Results 21 to 30 of about 8,243,533 (301)

Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications

open access: yesJournal of Low Power Electronics and Applications, 2019
Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation.
Satheesh Kumar S, Kumaravel S
doaj   +1 more source

Single event transient tolerant frequency divider

open access: yesIET Computers & Digital Techniques, 2014
This study presents a single event upset (SEU) tolerant frequency divider that compares the counted number of rising clock edges with the expected value. The number of counted rising edges being less than expected generally implies that the state is corrupted resulting in faulty output, so the faulty frequency divider is reset to a proper state to ...
Xiaoxuan She, Ningxi Li
openaire   +2 more sources

On the mitigation of single event transients on flash-based FPGAs

open access: yes2018 IEEE 23rd European Test Symposium (ETS), 2018
Thanks to the immunity against Single Event Upsets in configuration memory, Flash-based FPGA is becoming widely adopted in mission- and safety-critical applications, such as in aerospace field. However, the decreasing of device feature size leads to an increasing of the device sensitivity regarding Single Event Transients (SETs).
Sarah Azimi, Boyang Du, Luca Sterpone
openaire   +3 more sources

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

open access: yesSensors, 2020
This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event ...
Linjie Fan   +3 more
doaj   +1 more source

A Single-Event-Hardened Scheme of Phase-Locked Loop Microsystems for Aerospace Applications

open access: yesMicromachines, 2022
In order to improve the ability of the phase-locked loop (PLL) microsystem applied in the aerospace environment to suppress the irradiation effect, this study presents an efficient charge pump hardened scheme by using the radiation-hardened-by-design ...
Qi Xiang, Hongxia Liu, Yulun Zhou
doaj   +1 more source

Single event sensitivity analysis of bandgap reference

open access: yesDianzi Jishu Yingyong, 2018
Based on the conventional design of bandgap reference using 0.18 μm process, the single event transient pulse current model was used to analyze the single event sensitivity of common CMOS two-stage amplifiers. The vertical type PNP transistor used in the
Sui Chenglong   +6 more
doaj   +1 more source

Characterization of Heavy Ion Induced SET Features in 22-nm FD-SOI Testing Circuits

open access: yesIEEE Access, 2020
With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created
Chang Cai   +6 more
doaj   +1 more source

Single-Event-Transient Resilient Memory for DSP in Space Applications [PDF]

open access: yes2018 IEEE 23rd International Conference on Digital Signal Processing (DSP), 2018
We present a radiation-hardened-by-design (RHBD) memory design that mitigates Single-Event-Transients (SETs), Single-Event-Upsets (SEUs) and Dual-Event-Upsets (DEUs), hence significantly enhancing the reliability of digital signal processors (DSPs) for space applications.
Lwin, Ne Kyaw Zwa   +5 more
openaire   +2 more sources

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

open access: yesSensors, 2020
It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time ...
Md Arifur R. Sarker   +8 more
doaj   +1 more source

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

open access: yes, 2023
As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely.
Yibo Wang   +4 more
core   +1 more source

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