March Test Generation Revealed [PDF]
, 2008 Memory testing commonly faces two issues: the characterization of detailed and realistic fault models and the definition of time-efficient test algorithms.
Di Natale, Giorgio +5 more
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UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]
, 2005 Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Samsudin, K. +9 more
core +1 more source
The impact of random doping effects on CMOS SRAM cell [PDF]
, 2004 The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale MOSFETs.
Cheng, B. +5 more
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Reconfigurable negative bit line collapsed supply write-assist for 9T-ST static random access memory cell [PDF]
, 2023 This paper presents a reconfigurable negative bit line collapsed supply (RNBLCS) write driver circuit for the 9T Schmitt trigger-based static random-access memory (SRAM) cell (9T-ST), significantly improving write performance for real-time memory ...
Chokkakula Ganesh +5 more
core +1 more source
Simulation Analysis and Performance Comparison for the Memory Cells [PDF]
Journal of Electrical and Electronics Engineering, 2021 Leakage power dissipation is an important concern in ultra-deep submicron (ultra-DSM) regime because of the scaling of the technology node. The designing of the efficient memory cell is mandatory for the today’s portable applications.
SHARMA Vijay Kumar
doaj
Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory
Sensors, 2023 This paper comparatively reviews sensing circuit designs for the most widely used embedded memory, static random-access memory (SRAM). Many sensing circuits for SRAM have been proposed to improve power efficiency and speed, because sensing operations in ...
Sangheon Lee +2 more
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Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells [PDF]
, 2005 The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has ...
Samsudin, K. +9 more
core +1 more source
IEEE Access, 2013 In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor
Syed Shakib Sarwar +3 more
doaj +1 more source
Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure
Sensors, 2020 Encryption is an important step for secure data transmission, and a true random number generator (TRNG) is a key building block in many encryption algorithms. Static random-access memory (SRAM) chips can be easily available sources of true random numbers,
Xu Zhang +9 more
doaj +1 more source
Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor [PDF]
, 2018 This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell.
Hashim, Yasir, Yasir Hashim
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