Results 21 to 30 of about 12,854,075 (243)
Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations
This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event ...
Linjie Fan +3 more
doaj +1 more source
The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional ...
Tao Liu +7 more
doaj +1 more source
Modeling single-event transients in complex digital systems [PDF]
A methodology to determine the effect of single-event transients (SETs) on complex digital systems has been developed. This methodology is based on the SET-state-transition model. This model breaks the complex digital system down into five states.
Clark, Kenneth A.
core +2 more sources
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola +9 more
doaj +1 more source
A fault-tolerant hardening-by-design frequency divider has been proposed for clock and data recovery in a 28-nm CMOS process. By means of the mandatory updating mechanism, the proposed divider can update the state of the D flip-flops from an error state ...
Hengzhou Yuan +5 more
doaj +1 more source
Integrated circuit susceptibility to radiation-induced faults remains a major reliability concern. The continuous downscaling of device feature size and the reduction in supply voltage in CMOS technology tend to worsen the problem.
Georgios Ioannis Paliaroutis +4 more
doaj +1 more source
Highly Reliable Quadruple-Node Upset-Tolerant D-Latch
As CMOS technology scaling pushes towards the reduction of the length of transistors, electronic circuits face numerous reliability issues, and in particular nodes of D-latches at nano-scale confront multiple-node upset errors due to their operation in ...
Seyedehsomayeh Hatefinasab +4 more
doaj +1 more source
This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng +10 more
doaj +1 more source
A voltage-controlled oscillator (VCO) is an essential part of the clock circuitry in satellite communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the VCO and inevitably bring in new radiation-sensitive nodes.
Yang Guo +3 more
core +1 more source
Single Event Transient Sensitivity Measurement and Worst-Case Test Vector Exploration for ASIC Devices Exposed to Space Single Event Environment [PDF]
Space radiation and nuclear reactors produce single event effects (SEE) in electronic circuits and impact their performance. The SEE phenomena cause circuits and electronic devices to fail by producing faulty results.
Wael, Mohamed
core

