Results 21 to 30 of about 269,063 (304)

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

open access: yesMicromachines, 2023
In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail.
Yutao Zhang   +5 more
doaj   +1 more source

Single Event Effects in CMOS Image Sensors [PDF]

open access: yes, 2012
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI ...
Goiffon, Vincent   +4 more
core   +1 more source

Steady-state visual evoked potentials can be explained by temporal superposition of transient event-related responses [PDF]

open access: yes, 2011
<p><b>Background:</b> One common criterion for classifying electrophysiological brain responses is based on the distinction between transient (i.e. event-related potentials, ERPs) and steady-state responses (SSRs).
Paula Pazo-Alvarez   +24 more
core   +1 more source

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

open access: yes, 2023
As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely.
Yibo Wang   +4 more
core   +1 more source

Single event transient tolerant frequency divider

open access: yesIET Computers & Digital Techniques, 2014
This study presents a single event upset (SEU) tolerant frequency divider that compares the counted number of rising clock edges with the expected value. The number of counted rising edges being less than expected generally implies that the state is corrupted resulting in faulty output, so the faulty frequency divider is reset to a proper state to ...
Xiaoxuan She, Ningxi Li
openaire   +1 more source

Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications

open access: yesJournal of Low Power Electronics and Applications, 2019
Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation.
Satheesh Kumar S, Kumaravel S
doaj   +1 more source

On the Mitigation of Single Event Transient in 3D LUT by In-Cell Layout Resizing [PDF]

open access: yes, 2020
We propose a workflow for the analysis and mitigation of 3D ICs to Single Event Transient by upsizing the sensitive transistors.
Sarah Azimi   +3 more
core   +1 more source

On the mitigation of single event transients on flash-based FPGAs

open access: yes2018 IEEE 23rd European Test Symposium (ETS), 2018
Thanks to the immunity against Single Event Upsets in configuration memory, Flash-based FPGA is becoming widely adopted in mission- and safety-critical applications, such as in aerospace field. However, the decreasing of device feature size leads to an increasing of the device sensitivity regarding Single Event Transients (SETs).
Sarah Azimi, Boyang Du, Luca Sterpone
openaire   +2 more sources

Synergistic effect of total ionization dose and single event transient in bipolar operational amplifier LM158

open access: yesHe jishu, 2021
BackgroundBipolar devices used in space radiation environment for a long time are simultaneously threatened by the total ionization dose (TID) effect and single event transient (SET), and there is a synergistic effect between TID and SET.
CAI Jiao   +8 more
doaj   +1 more source

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

open access: yesSensors, 2020
It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time ...
Md Arifur R. Sarker   +8 more
doaj   +1 more source

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