Results 11 to 20 of about 11,947,015 (317)

Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation

Micromachines
In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon ...
Yuedecai Long, Abuduwayiti Aierken, Xuefei Liu, Mingqiang Liu, Changsong Gao, Gang Wang, Degui Wang, Sandip Majumdar, Yundong Xuan, Mengxin Liu, Jinshun Bi   +10 more
doaj   +3 more sources

Investigation of proton single-event transient in CMOS image sensor

AIP Advances
With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention.
Zhigang Peng, Yanjun Fu, Yuan Wei, Yinghong Zuo, Shengli Niu, Jinhui Zhu, Yaxin Guo, Fang Liu, Pei Li, Chaohui He, Yonghong Li   +10 more
doaj   +3 more sources

Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS

Applied Sciences
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions.
Zhuoxiang Wang, Gang Li, Minghua Tang
doaj   +2 more sources

A Single-Event Transient Radiation Hardened Low-Dropout Regulator for LC Voltage-Controlled Oscillator

Symmetry, 2022
A voltage-controlled oscillator (VCO) is an essential part of the clock circuitry in satellite communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the VCO and inevitably bring in new radiation-sensitive nodes.
Xi Chen, Qian-Cheng Guo, Hengzhou Yuan, Yang Guo   +3 more
semanticscholar   +2 more sources

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

IEEE Access, 2022
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya, Kalyan Koley, Jitendra Kumar, Pankaj Kumar   +3 more
doaj   +2 more sources

The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature

Electronics, 2023
Basing our findings on our previous pulsed laser testing results, we have experimentally demonstrated that there is an inflection point of a single event transient (SET) in the silicon-germanium heterojunction bipolar transistors (SiGe HBTs) with a ...
Xiaoyu Pan, H. Guo, Chao Lu, Hong Zhang, Yi-Nong Liu   +4 more
semanticscholar   +2 more sources

TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature

IEEE Access, 2022
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj   +2 more sources

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +2 more sources

Single Event Effect Analysis of SiGe Low Noise Amplifier

Electronics, 2021
This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT).
Manel Bouhouche, Saida Latreche
doaj   +1 more source

Single-Event Upset Analysis and Protection in High Speed Circuits [PDF]

, 2006
The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at
Lofti-Kamran, P., Di Natale, Giorgio, Hosseinabady M., Benso, Alfredo, Lofti Kamran P., Prinetto, Paolo Ernesto, Hosseinabady, M., Di Carlo, Stefano, A. Benso, M. Hosseinabady, P. Lotfi-Kamran, P. Prinetto, G. Di Natale, S. Di Carlo   +13 more
core   +1 more source