Results 31 to 40 of about 117,391 (253)
This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng +10 more
doaj +1 more source
Highly Reliable Quadruple-Node Upset-Tolerant D-Latch
As CMOS technology scaling pushes towards the reduction of the length of transistors, electronic circuits face numerous reliability issues, and in particular nodes of D-latches at nano-scale confront multiple-node upset errors due to their operation in ...
Seyedehsomayeh Hatefinasab +4 more
doaj +1 more source
Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions.
Zhuoxiang Wang, Gang Li, Minghua Tang
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A Static Analysis for the Minimization of Voters in Fault-Tolerant Circuits [PDF]
We present a formal approach to minimize the number of voters in triple-modular redundant (TMR) sequential circuits. Our technique actually works on a single copy of the TMR circuit and considers a large class of fault mo dels of the form “at most 1 ...
Burlyaev, Dmitry +2 more
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ABSTRACT Background Osteosarcoma (OS) and Ewing sarcoma (EWS) are the most common primary bone cancers in children, but acute thrombosis is poorly characterized in this population. Our study evaluated the rates of venous thromboembolism (VTE) and associated risk factors in pediatric patients with bone sarcomas treated over a 10‐year period encompassing
Sarah Kappa +8 more
wiley +1 more source
Optimized Simulation Analysis for Single Event Transient in Nanoscale Logical Cells
Single event transient (SET) induced by high energy single particle radiation is the main threat to space application electronic system reliability.
WANG Tan, DING Lili, LUO Yinhong, ZHAO Wen, ZHANG Fengqi, XU Jingyan
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TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
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ABSTRACT Background An internal tandem duplication in the gene encoding Fms‐like tyrosine kinase 3 (FLT3‐ITD) is associated with high relapse risk and poor prognosis in acute myeloid leukemia (AML) and plays a crucial role in treatment decisions. Measurable residual disease (MRD) analysis of FLT3‐ITD during and after treatment has shown prognostic ...
Sofie Johansson Alm +11 more
wiley +1 more source
The Role of Hematopoietic Cell Transplantation in Ataxia‐Telangiectasia
ABSTRACT Background Ataxia‐telangiectasia (A‐T) is a DNA repair disorder characterized by neurodegeneration, immunodeficiency, and cancer predisposition. Hematopoietic cell transplantation (HCT) is an established therapy in related disorders such as Fanconi anemia (FA) and Nijmegen breakage syndrome (NBS), but its role in A‐T is unclear.
Laila Alkhouli +3 more
wiley +1 more source
This letter presents a wide frequency tuning range (FTR), fault‐tolerant, and common‐mode‐noise (CMN)‐suppressed LC‐VCO using the Reversed‐varactor (RV) technique.
Qiancheng Guo, Yang Guo
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