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Radiation damage studies of new intrinsically radiation-hard scintillators

2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD), 2016
Following the development of intrinsically radiation-hard scintillators, we exposed various scintillators tiles to gammas from a 137Cs source at the University of Iowa Hospitals and Clinics up to 1.4 and 14 Mrad. The results are within expectations and exhibit sufficiently high performance for implementations in the future/upgrade hadron/lepton ...
Bilki, Burak   +4 more
openaire   +2 more sources

Radiation Hard Frequency Synthesizers

2018
The discussions from the radiation experiments lead to a conclusion that the varactor of a conventional LC-oscillator is prone to Single-Event Effects due to the large collection area. These effects caused frequency steps since this charge moves to the loop filter of the PLL.
Jeffrey Prinzie   +2 more
openaire   +1 more source

Design of Radiation-hard MZM Drivers

20th Italian National Conference on Photonic Technologies (Fotonica 2018), 2018
Radiations in harsh environments can significantly affects the performance of the silicon devices. Therefore, these effects should be taken into account in the system design phase. In this paper is shown the design of two high-speed drivers for optical Mach Zehnder modulators (MZM).
Ciarpi G.   +3 more
openaire   +1 more source

Radiation hardness characteristics of Si-PIN radiation detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015
Abstract The Korea Atomic Energy Research Institute (KAERI) has fabricated Si-PIN radiation detectors with low leakage current, high resistivity (>11 kΩ cm) and low capacitance for high-energy physics and X-ray spectroscopy. Floating-zone (FZ) 6-in.
Manhee Jeong   +3 more
openaire   +1 more source

A Natural Limit to the Spectral Hardness of Worst Case Electron Radiation in the Terrestrial Van Allen Belt

Journal of Geophysical Research: Space Physics, 2022
The flux of relativistic electrons in the terrestrial Van Allen radiation belt can vary by orders of magnitude during a geomagnetic storm. The response is typically assumed to be controlled by an often delicate balance between acceleration and loss ...
L. Olifer   +5 more
semanticscholar   +1 more source

Radiation hard diamond pixel detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2008
Abstract Even though the LHC has not yet begun, already a high luminosity upgrade of the LHC is being planned. The sensors at radii of about 3 cm will have to withstand an expected fluence exceeding 10 16  particles/cm 2 in 5 years. At this fluence current silicon sensors cease to function.
J.J. Velthuis   +7 more
openaire   +2 more sources

Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

, 2020
The effects of radiation on tungsten doped indium oxide (IWO) thin-film transistors (TFTs) have been well investigated in this Letter. In order to achieve high stability and excellent electrical performance simultaneously even in high ionizing radiation ...
D. Ruan   +5 more
semanticscholar   +1 more source

Efficient minority carrier detrapping mediating the radiation hardness of triple-cation perovskite solar cells under proton irradiation

Energy & Environmental Science, 2019
Although highly energetic proton irradiation forms localized trap states in triple cation perovskites, solar cells possess exceptional radiation hardness.
F. Lang   +8 more
semanticscholar   +1 more source

Increased radiation hardness of CdZnTe by laser radiation

IEEE Nuclear Science Symposuim & Medical Imaging Conference, 2010
The aim of this work is to study the possibility to increase the radiation hardness of Cd 0.9 Zn 0.1 Te crystal using laser radiation. Pulsed Nd:YAG laser for this aim was used. Estimation of the crystalline lattice defects before and after irradiation by γ-ray using photoluminescence method in the experiments was applied.
A Medvid   +5 more
openaire   +1 more source

Radiation-hard static induction transistor

IEEE Transactions on Nuclear Science, 1988
The design, fabrication, and characteristics of a 350-V, 100-A buried-gate static induction transistor (SIT) as a power switching device for applications in military and space environments because of its potential for radiation hardness, high-frequency operation, and the incorporation of on-chip smart power sensor and logic functions are described. The
M.H. Hanes   +4 more
openaire   +1 more source

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