Results 21 to 30 of about 534 (215)

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

Sensors, 2020
It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time ...
Md Arifur R. Sarker, Seungwoo Jung, Adrian Ildefonso, Ani Khachatrian, Stephen P. Buchner, Dale McMorrow, Pauline Paki, John D. Cressler, Ickhyun Song   +8 more
doaj   +1 more source

Single event sensitivity analysis of bandgap reference

Dianzi Jishu Yingyong, 2018
Based on the conventional design of bandgap reference using 0.18 μm process, the single event transient pulse current model was used to analyze the single event sensitivity of common CMOS two-stage amplifiers. The vertical type PNP transistor used in the
Sui Chenglong, Han Xupeng, Wang Liang, Liu Jiaqi, Li Tongde, Cao Weiyi, Zhao Yuanfu   +6 more
doaj   +1 more source

A Single-Event-Hardened Scheme of Phase-Locked Loop Microsystems for Aerospace Applications

Micromachines, 2022
In order to improve the ability of the phase-locked loop (PLL) microsystem applied in the aerospace environment to suppress the irradiation effect, this study presents an efficient charge pump hardened scheme by using the radiation-hardened-by-design ...
Qi Xiang, Hongxia Liu, Yulun Zhou
doaj   +1 more source

Simulation of heavy ion irradiation effect on 3D MOSFET

AIP Advances, 2023
Single event upset effect is an important factor that causes performance degradation and functional failure of aerospace equipment components in space radiation environment.
Ke Li, Jianhong Hao, Qiang Zhao, Fang Zhang, Zhiwei Dong   +4 more
doaj   +1 more source

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

IEEE Access, 2022
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya, Kalyan Koley, Jitendra Kumar, Pankaj Kumar   +3 more
doaj   +1 more source

Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS

Applied Sciences
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions.
Zhuoxiang Wang, Gang Li, Minghua Tang
doaj   +1 more source

A Methodology for Reconstructing DSET Pulses from Heavy-Ion Broad-Beam Measurements

Quantum Beam Science, 2020
A table-based method for the estimation of heavy-ion-induced Digital Single Event Transient (DSET) voltage pulse-width in a single logic cell has been developed.
Takahiro Makino, Shinobu Onoda, Takeshi Ohshima, Daisuke Kobayashi, Hirokazu Ikeda, Kazuyuki Hirose   +5 more
doaj   +1 more source

Prediction of Single-Event Effects in FDSOI Devices Based on Deep Learning

Micromachines, 2023
Single-event effects (SEE) are an important index of radiation resistance for fully depleted silicon on insulator (FDSOI) devices. The research into traditional FDSOI devices is based on simulation software, which is time consuming, requires a large ...
Rong Zhao, Shulong Wang, Shougang Du, Jinbin Pan, Lan Ma, Shupeng Chen, Hongxia Liu, Yilei Chen   +7 more
doaj   +1 more source

Ultrafast, Single-Event Ptychographic Imaging of Transient Electron Dynamics

Ultrafast Science
Dynamic phenomena occurring on the ultrafast time scales are inherently difficult to image. While pump–probe techniques have been used for decades, probing nonrepeatable phenomena precludes this form of imaging.
Jonathan Barolak, David Goldberger, Bojana Ivanic, David Schmidt, Claudia A. M. Schrama, Charles G. Durfee, Daniel E. Adams   +6 more
doaj   +1 more source

Single Event Transients in CMOS Ring Oscillators [PDF]

Electronics, 2019
In this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and verified experimentally with a Two-Photon Absorption (
Prinzie, Jeffrey, De Smedt, Valentijn
openaire   +1 more source