Results 31 to 40 of about 214,395 (302)

SETTOFF : a fault tolerant flip-flop for building cost-efficient reliable systems [PDF]

, 2012
Conventional fault tolerance techniques either require big overheads or have limited reliability. We propose a novel fault tolerant flip-flop (SETTOFF) that addresses timing errors and soft errors in one cost-efficient architecture. In SETTOFF, most SEUs
Zwolinski, Mark, Yang Lin, Lin, Yang, Mark Zwolinski   +3 more
core   +1 more source

Characterization of Heavy Ion Induced SET Features in 22-nm FD-SOI Testing Circuits

IEEE Access, 2020
With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created
Chang Cai, Ze He, Tianqi Liu, Gengsheng Chen, Jian Yu, Liewei Xu, Jie Liu   +6 more
doaj   +1 more source

A Single-Event Transient Radiation Hardened Low-Dropout Regulator for LC Voltage-Controlled Oscillator

, 2022
A voltage-controlled oscillator (VCO) is an essential part of the clock circuitry in satellite communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the VCO and inevitably bring in new radiation-sensitive nodes.
Yang Guo, Xi Chen, Qiancheng Guo, Hengzhou Yuan   +3 more
core   +1 more source

Coordinated cluster and ground-based instrument observation of transient changes in the magnetopause boundary layer during an interval of predominantly northward IMF: Relation to reconnection pulses and FTE signatures [PDF]

, 2001
We study a series of transient entries into the low-latitude boundary layer (LLBL) of all four Cluster spacecraft during an outbound pass through the mid-afternoon magnetopause ([XGSM,YGSM,ZGSM] ≈ [2,7,9]RE).
Eglitis, P., M. A. Hapgood, J. Moen (7594049), Donovan, E. F., Moen, J., Lockwood, M., M. N. Wild (7632371), A. P. van Eyken, Pulkkinen, T. I., Dunlop, M., Bosqued, J. M., K. Kauristie (7591778), Mark Lester (6477935), Donovan, E., F. Pitout, A. P. van Eyken (7594868), Denig, W. F., Rème, H., Alcaydé, D., I. W. McCrea, Hansen, T., A. Stromme (7693499), A. Strømme, M. Lester, A. Balogh, H. Opgenoorth (7613612), S. K. Morley (7012226), T. Hansen (3919604), M. Lockwood (7612331), McCrea, I. W., Watermann, J., Hansen, T. L., M. Taylor (3926213), J. Watermann (7632386), Pulkkinen, T., R. Behlke, Lockwood, Mike, M. Dunlop, W. Denig, Lu, G., R. Behlke (7594133), M. Engebretson (7632383), T. Hansen, Hapgood, M. A., G. Lu, D. Alcayde (7693502), Engebretson, M., R. Stamper (7630469), P. Eglitis, Provan, G., Wild, J. A., Strømme, A., Pitout, F., E. Donovan, M. Lockwood, O. Amm (7591346), M. Taylor, Opgenoorth, H. J., A. Balogh (7591361), F. Pitout (7612724), Stamper, R., M. Dunlop (7596542), Opgenoorth, H., A. Fazakerley (7596551), J. Moen, Behlke, R., R. Stamper, Fazakerley, A. N., J. Watermann, P. L. Blelly (7651616), Cully, C., Dunlop, M. W., M. A. Hapgood (7632368), Morley, S. K., O. Amm, P. Prikryl, Lester, M., Denig, W., G. Lu (4657921), E. Donovan (7591466), D. Alcaydé, Wild, M. N., J. A. Wild, R. Greenwald (7632356), Engebretson, M. J., Watermann, J. F., M. Engebretson, Greenwald, R. A., K. Kauristie, Taylor, M. G. G. T., Frey, H. U., J. M. Bosqued (7645949), H. Frey, Fazakerley, A., H. Rème, R. Greenwald, P. Eglitis (7605143), Balogh, A., J.-M. Bosqued, T. Pulkkinen (7632374), A. Fazakerley, Strömme, A., M. N. Wild, J. A. Wild (7591442), H. Reme (7594538), I. W. McCrea (7594871), Bosqued, J.-M., H. Frey (7632359), Frey, H., M. F. Marcucci, S. K. Morley, P. Prikryl (7632365), G. Provan, H. Opgenoorth, Amm, O., C. Cully, G. Provan (7602020), Kauristie, K., Greenwald, R., Taylor, M., T. Pulkkinen, Marcucci, M. F., van Eyken, A. P., C. Cully (7632353), Prikryl, P., Blelly, P.-L., P.-L. Blelly, M. F. Marcucci (7632389), W. Denig (7632350)   +128 more
core   +1 more source

Pulse-Length Determination Techniques in the Rectangular Single Event Transient Fault Model [PDF]

, 2013
ISBN : 978-1-4799-0102-9International audienceOne of the well-known models to represent Single Event Transient phenomenon at the logic-level is the rectangular pulse model.
Kerkhoff, Hans G., Enrico Costenaro, Dan Alexandrescu, Kerkhoff, H., Rohani, A., Alexandrescu, D., Alireza Rohani, Alexandrescu, Dan, Costenaro, E., Hans G. Kerkhoff, costenaro, enrico   +10 more
core   +1 more source

A Methodology for Reconstructing DSET Pulses from Heavy-Ion Broad-Beam Measurements

Quantum Beam Science, 2020
A table-based method for the estimation of heavy-ion-induced Digital Single Event Transient (DSET) voltage pulse-width in a single logic cell has been developed.
Takahiro Makino, Shinobu Onoda, Takeshi Ohshima, Daisuke Kobayashi, Hirokazu Ikeda, Kazuyuki Hirose   +5 more
doaj   +1 more source

Heavy Ion Single Event Effects in CMOS Image Sensors: SET and SEU

, 2023
High-energy particles in space often induce single event effects in CMOS image sensors, resulting in performance degradation and functional failure. This paper focuses on the formation and morphology of transient bright spots in CMOS image sensors and ...
Zhikang Yang, Jie Feng, Lin Wen, Bingkai Liu, Zitao Zhao, Qi Guo, Yudong Li, Dong Zhou   +7 more
core   +1 more source

Ultrafast, Single-Event Ptychographic Imaging of Transient Electron Dynamics

Ultrafast Science
Dynamic phenomena occurring on the ultrafast time scales are inherently difficult to image. While pump–probe techniques have been used for decades, probing nonrepeatable phenomena precludes this form of imaging.
Jonathan Barolak, David Goldberger, Bojana Ivanic, David Schmidt, Claudia A. M. Schrama, Charles G. Durfee, Daniel E. Adams   +6 more
doaj   +1 more source

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking

IEEE Access, 2019
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive nodes of
Jizuo Zhang, Liang Fang, Jianjun Chen, Shen Hou, Xianyu Tong   +4 more
doaj   +1 more source

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

IEEE Access, 2022
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya, Kalyan Koley, Jitendra Kumar, Pankaj Kumar   +3 more
doaj   +1 more source