Results 261 to 270 of about 15,334 (315)

CNTFET based radiation hardened latch

Australian Journal of Electrical and Electronics Engineering, 2021
In this paper, a carbon nanotube field effect transistor (CNTFET) based single event upset (SEU) tolerant latch is proposed.
Shazia Shakeel, Naushad Alam
openaire   +1 more source

Radiation Hardened by Design

2015
The major work introduced in this book is to develop a megagray-radiation-tolerant ps-resolution time-to-digital converter (TDC) for a light detection and ranging (LIDAR) application. In this chapter, major radiation effects in complementary metal–oxide–semiconductor (CMOS) integrated circuits (ICs) are introduced. The total ionizing dose (TID) effects
Ying Cao, Paul Leroux, Michiel Steyaert
openaire   +1 more source

Transistor sizing for radiation hardening

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004
This paper presents an efficient and accurate numerical analysis technique to simulate single event upsets (SEUs) in logic circuits. Experimental results that show the method is accurate to within 10% of the results obtained using SPICE are provided.
null Quming Zhou, K. Mohanram
openaire   +1 more source

A1Gaas/Gaas Radiation Hardened Photodiodes

SPIE Proceedings, 1984
We report on AlGaAs/GaAs double heterojunction photodiodes designed and fabricated to be resistant to the effects of ionizing-radiation. The work described here includes new results comparing optimized, AlGaAs/GaAs photodiodes grown with two different growth processes: liquid phase epitaxy and molecular beam epitaxy.
J . J. Wiczer, C. E. Barnes, T. A. Fischer, L. R. Dawson, T. E. Zipperian   +4 more
openaire   +1 more source

Radiation Hardened Bandgap References

2015
As a key component in the proposed multistage noise-shaping (MASH) \(\Delta\Sigma\) time-to-digital converter (TDC) system, the total ionizing dose (TID) radiation tolerance of the bandgap reference in deep-submicron -complementary metal–oxide–semiconductor (CMOS) technology is generally limited by the radiation-introduced leakage current in diodes. An
Ying Cao, Paul Leroux, Michiel Steyaert
openaire   +1 more source

Radiation‐Hardened Optoelectronic Components

Aircraft Engineering and Aerospace Technology, 1992
HONEYWELL has developed the world's first range of radiation‐hardened LEDs and photodiodes which operate effectively during and after radiation exposure. The components have many applications for position and object sensing in missiles, aircraft, spacecraft, nuclear installations and hard military environments, where standard components have been ...
openaire   +1 more source

Radiation Hardening Applications

1972
Two approaches to the fabrication of radiation-hard dielectrics, utilizing silicon nitride, have been studied; silicon nitride sandwich structure and silicon oxynitride. Radiation-resistant devices investigated to date have included capacitors (MNS and MNOS), MNOS-FETs, bipolar transistors and operational amplifiers.
openaire   +1 more source

Radiation anneal hardening in molybdenum

Physica Status Solidi (a), 1974
Yield stress measurements have been performed on irradiated and annealed-irradiated high purity (5 wt ppm interstitials) and intermediate purity (27 wt ppm interstitials) molybdenum single crystals of (100), (110), and (491) orientations. Radiation anneal hardening which is the additional increment in yield stress over that observed in irradiated ...
D. F. Hasson, K. J. Arsenault
openaire   +1 more source

Optical Disk Radiation Hardening Considerations

SPIE Proceedings, 1988
Optical Disk Memories are assessed in space radiation environments. Total dose and dose rate testing of media including Write Only Read Many (WORM) and Magneto-Optic Erasable technologies is performed and found to be hard to over 1 Mrad(Si). Optics, Optoelectrics and other critical technologies are addressed and hardening considerations presented for ...
J. P. Retzler, P. A. Zielle, P. T. Susan, K. B. Edwards   +3 more
openaire   +1 more source

Nonvolatile radiation hardened DICE latch

2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015
Spintronic-based integrated circuits have been widely considered as potential candidates for space application, due to the fact that their core devices (e.g. magnetic tunnel junction, MTJ) are intrinsic insensitive to radiation effects. However, their CMOS peripheral circuits are still vulnerable to radiation effects.
Tingting Pang, Wang Kang, Yi Ran, Youguang Zhang, Weifeng Lv, Weisheng Zhao   +5 more
openaire   +1 more source