Results 31 to 40 of about 10,587 (214)

Single-Event Upset Analysis and Protection in High Speed Circuits [PDF]

open access: yes, 2006
The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at
Benso, Alfredo   +5 more
core   +1 more source

Dynamic Partial Reconfiguration Project for the Anti-single Event Effect Based on the Soft Error Mitigation

open access: yesNantong Daxue xuebao. Ziran kexue ban, 2020
With the wide application of FPGA(field programmable gate array) based on the SRAM(static randomaccess memory) in the aerospace field, the probability of SEU(single event upset) increases gradually while the FPGAs are exposed in irradiation environment ...
XIE Da;DONG Yiping;WANG Lan;CAO Jinde;GUO Junjie
doaj   +1 more source

Abnormal Signatures Recorded by FORMOSAT-2 and FORMOSAT-3 over South Atlantic Anomaly and Polar Region

open access: yesTerrestrial, Atmospheric and Oceanic Sciences, 2014
Computer systems onboard FORMOSAT-2 (F2) and FORMOSAT-3/COSMIC (F3/C) satellites often register abnormal signatures which are recorded as automatic reconfiguration orders (ARO) in F2, and reboot/reset (RBS) in F3/C.
Tsung-Ping Lee   +7 more
doaj   +1 more source

Low-Power Radiation-Hardened Static Random Access Memory with Enhanced Read Stability for Space Applications

open access: yesApplied Sciences
In space environments, radiation particles affect the stored values of SRAM cells, and these effects, such as single-event upsets (SEUs) and single-event multiple-node upsets (SEMNUs), pose a threat to the reliability of systems used in the space ...
Hong-Geun Park, Sung-Hun Jo
doaj   +1 more source

Evaluation of commercial ADC radiation tolerance for accelerator experiments [PDF]

open access: yes, 2015
Electronic components used in high energy physics experiments are subjected to a radiation background composed of high energy hadrons, mesons and photons. These particles can induce permanent and transient effects that affect the normal device operation.
Chen, Hucheng   +9 more
core   +1 more source

Understanding radiation effects in SRAM-based field programmable gate arrays for implementing instrumentation and control systems of nuclear power plants

open access: yesNuclear Engineering and Technology, 2017
Field programmable gate arrays (FPGAs) are getting more attention in safety-related and safety-critical application development of nuclear power plant instrumentation and control systems.
T.S. Nidhin   +4 more
doaj   +1 more source

A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM [PDF]

open access: yesمجله علوم و فنون هسته‌ای, 2020
This investigation is a computational analysis of a kind of radiation effect on electronic devices, known as the single event upset (SEU) with the Geant4 toolkit.
M. Soleimaninia,, G. Raisali, A. Moslehi
doaj   +1 more source

NI Based System for Seu Testing of Memory Chips for Avionics

open access: yesMATEC Web of Conferences, 2016
This paper presents the results of implementation of National Instrument based system for Single Event Upset testing of memory chips into neutron generator experimental facility, which used for SEU tests for avionics purposes. Basic SEU testing algorithm
Boruzdina Anna   +3 more
doaj   +1 more source

Enhanced Radiation Hardness and Faster Front Ends for the Beetle Readout Chip [PDF]

open access: yes, 2001
This paper summarizes the recent progress in the development of the 128 channel pipelined readout chip Beetle, which is intended for the silicon vertex detector, the inner tracker, the pile-up veto trigger and the RICH detectors of LHCb.
Bauer, C   +14 more
core   +1 more source

Quasi‐digital memristor with self‐rectifying and synaptic functions in crossbar array architectures

open access: yesFlexMat, EarlyView.
The text should be different from the abstract text. A self‐rectifying quasi‐digital memristor (QDM) featuring a well‐defined p‐AgI/n‐PbI2 heterojunction is developed. It monolithically integrate diode‐like rectification, digital switching, and analog plasticity.
Tianyu Liu   +11 more
wiley   +1 more source

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