Results 271 to 280 of about 25,276 (306)

Radiation hardness of porous silicon

Semiconductors, 1997
The effect of irradiation by 300-keV Ar+ ions on the properties of electrochemically produced porous silicon is studied at doses of 5×1014–1×1016 cm−2. Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is substantially greater than that of single crystal silicon.
V. V. Ushakov, V. A. Dravin, N. N. Mel’nik, V. A. Karavanskii, E. A. Konstantinova, V. Yu. Timoshenko   +5 more
openaire   +1 more source

Hard QED radiation at HERA

Journal of Physics G: Nuclear and Particle Physics, 1993
The deep-inelastic electron-proton collisions at HERA are frequently associated with emission of hard photons. A large fraction of these events can be identified either by the direct detection of radiative photons or, indirectly, by a mismatch between the event kinematics determined from the scattered electron energy and its angle and that determined ...
openaire   +1 more source

Radiation hard electronics for LHC

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
Abstract A CMOS front end electronics chain is being developed by the RD20 collaboration for microstrip detector readout at LHC. It is based on a preamplifier and CR-RC filter, analogue pipeline and an analogue signal processor. Amplifiers and transistor test structures have been constructed and evaluated in detail using a Harris 1.2 μm radiation ...
M. Raymond, M. Millmore, G. Hall, R. Sachdeva, M. French, E. Nygård, K. Yoshioka   +6 more
openaire   +1 more source

Effects of burn-in on radiation hardness

IEEE Transactions on Nuclear Science, 1994
Transistors and ICs were irradiated with or without pre-irradiation elevated-temperature biased stresses (i.e., burn-in). These stresses lead to larger radiation-induced transistor threshold-voltage shifts and increases in IC static power supply leakage current (two orders of magnitude) in stressed ICs than for ICs not subjected to a stress.
M.R. Shaneyfelt, D.M. Fleetwood, J.R. Schwank, T.L. Meisenheimer, P.S. Winokur   +4 more
openaire   +1 more source

Development of radiation hard radiation detectors

2003
The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made of silicon are cost effective and have excellent position resolution. Therefore, they are widely used for track finding and particle analysis in large high-energy physics experiments.
openaire   +1 more source

Device Stability and Radiation Hardness

2007
Reliable operation of semiconductor detectors requires insensitivity to environmental conditions such as humidity, temperature and working in atmospheric or vacuum conditions. The radiation to be measured may change the detector material and thus also the properties of the detector.
openaire   +1 more source

Radiation Hard Frequency Synthesizers

2018
The discussions from the radiation experiments lead to a conclusion that the varactor of a conventional LC-oscillator is prone to Single-Event Effects due to the large collection area. These effects caused frequency steps since this charge moves to the loop filter of the PLL.
Jeffrey Prinzie, Michiel Steyaert, Paul Leroux   +2 more
openaire   +1 more source

Radiation Hardness Of LSO:CE

1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference, 2005
M. Kobayashi, M. Ishii, C.L. Melcher
openaire   +1 more source

Effects of Al2O3 surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications

Applied Surface Science, 2022
Seong-Hyun Hwang, , Ick-Joon Park
exaly  

Hard battles on radiation safety

Nature, 1987
openaire   +2 more sources