Results 291 to 300 of about 2,199,437 (323)

A radiation hard septum magnet

IEEE Transactions on Magnetics, 1981
A septum magnet, used to separate a pion beam from a high intensity proton beam, has been designed, built and tested at TRIUMF. Because the proton beam intensities car exceed 100 μA, and it is anticipated that ∼ 1% of the beam will be spilt on the septum magnet, all components of the magnet have to be radiation hard (i.e., inorganic).
T. Gathright, P. Reeve
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Radiation Hardness of Silicon Carbide

Materials Science Forum, 2003
The aim of this study was an estimation of the radiation hardness of silicon carbide and devices on its base. By using data, obtained by the authors, and literature data, it was possible to calculate carrier removal rate in SiC, irradiated by different charge participles, radiation defects (RD) introduction rate and generation constant of deeper RD ...
Alexander A. Lebedev, Vitalii V. Kozlovski, Nikita B. Strokan, D.V. Davydov, Alexander M. Ivanov, Anatoly M. Strel'chuk, Rositza Yakimova   +6 more
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Radiation hard cryogenic silicon detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002
It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, "resuscitate" when operated at temperatures below 130 K. This is often referred to as the "Lazarus effect". The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation ...
L. Casagrande, M. C. Abreu, W. H. Bell, P. Berglund, W. de Boer, BORCHI, EMILIO, K. Borer, BRUZZI, MARA, S. Buontempo, S. Chapuy, V. Cindro, P. Collins, N. D'Ambrosio, C. Da Viá, S. Devine, B. Dezillie, Z. Dimcovski, V. Eremin, A. Esposito, V. Granata, E. Grigoriev, F. Hauler, E. Heijne, S. Heising, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenço, M. Mikuz, T. O. Niinikoski, V. O'Shea, S. Pagano, V. G. Palmieuri, S. Paul, S. Pirollo, K. Pretzl, P. Rato, G. Ruggiero, K. Smith, P. Sonderegger, P. Sousa, E. Verbitskaya, S. Watts, M. Zavrtanik   +44 more
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Radiation hardness of porous silicon

Semiconductors, 1997
The effect of irradiation by 300-keV Ar+ ions on the properties of electrochemically produced porous silicon is studied at doses of 5×1014–1×1016 cm−2. Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is substantially greater than that of single crystal silicon.
V. V. Ushakov, V. A. Dravin, N. N. Mel’nik, V. A. Karavanskii, E. A. Konstantinova, V. Yu. Timoshenko   +5 more
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Extraordinary Radiation Hardness of Atomically Thin MoS2.

ACS Applied Materials and Interfaces, 2019
We demonstrate that atomically thin layered two-dimensional (2D) semiconductors are promising candidates for space electronics owing to their inherent and extraordinary resilience to radiation damage from energetic heavy charged particles. In particular,
Andrew J Arnold, T. Shi, I. Jovanovic, Saptarshi Das   +3 more
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Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures

2019 IEEE 31st International Conference on Microelectronics (MIEL), 2019
The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented.
D. Ukolov, N. A. Chirkov, R. Mozhaev, A. Pechenkin   +3 more
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Radiation hard 1.0μm CMOS technology

IEEE Transactions on Nuclear Science, 1987
This paper describes radiation test results of a radiation hard CMOS technology with 1.0 μm minimum geometry features. The radiation goals of this technology are to ensure the MOS devices are functional after 10 Mrad total dose irradiation, are single event upset hardened to less than 1E-10 errors per bit-day, are transient upset immune to 1E9 rads/sec
K. H. Lee, John C. Desko, Ross A. Kohler, Cris W. Lawrence, William J. Nagy, Julie A. Shimer, Steven D. Steenwyk, Richard E. Anderson, Julia S. Fu   +8 more
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Radiation hardness of polycrystalline diamond

Diamond and Related Materials, 1997
Abstract Undoped and B-doped polycrystalline diamond films have been irradiated with 2-MeV alpha particles and 3-MeV protons at doses ranging from D =10 12 to D =10 17 cm −2 . The radiation damage has been studied using conductivity measurements and Raman/photoluminescence spectroscopy. For undoped diamond films, the H3 luminescent center (NVN)
P. Gonon, S. Prawer, D.N. Jamieson, K.W. Nugent   +3 more
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BGO crystals — radiation hard scintillators

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
Abstract A new version of the Bridgman technique of Bi 4 Ge 3 O 12 (BGO) crystal growth was developed. The first radiation hardness measurement of new BGO grown by this technique shows excellent characteristics. The optical transmission at a peak emission 0.48 μm of these crystals degraded by no more than 10% when irradiated by photons from 60 Co ...
V.V. Yanovsky, V.A. Chizhov, V.M. Skorikov   +2 more
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Hard QED radiation at HERA

Journal of Physics G: Nuclear and Particle Physics, 1993
The deep-inelastic electron-proton collisions at HERA are frequently associated with emission of hard photons. A large fraction of these events can be identified either by the direct detection of radiative photons or, indirectly, by a mismatch between the event kinematics determined from the scattered electron energy and its angle and that determined ...
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