Results 11 to 20 of about 214,395 (302)

Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS

Applied Sciences
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions.
Zhuoxiang Wang, Gang Li, Minghua Tang
doaj   +2 more sources

Single-Event-Transient Resilient Memory for DSP in Space Applications [PDF]

2018 IEEE 23rd International Conference on Digital Signal Processing (DSP), 2018
We present a radiation-hardened-by-design (RHBD) memory design that mitigates Single-Event-Transients (SETs), Single-Event-Upsets (SEUs) and Dual-Event-Upsets (DEUs), hence significantly enhancing the reliability of digital signal processors (DSPs) for space applications.
Lwin, Ne Kyaw Zwa, Sivaramakrishnan, H., Chong, Kwen-Siong, Lin, Tong, Shu, Wei, Chang, Joseph S.   +5 more
openaire   +3 more sources

Investigation of proton single-event transient in CMOS image sensor

AIP Advances
With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention.
Zhigang Peng, Yanjun Fu, Yuan Wei, Yinghong Zuo, Shengli Niu, Jinhui Zhu, Yaxin Guo, Fang Liu, Pei Li, Chaohui He, Yonghong Li   +10 more
doaj   +2 more sources

TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature

IEEE Access, 2022
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a
Tongshan Lu, Chenghua Wang
doaj   +1 more source

Prediction of Single Event Effects in FinFET Devices Based on Deep Learning

IEEE Journal of the Electron Devices Society, 2023
The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications.
Haiyu Liu, Shulong Wang, Rong Zhao, Hao Ma, Lan Ma, Shijie Liu, Shupeng Chen, Hongxia Liu   +7 more
doaj   +1 more source

Active Radiation-Hardening Strategy in Bulk FinFETs

IEEE Access, 2020
In this article, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that ...
Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gamiz   +3 more
doaj   +1 more source

Current mirror with charge dissipation transistor for analogue single‐event transient mitigation in space application

IET Circuits, Devices and Systems, 2021
Current mirror utilizing an extra transistor for single‐event‐induced charge dissipation is proposed. This technique involves two inverters and a dissipation transistor. The inverters are employed as a sensor that turns on the dissipation transistor when
Jingtian Liu, Bin Liang, Jianjun Chen, Yaqing Chi, Li Yan, Yang Guo   +5 more
doaj   +1 more source

Modification of the LM124 Single Event Transients by Load Resistors [PDF]

IEEE Transactions on Nuclear Science, 2010
The influence of a load resistor on the shape of the single event transients was investigated in the LM124 operational amplifier by means of laser tests. These experiments indicated that, as a general rule, load resistors modify the size of the transients.
Franco Peláez, Francisco Javier, López Calle, Isabel, González Izquierdo, Jesús, Agapito Serrano, Juan Andrés   +3 more
openaire   +3 more sources

Single-Event Upset Analysis and Protection in High Speed Circuits [PDF]

, 2006
The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at
Lofti-Kamran, P., Di Natale, Giorgio, Hosseinabady M., Benso, Alfredo, Lofti Kamran P., Prinetto, Paolo Ernesto, Hosseinabady, M., Di Carlo, Stefano   +7 more
core   +1 more source

Single Event Effects in CMOS Image Sensors [PDF]

, 2012
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI ...
Goiffon, Vincent, Lalucaa, Valerian, Rolland, Guy, Petit, Sophie, Magnan, Pierre   +4 more
core   +1 more source