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Random Telegraph Noise in Carbon Nanotube Peapod Transistors
Fullerenes, Nanotubes and Carbon Nanostructures, 2005Abstract We investigated the switching of resistance between two discrete values, known as random telegraph noise (RTN), observed in carbon nanotube peapod transistors [single‐walled carbon nanotubes (SWNTs), C60‐peapods, and Cs‐encapsulated SWNTs (so‐called Cs‐peapods)]. By analyzing the features of the RTN, we suggest that this noise for SWNTs is due
Jhang, S. +10 more
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Defect-Based Compact Modeling of Random Telegraph Noise
2020This chapter handles compact modeling of RTN and BTI with the main focus on the statistical component of reliability. A comprehensive overview of the State-of-the-Art(SotA) BTI distribution models will be given. Of these, the Exponential-Poisson distribution, describing BTI from the defect-centric point of view, is considered as the SotA.
Weckx, Pieter +4 more
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Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory
2015 45th European Solid State Device Research Conference (ESSDERC), 2015In this paper we explore the features of complex anomalous Random Telegraph Noise (aRTN) in TiN/Ti/HfO 2 /TiN Resistive Random Access Memory (RRAM) devices. Careful systematic experiment, dedicated characterization techniques, and physics-based simulations are exploited to gain insights into the physics of this phenomenon. The RTN parameters (amplitude
PUGLISI, Francesco Maria +3 more
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Spectrum of anomalous random telegraph noise
Journal of Applied Physics, 1993The alternate capture and emission of electrons at an individual defect site generates discrete switching in resistance, referred to as a random telegraph signal (RTS). Recent experiments indicate that some defects might have two mutually exclusive emission modes with distinct emission rates, which result in the anomalous RTS: a rapid-switching RTS ...
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Random telegraph noise analysis in time domain
Review of Scientific Instruments, 2000A new procedure for analysis of random telegraph signals in time domain has been developed and applied to the analysis of voltage fluctuations in the current induced dissipative state in superconducting thin films. The procedure, based entirely on the difference in the statistical properties of discrete Marcovian telegraph fluctuations and Gaussian ...
Y. Yuzhelevski, M. Yuzhelevski, G. Jung
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Neural network based analysis of random telegraph noise in resistive random access memories
Semiconductor Science and Technology, 2020The characterization of random telegraph noise (RTN) signals in resistive random access memories (RRAM) is a challenge. The inherent stochastic operation of these devices, much different to what is seen in other electron devices such as MOSFETs, diodes ...
G. González-Cordero +5 more
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Random telegraphic noise in double barrier systems
Applied Physics Letters, 1993A random telegraphic noise (RTN) in a resonant tunneling device (RTD) has been found through a self-consistent particle Monte Carlo (MC) simulation with model quantum dynamics. The onset of RTN coincides with the onset of tunneling conduction, and with the onset of the low-current valley region of the current-voltage (I-V) characteristic.
R. E. Salvino, F. A. Buot
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Random Telegraph Noise Under Switching Operation
2020This chapter deals with random telegraph noise (RTN) under switching operation. We measured and modeled RTN by using ring oscillator-based (RO-based) test chips. They were fabricated in three different processes of 65 nm bulk, 65 nm FDSOI, and 40 nm bulk.
Kazutoshi Kobayashi +3 more
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On noise and random telegraph noise in very small electronic devices
Physica B: Condensed Matter, 1990Abstract We demonstrate that random telegraph signal (RTS) noise can only be observed in small electronic devices where the number of free charge carriers is smaller than 1 {α ln(ƒ m τ s } . Here α is the Hooge 1 ƒ noise parameter, ƒ m the bandwidth of the measuring system and τs the sum of the mean capture and ...
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Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2013With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependence (i.e., non-stationarity), bi-directional coupling, and high inter-device variability of RTN present significant challenges to understanding its circuit-level effects.
Aadithya V. Karthik +3 more
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