Results 1 to 10 of about 117,391 (253)

Study on Single Event Upset and Mitigation Technique in JLTFET-Based 6T SRAM Cell

Journal of Electrical and Computer Engineering
The effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon-based junctionless tunneling field effect transistor (JLTFET) is explored for the first time. JLTFET-based SRAM circuit is designed using the look up table-based Verilog
Aishwarya K, Lakshmi B
doaj   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects

Journal of Low Power Electronics and Applications, 2019
Magnetic tunnel junction (MTJ) with a voltage-controlled magnetic anisotropy (VCMA) effect has been introduced to achieve robust non-volatile writing control with an electric field or a switching voltage. However, continuous technology scaling down makes
Nilson Maciel, Elaine C. Marques, Lirida Naviner, Hao Cai, Jun Yang   +4 more
doaj   +1 more source

Single-event transient analysis on radiation-hardened SiGe and GaN ringfet’s using 3D TCAD simulations

Discover Materials
The ringFET devices are investigated for radiation-hardened applications employing advanced semiconductor materials such as SiGe and GaN by conducting 3D TCAD simulations.
M. Ramya, K. K. Nagarajan, R. Binowesley, A. J. Bhuvaneshwari, P. Kaythry, K. J. Jegadish Kumar, R. Vinu, C. Parthasarathy, S. Gomathi   +8 more
doaj   +1 more source

Investigation of proton single-event transient in CMOS image sensor

AIP Advances
With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention.
Zhigang Peng, Yanjun Fu, Yuan Wei, Yinghong Zuo, Shengli Niu, Jinhui Zhu, Yaxin Guo, Fang Liu, Pei Li, Chaohui He, Yonghong Li   +10 more
doaj   +1 more source

Reliability of LEON3 Processor’s Program Counter Against SEU, MBU, and SET Fault Injection

Cryptography
This paper presents a comprehensive register transfer-level (RTL) fault injection study targeting the program counter (PC) of the LEON3 processor, a SPARC V8-compliant core widely used in safety-critical and radiation-prone embedded applications.
Afef Kchaou, Sehmi Saad, Hatem Garrab, Mohsen Machhout   +3 more
doaj   +1 more source

Analysis of Single Event Transient in SOI GaN-Based FinFET Due to Heavy-Ion Irradiation

IEEE Access
GaN devices offer unrivaled efficiency, high-frequency performance, and superior radiation tolerance over traditional silicon technologies, making them well-suited for space applications.
P. S. Rajakumar, S. Satheesh Kumar
doaj   +1 more source

Analysis of Single-Event Transient in Tunneling-Based Ternary CMOS With Gate-All-Around Structure

IEEE Access
In this study, single-event transient (SET) characteristics in tunneling-based ternary complementary MOS device (T-CMOS) with gate-all-around structure (i.e., nanosheet FET) were analyzed for the first time.
Hyeong-Chan Son, Hyunwoo Kim
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Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET

Yuanzineng kexue jishu
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj   +1 more source

Study on Single Event Transients in Amplifier for Switched-Capacitor Circuits in CMOS Technology

IEEE Access
This article presents a comprehensive analysis of the sensitivity of different switched-capacitor amplifier circuits to Single Event Transients (SETs). SETs are temporary variations in circuit output voltage or current caused by the interaction of heavy ...
Ming Yan, Jaime Cardenas Chavez, Adriana Noguera Cundar, Kamal El-Sankary, Li Chen   +4 more
doaj   +1 more source