Results 21 to 30 of about 213,131 (262)

Single event sensitivity analysis of bandgap reference

Dianzi Jishu Yingyong, 2018
Based on the conventional design of bandgap reference using 0.18 μm process, the single event transient pulse current model was used to analyze the single event sensitivity of common CMOS two-stage amplifiers. The vertical type PNP transistor used in the
Sui Chenglong, Han Xupeng, Wang Liang, Liu Jiaqi, Li Tongde, Cao Weiyi, Zhao Yuanfu   +6 more
doaj   +1 more source

Single-Event-Transient Resilient Memory for DSP in Space Applications [PDF]

2018 IEEE 23rd International Conference on Digital Signal Processing (DSP), 2018
We present a radiation-hardened-by-design (RHBD) memory design that mitigates Single-Event-Transients (SETs), Single-Event-Upsets (SEUs) and Dual-Event-Upsets (DEUs), hence significantly enhancing the reliability of digital signal processors (DSPs) for space applications.
Lwin, Ne Kyaw Zwa, Sivaramakrishnan, H., Chong, Kwen-Siong, Lin, Tong, Shu, Wei, Chang, Joseph S.   +5 more
openaire   +2 more sources

Characterization of Heavy Ion Induced SET Features in 22-nm FD-SOI Testing Circuits

IEEE Access, 2020
With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created
Chang Cai, Ze He, Tianqi Liu, Gengsheng Chen, Jian Yu, Liewei Xu, Jie Liu   +6 more
doaj   +1 more source

Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS

Applied Sciences
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions.
Zhuoxiang Wang, Gang Li, Minghua Tang
doaj   +1 more source

A Methodology for Reconstructing DSET Pulses from Heavy-Ion Broad-Beam Measurements

Quantum Beam Science, 2020
A table-based method for the estimation of heavy-ion-induced Digital Single Event Transient (DSET) voltage pulse-width in a single logic cell has been developed.
Takahiro Makino, Shinobu Onoda, Takeshi Ohshima, Daisuke Kobayashi, Hirokazu Ikeda, Kazuyuki Hirose   +5 more
doaj   +1 more source

Ultrafast, Single-Event Ptychographic Imaging of Transient Electron Dynamics

Ultrafast Science
Dynamic phenomena occurring on the ultrafast time scales are inherently difficult to image. While pump–probe techniques have been used for decades, probing nonrepeatable phenomena precludes this form of imaging.
Jonathan Barolak, David Goldberger, Bojana Ivanic, David Schmidt, Claudia A. M. Schrama, Charles G. Durfee, Daniel E. Adams   +6 more
doaj   +1 more source

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

IEEE Access, 2022
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya, Kalyan Koley, Jitendra Kumar, Pankaj Kumar   +3 more
doaj   +1 more source

Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature

Sensors, 2018
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola, Ahmad Al Youssef, Samuel Ducret, Franck Perrier, Raphael Buiron, Olivier Gilard, Julien Mekki, Mathieu Boutillier, Guillaume Hubert, Christian Poivrey   +9 more
doaj   +1 more source

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking

IEEE Access, 2019
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive nodes of
Jizuo Zhang, Liang Fang, Jianjun Chen, Shen Hou, Xianyu Tong   +4 more
doaj   +1 more source

Simulation of heavy ion irradiation effect on 3D MOSFET

AIP Advances, 2023
Single event upset effect is an important factor that causes performance degradation and functional failure of aerospace equipment components in space radiation environment.
Ke Li, Jianhong Hao, Qiang Zhao, Fang Zhang, Zhiwei Dong   +4 more
doaj   +1 more source