Santosh Kumar Vishvakarma
doaj   +1 more source

Hi-End: Hierarchical, Endurance-Aware STT-MRAM-Based Register File for Energy-Efficient GPUs

IEEE Access, 2020
Modern Graphics Processing Units (GPUs) require large hardware resources for massive parallel thread executions. In particular, modern GPUs have a large register file composed of Static Random Access Memory (SRAM). Due to the high leakage current of SRAM,
Won Jeon, Jun Hyun Park, Yoonsoo Kim, Gunjae Koo, Won Woo Ro   +4 more
doaj   +1 more source

Memristor-Based Resistive Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design [PDF]

, 2014
The computer memory system has both volatile and non volatile memory. The Volatile memories such as SRAM and DRAM used as a main memory and non volatile memory like flash memory.
V, Thangamani.
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Ultra-Low Power, Process-Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications

Journal of Low Power Electronics and Applications, 2017
In this paper, an ultra-low power (ULP) 10T static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates at sub-threshold voltage. The proposed SRAM has the tendency to operate at low supply voltages with high
Pooran Singh, Santosh Kumar Vishvakarma
doaj   +1 more source