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Radiation Hardness of Silicon Carbide
Materials Science Forum, 2003 The aim of this study was an estimation of the radiation hardness of silicon carbide and devices on its base. By using data, obtained by the authors, and literature data, it was possible to calculate carrier removal rate in SiC, irradiated by different charge participles, radiation defects (RD) introduction rate and generation constant of deeper RD ...
Alexander A. Lebedev +6 more
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Radiation hardness study on fused silica
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2008 Radiation hardness tests have been carried out on fused silica samples of the highest optical grade from three different manufacturers (Suprasil, Lithosil and Corning). The samples were irradiated with protons in order to emulate the expected accumulated
M Hoek, D Branford, Euan N Cowie
exaly +2 more sources
Radiation Hardness and Self‐Healing of Perovskite Solar Cells
Advanced Materials, 2016 The radiation hardness of CH3 NH3 PbI3 -based solar cells is evaluated from in situ measurements during high-energy proton irradiation. These organic-inorganic perovskites exhibit radiation hardness and withstand proton doses that exceed the damage ...
Felix Lang, N H Nickel, Andrea Denker
exaly +3 more sources
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Radiation hardness of gallium nitride
IEEE Transactions on Nuclear Science, 2002Gallium nitride (GaN) light emitting diodes (LEDs) were irradiated at room temperature with electrons in the range 300-1400 keV. A threshold energy of 440 keV was observed, corresponding to a gallium atom displacement energy of 19/spl plusmn/2 eV. This value of the displacement energy compares with that of silicon carbide but is smaller than that of ...
Ionascut-Nedelcescu, A. +5 more
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Radiation hardness of CsBr:Eu2+
Journal of Luminescence, 2005In this study,results on the radiation damage of the storage phosphor CsBr:Eu2+ are presented. It is shown that a high X-ray dose causes a significant deterioration of the photostimulated luminescence accompanied by a degradation of the UV-excited Eu2+ fluorescence. Since no related dose-dependent increase of Eu3+ luminescence is observed, the decrease
J. Zimmermann +4 more
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Radiation hardness of ZnO at low temperatures
Semiconductor Science and Technology, 2004In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130 K, the lowest temperature presently attainable under 1 MeV, 0.3 µA cm−2 irradiation.
CoÅŸkun, Cevdet +3 more
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Design of Radiation-hard MZM Drivers
20th Italian National Conference on Photonic Technologies (Fotonica 2018), 2018Radiations in harsh environments can significantly affects the performance of the silicon devices. Therefore, these effects should be taken into account in the system design phase. In this paper is shown the design of two high-speed drivers for optical Mach Zehnder modulators (MZM).
Ciarpi G. +3 more
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Characterization of Radiation Hard Silicon Materials
Materials Science Forum, 2009Segmented silicon detectors are widely used in modern high-energy physics (HEP) experiments due to their excellent spatial resolution and well-established manufacturing technology. However, in such experiments the detectors are exposed to high fluences of particle radiation, which causes irreversible crystallographic defects in the silicon material ...
Luukka, Panja +7 more
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