Results 31 to 40 of about 211,225 (152)

A Procedure for Fast Circuit Cross Section Estimation

open access: yesChips
Semiconductor technologies are susceptible to radiation effects. The particle incidence in susceptible areas of an integrated circuit (IC) can generate physical interactions capable of producing errors.
Clayton R. Farias   +2 more
doaj   +1 more source

Bit Upset of 25 nm NAND Flash Memory Induced by Heavy Ion Irradiation

open access: yesYuanzineng kexue jishu, 2023
In order to investigate the influence of heavy ion fluence on single event upsets (SEU) and the SEU cross-section in NAND Flash memory, as well as the multiple-cell upsets (MCU) due to heavy ion irradiation, experimental studies were performed on two ...
SHENG Jiangkun1,2;XU Peng1,*;QIU Mengtong2;DING Lili2;LUO Yinhong2;YAO Zhibin2;ZHANG Fengqi2;GOU Shilong2;WANG Zujun2
doaj   +1 more source

Characteristics and Mechanisms of Single Event Effects Caused by Atmospheric Neutrons in System in Package Device

open access: yesYuanzineng kexue jishu
To investigate the effects of atmospheric neutron radiation effects on a system-in-package (SiP) device, single event upset (SEU) and single event functional interruption (SEFI) were focused on in the experiment.
YE Jiefeng1, 2, LIANG Chaohui2, ZHANG Zhangang2, ZHENG Shunshun1, 2, LEI Zhifeng2, LIU Zhili3, GENG Gaoying3, HAN Hui1
doaj   +1 more source

How much joint resummation do we need?

open access: yesJournal of High Energy Physics, 2019
Large logarithms that arise in cross sections due to the collinear and soft singularities of QCD are traditionally treated using parton showers or analytic resummation.
Gillian Lustermans   +2 more
doaj   +1 more source

Towards a method to anticipate dark matter signals with deep learning at the LHC

open access: yesSciPost Physics, 2022
We study several simplified dark matter (DM) models and their signatures at the LHC using neural networks. We focus on the usual monojet plus missing transverse energy channel, but to train the algorithms we organize the data in 2D histograms instead ...
Ernesto Arganda, Anibal D. Medina, Andres D. Perez, Alejandro Szynkman
doaj   +1 more source

Impacts of storm chronology on the morphological changes of the Formby beach and dune system, UK [PDF]

open access: yesNatural Hazards and Earth System Sciences, 2015
Impacts of storm chronology within a storm cluster on beach/dune erosion are investigated by applying the state-of-the-art numerical model XBeach to the Sefton coast, northwest England.
P. Dissanayake   +2 more
doaj   +1 more source

Measurement of the ratio B(t→Wb)/B(t→Wq) in pp collisions at s=8 TeV

open access: yesPhysics Letters B, 2014
The ratio of the top-quark branching fractions R=B(t→Wb)/B(t→Wq), where the denominator includes the sum over all down-type quarks (q=b,s,d), is measured in the tt¯ dilepton final state with proton–proton collision data at s=8 TeV from an integrated ...
V. Khachatryan   +2 more
doaj   +1 more source

Synergistic Effect of TID and SEE in 130 nm 7T SOI SRAM

open access: yesYuanzineng kexue jishu
The space environment is a very harsh operating environment, and space radiation can directly affect the operation of electronic devices causing total ionizing dose (TID), single event effect (SEE) and displacement damage (DD).
XIAO Shuyan1, GUO Gang1, WANG Linfei2, ZHANG Zheng1, CHEN Qiming1, GAO Linchun2, WANG Chunlin2, ZHANG Fuqiang1, ZHAO Shuyong1, LIU Jiancheng1
doaj   +1 more source

Study of White Neutron Source at CYCIAE-100 for Single Event Effect Irradiation Experiment

open access: yesYuanzineng kexue jishu, 2023
Neutron-induced single event effects have potential influence on the reliability of electronic devices in aircraft and ground-based nuclear facilities. The white neutron source, generated by heavy metal target bombardment from proton accelerators, is an ...
CHEN Qiming;BAO Jie;MA Xu;GUO Gang*;ZHAO Shuyong;ZHANG Zheng;HAN Jinhua;ZHANG Fuqiang;LI Wangtian
doaj   +1 more source

Impact of Temperature and Supply Voltage on Single Event Upset Characterization of Flip-flop in a 22 nm FDSOI Technology

open access: yesYuanzineng kexue jishu
Temperature and supply voltage emerge as critical factors influencing single event upset (SEU) responses in nano-scale fully depleted silicon-on-insulator (FDSOI) technology.
LI Tongde1, 2, ZHU Yongqin1, 2, SUN Yu1, 2, WANG Liang1, 2, ZHAO Yuanfu2, 3,
doaj   +1 more source

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