Results 11 to 20 of about 8,018,858 (254)

Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS

Applied Sciences
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions.
Zhuoxiang Wang, Gang Li, Minghua Tang
doaj   +2 more sources

Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits

Micromachines
The problem that the conventional double-exponential transient current model (DE model) can overdrive the circuit, which leads to the overestimation of the soft error rate of the logic cell, is solved.
Yujian Wang, Hongliang Lu, Caozhen Yang, Yutao Zhang, Ruxue Yao, Rui Dong, Yuming Zhang   +6 more
doaj   +2 more sources

On the Mitigation of Single Event Transient in 3D LUT by In-Cell Layout Resizing [PDF]

, 2020
We propose a workflow for the analysis and mitigation of 3D ICs to Single Event Transient by upsizing the sensitive transistors.
Sarah Azimi, Corrado De Sio, Boyang Du, Luca Sterpone   +3 more
core   +1 more source

Active Radiation-Hardening Strategy in Bulk FinFETs

IEEE Access, 2020
In this article, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that ...
Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gamiz   +3 more
doaj   +1 more source

Current mirror with charge dissipation transistor for analogue single‐event transient mitigation in space application

IET Circuits, Devices and Systems, 2021
Current mirror utilizing an extra transistor for single‐event‐induced charge dissipation is proposed. This technique involves two inverters and a dissipation transistor. The inverters are employed as a sensor that turns on the dissipation transistor when
Jingtian Liu, Bin Liang, Jianjun Chen, Yaqing Chi, Li Yan, Yang Guo   +5 more
doaj   +1 more source

Prediction of Single Event Effects in FinFET Devices Based on Deep Learning

IEEE Journal of the Electron Devices Society, 2023
The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications.
Haiyu Liu, Shulong Wang, Rong Zhao, Hao Ma, Lan Ma, Shijie Liu, Shupeng Chen, Hongxia Liu   +7 more
doaj   +1 more source

Single-Event Upset Analysis and Protection in High Speed Circuits [PDF]

, 2006
The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at
Lofti-Kamran, P., Di Natale, Giorgio, Hosseinabady M., Benso, Alfredo, Lofti Kamran P., Prinetto, Paolo Ernesto, Hosseinabady, M., Di Carlo, Stefano, A. Benso, M. Hosseinabady, P. Lotfi-Kamran, P. Prinetto, G. Di Natale, S. Di Carlo   +13 more
core   +1 more source

Modification of the LM124 Single Event Transients by Load Resistors [PDF]

IEEE Transactions on Nuclear Science, 2010
The influence of a load resistor on the shape of the single event transients was investigated in the LM124 operational amplifier by means of laser tests. These experiments indicated that, as a general rule, load resistors modify the size of the transients.
Franco Peláez, Francisco Javier, López Calle, Isabel, González Izquierdo, Jesús, Agapito Serrano, Juan Andrés   +3 more
openaire   +3 more sources

Single Event Effects in CMOS Image Sensors [PDF]

, 2012
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI ...
Goiffon, Vincent, Lalucaa, Valerian, Rolland, Guy, Petit, Sophie, Magnan, Pierre   +4 more
core   +1 more source

Steady-state visual evoked potentials can be explained by temporal superposition of transient event-related responses [PDF]

, 2011
<p><b>Background:</b> One common criterion for classifying electrophysiological brain responses is based on the distinction between transient (i.e. event-related potentials, ERPs) and steady-state responses (SSRs).
Paula Pazo-Alvarez, Gross, J., Pazo-Alvarez Paula, Darriba, Álvaro, Darriba Alvaro, Darriba, A., Pablo Campo, Gross, Joachim, Pazo-Álvarez, Paula, Capilla, Almudena, Gross Joachim, Campo, P., Campo, Pablo, Capilla, A., Campo Pablo, Valdes-Sosa, P.A., Almudena Capilla, Darriba Domínguez, Álvaro, Capilla González, Almudena, Alvaro Darriba, Capilla Almudena, Joachim Gross, Pazo-Alvarez, P., Campo Martínez-Lage, Pablo, Pazo Álvarez, Paula   +24 more
core   +2 more sources