Results 271 to 280 of about 125,218 (322)
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Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays
IEEE Electron Device Letters, 2022In this letter, we present clear experimental evidence proving that a high-temperature idle/data-retention phase gives rise to a permanent intensification of random telegraph noise (RTN) in 3-D NAND Flash arrays.
G. Malavena +4 more
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On the amplitude of random telegraph noise
Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012A simple physical model is developed to show that the “hole-in-the-inversion-layer” model for RTN is in fact correct. This simple model allows RTN amplitude for future devices to be predicted intuitively and quantitatively. The model provides additional incite into the physics of RTN in MOSFETs.
K. P. Cheung +3 more
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The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena
IEEE International Reliability Physics Symposium, 2022The current understanding of key reliability phenomena such as leakage and Random Telegraph Noise (RTN) is still incomplete. Models exist that explain simple cases (2-level RTN), yet experimental reports showed the occurrence of complex cases (e.g ...
Sara Vecchi, P. Pavan, F. Puglisi
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IEEE Transactions on Electron Devices, 2022
Random telegraph noise (RTN) is one of the most challenging defect-related reliability concerns in emerging HfO2-based devices due to the higher bulk defect density compared to SiO2.
Sara Vecchi, P. Pavan, F. Puglisi
semanticscholar +1 more source
Random telegraph noise (RTN) is one of the most challenging defect-related reliability concerns in emerging HfO2-based devices due to the higher bulk defect density compared to SiO2.
Sara Vecchi, P. Pavan, F. Puglisi
semanticscholar +1 more source
Understanding random telegraph noise in two-dimensional BP/ReS2 heterointerface
Applied Physics Letters, 2022Black phosphorus (BP)-based broken gap heterojunctions have attracted significant attention mainly owing to its wide thickness-dependent Fermi level, offering opportunities to demonstrate various carrier transport characteristics and high performing ...
Byung Chul Lee +5 more
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IEEE Electron Device Letters, 2022
A novel encrypted Computing-in-Memory (eCIM) architecture is proposed based on 55nm NOR Flash memory technology, wherein the current fluctuations caused by random telegraph noise (RTN) in flash cells are utilized as the intrinsic encryption source ...
Yang Feng +7 more
semanticscholar +1 more source
A novel encrypted Computing-in-Memory (eCIM) architecture is proposed based on 55nm NOR Flash memory technology, wherein the current fluctuations caused by random telegraph noise (RTN) in flash cells are utilized as the intrinsic encryption source ...
Yang Feng +7 more
semanticscholar +1 more source
Time-Dependent Random Threshold Voltage Variation Due to Random Telegraph Noise
IEEE Transactions on Electron Devices, 2021With the downscaling of device dimensions, the variability of metal–oxide–semiconductor field-effect transistor (MOSFET) electrical behavior is produced by factors other than variations in physical dimensions and doping profiles, which are there since ...
G. Wirth
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Random telegraph noise in a nickel nanoconstriction
Journal of Applied Physics, 2003Nickel nanoconstrictions about 20 nm wide produced by electron beam lithography in a 60 nm nickel film exhibit resistivities in the kΩ range with a nonlinear and asymmetric I–V characteristic. Noise spectra of the contacts sometimes deviate from 1/f behavior due to random telegraph fluctuations at room temperature with a frequency in the 10 Hz range ...
O. Céspedes +4 more
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RANDOM TELEGRAPH NOISE IN MICROSTRUCTURES
Noise in Physical Systems and 1/F Fluctuations, 1998The theory of random current switchings in conductors with S -type current-voltage characteristic is presented. In the range of bistability, the mean time spent by the system in the low-current state before a transition to the high-current state occurs, {bar {tau}}{sub l} , decreases with voltage, and that for the high-current state, {bar {tau}}{sub h}
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Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators
IEEE transactions on device and materials reliabilityThe development of a robust and secure hardware for the Internet of Things (IoT) and edge computing requires improvements in the existing low-power and low-cost hardware security primitives.
T. Zanotti +6 more
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