Results 251 to 260 of about 15,979 (310)
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Radiation hardening of silicon detectors
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999Abstract The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current, evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic ...
F Lemeilleur
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Radiation Hardening in Platinum
physica status solidi (b), 1968AbstractSome measurements of the hardening introduced by fast neutrons in pure platinum are reported. It is found that the change in yield stress of neutron irradiated platinum varies as (Φt)1/2, in agreement with a lattice hardening mechanism. The rate of increase in damage, as observed with field ion microscopy in irradiated platinum, is compared ...
J. M. Galligan, M. J. Attardo
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Radiation hardening in vanadium
Journal of Nuclear Materials, 1970Abstract The effects of neutron irradiation on the tensile properties of 99.9 wt % pure vanadium are investigated in the fluence range 8 × 10 17 to 4 × 10 19 n / cm −2 ( E >1 MeV ). Vanadium is shown to display typical radiation and anneal hardening like other bodycentered cubic (bcc) transition metals.
G.R. Smolik, C.W. Chen
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IEEE Transactions on Nuclear Science, 1970
The requirement for radiation hardened registers has been identified for use with existing digital equipment to assure system survivability in nuclear radiation environments. The major problem has been that all semiconductor registers cannot be guaranteed to maintain their information after ionizing radiation transients above 5×109 rads (Si)/sec.
D. Hampel, K. J. Prost
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The requirement for radiation hardened registers has been identified for use with existing digital equipment to assure system survivability in nuclear radiation environments. The major problem has been that all semiconductor registers cannot be guaranteed to maintain their information after ionizing radiation transients above 5×109 rads (Si)/sec.
D. Hampel, K. J. Prost
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Advanced machine learning analysis of radiation hardening in reduced-activation ferritic/martensitic steels [PDF]
Computational Materials ScienceThis study uses advanced machine learning models to investigate the radiation hardening behaviour of reduced activation ferritic martensitic (RAFM) steels. An extensive dataset spanning nearly four decades (1985 to 2024) and covering various steel series,
Hongbiao Dong
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International Journal of Electronics, 2008
Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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Radiation-hardened phototransistor
IEEE Transactions on Nuclear Science, 1991A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation
W.T. Matzen, R.A. Hawthorne, W.T. Kilian
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Radiation-Hardened Microelectronics
AT&T Technical Journal, 1991Many nuclear power, defense, and space applications require radiation-hardened integrated circuits. In 1986, Sandia's expertise in microelectronics radiation hardening was combined with ATT the new process is running at AT&T's Allentown, Pennsylvania, MOS V production facility, and the technology has been transferred to Sandia's Microelectronics ...
James L. Jorgensen, David S. Yaney
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